Unlock instant, AI-driven research and patent intelligence for your innovation.

Low-charge-injection charge pump and low charge injection method

A technology of injecting charge and low charge, applied in the direction of conversion equipment without intermediate conversion to AC, can solve the problems of PLL performance degradation, output voltage ripple, interference, etc.

Inactive Publication Date: 2013-03-06
ARKMICRO TECH +1
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This phenomenon is called channel charge injection (Channel Charge Injection), which will cause unnecessary fluctuations in the VC voltage. The VC voltage controls the voltage-controlled oscillator, and its voltage fluctuations are converted into phase jitter (Jitter) of the VCO output clock signal, resulting in PLL performance degradation
[0005] On the other hand, if figure 2 In the circuit shown, the switches Sp and Sn are close to the output terminal VC, so due to the feed-through effect, that is, the switching signal of the switch on and off is coupled to the output terminal VC through the parasitic capacitance, which will interfere with the output terminal, causing the output voltage Ripple

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-charge-injection charge pump and low charge injection method
  • Low-charge-injection charge pump and low charge injection method
  • Low-charge-injection charge pump and low charge injection method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Such as Figure 5 Shown is the invention image 3 A specific implementation circuit diagram of the system structure shown, the switch function is realized by P-type metal oxide semiconductor transistor (PMOS) and N-type metal oxide semiconductor transistor (NMOS), the circuit includes PMOS transistors Mp1, Mp2, Mp3, Mp4, NMOS tubes Mn1, Mn2, Mn3, Mn4, two transmission gates TG1 and TG2, four inverters INV1, INV2, INV3, INV4, and power supply VDD and ground terminal GND, wherein the source of Mp1 tube is connected to the power supply (VDD ), the drain of the Mp1 tube is connected to the source of the Mp2 tube and simultaneously connected to the source of the Mp3 tube, the drain of the Mp3 tube is connected to the source of the Mp4 tube, and the drain of the Mp4 tube is grounded to GND. The UP signal is connected to the grid of Mp1 tube after passing through a transmission gate TG1, and at the same time, the UP signal is connected to the grid of Mp3 tube after passing th...

Embodiment 2

[0047] Such as Figure 6 Shown is another specific implementation circuit diagram of the low charge injection charge pump in the specific embodiment of the present invention; Figure 5 The difference in the specific implementation circuit shown in the diagram is that the difference between the PMOS transistor and the NMOS transistor is used to remove the two sets of inverters, and at the same time remove the transmission gate intended to ensure signal consistency. Therefore, the circuit includes 4 PMOS transistors Mp1, Mp2, Mp5, Mp6, 4 NMOS transistors Mn1, Mn2, Mn5, Mn6, and two inverters INV2 and INV4, where Mp1, Mp2, Mn1, Mn2 connection with Figure 5 The circuit shown is the same, the gate of the Mp1 tube is directly connected to the UP signal, the gates of the Mp2 tube and the Mn2 tube are connected to the Figure 5 The circuit shown is the same, connect VBP and VBN respectively, Mn5 tube and Mn6 tube are connected in series, the gate of Mn5 tube is directly connected t...

Embodiment 3

[0052] Such as Figure 7 Shown is another specific implementation circuit diagram of the low charge injection charge pump in the specific embodiment of the present invention; Figure 6The only difference in the circuit shown is that the UP signal is connected to the gate of the Mn6 tube after passing through the series inverters INV5, INV6, and INV2, and the DN signal is connected to the gate of the Mp6 tube after passing through the series inverters INV7, INV8, and INV4. For the gate, the purpose of using an inverter string instead of the inverter is to obtain a larger adjustment range of Δt, that is, to obtain a larger adjustment range of channel charge discharge time.

[0053] It should be noted that the number of inverter strings in the circuit shown in this embodiment is not limited to Figure 7 The three inverters in the circuit shown can also be implemented by using n inverters, so as to obtain a larger Δt adjustment range, where n is the base number.

[0054] Additio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses a low-charge-injection charge pump. The charge pump is characterized in that a current source Ip and a current drain In are directly connected to the both sides of an output node VC of the charge pump; the other end of the current source Ip is connected to a power supply through a switch Sp; the other end of the current drain In is connected to the ground through a switch Sn; a connecting point p1 of the current source Ip and the switch Sp is connected to the ground through series-connected switches Sp1 and Sp2; and a connecting point p2 of the current drain In and the switch Sn is connected to the power supply through series-connected switches Sn1 and Sn2. The invention also provides a low charge injection method on the basis of a circuit. The circuit and the low charge injection method can be used for releasing charges in a switch channel by providing a temporary path at a switch-off moment, thereby enhancing the switch-off speed of the current source Ip (or the current drain In) and reducing the influence of charge injection on the output of the charge pump.

Description

technical field [0001] The invention relates to the field of analog charge pump circuits, in particular to a low-charge injection charge pump circuit applied in high-speed low-noise communication circuits such as phase-locked loops. Background technique [0002] As a basic circuit unit, a charge pump is widely used in system circuits such as phase-locked loops. Typically, a phase-locked loop (PLL) circuit includes a phase-frequency detector (PFD), a charge pump (CP) and loop filter (LPF) and a voltage-controlled oscillator (VCO), such as figure 1 shown. The phase detector detects the input reference clock signal (CK ref ) and the VCO output clock signal (CK out ) to generate the charge (UP) and discharge (DN) signals. The charge pump charges and discharges the loop filter according to the output result of the phase detector, and the voltage-controlled oscillator changes the frequency of the output clock as the voltage (VC) on the loop filter changes. The entire circuit ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02M3/07
Inventor 方尚侠周生明马芝
Owner ARKMICRO TECH