Preparation method of whisker and particle synergistically toughened laminar ceramic matrix composite
A composite material and ceramic-based technology, applied in the field of material preparation, can solve the problems of large damage of reinforcement, high sintering temperature, limited effect, etc., and achieve the effects of improving compactness, improving strength and toughness, and reducing damage
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Embodiment 1
[0032] Example 1: (1) SiC whiskers with an aspect ratio of 8-11 and SiC particles with a diameter of 0.5 μm are used as reinforcements, and 20% alcohol by volume fraction is used as a solution, ultrasonicated for 30 minutes, magnetically stirred for 2 hours, and baked Dry;
[0033] (2) The (SiC whisker + SiC particles) film was prepared by casting method, the film thickness was 500 μm, the volume percentage of whiskers was 40%, and the volume fraction of particles was 13%;
[0034] (3) with trichloromethylsilane (CH 3 SiCl 3 , MTS) as source material, argon as diluent gas (flow rate 300-400ml / min), hydrogen as carrier gas (flow rate 200-350ml / min), H 2 The molar ratio to MTS is 10:1, the SiC substrate is deposited on the film by chemical vapor infiltration method, the deposition temperature is 1000-1100 ° C, and the deposition time is 80-100 h;
[0035] (4) Double-sided cast (SiC whisker + SiC particle) film on (SiC whisker + SiC particle) single-layer composite material, t...
Embodiment 2
[0039] Example 2: (1) SiC whiskers with an aspect ratio of 8 to 11 and SiC particles with a diameter of 0.5 μm are used as reinforcements, and 20% alcohol by volume fraction is used as a solution, ultrasonicated for 30 minutes, magnetically stirred for 2 hours, and baked Dry;
[0040] (2) The (SiC whisker + SiC particles) film was prepared by casting method, the film thickness was 500 μm, the volume percentage of whiskers was 30%, and the volume fraction of particles was 10%;
[0041] (3) with trichloromethylsilane (CH 3 SiCl3 , MTS) as source material, argon as diluent gas (flow rate 300-400ml / min), hydrogen as carrier gas (flow rate 200-350ml / min), H 2 The molar ratio to MTS is 10:1, the SiC substrate is deposited on the film by chemical vapor infiltration method, the deposition temperature is 1000-1100 ° C, and the deposition time is 80-100 h;
[0042] (4) Double-sided cast (SiC whisker + SiC particle) film on (SiC whisker + SiC particle) single-layer composite material, ...
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