Anti-single-particle-radiation MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) apparatus and preparation method

Abstract

The invention relates to an anti-single-particle-radiation MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) apparatus and a preparation method, and relates to an integrated circuit technology. The anti-single-particle-radiation MOSFET apparatus comprises a high concentration substrate, source and drain regions, an epitaxial layer, an epitaxial layer abnormal well and an epitaxial layer isotypical well, wherein the wells are reversed doped wells; a part of oxygen burying layer is arranged below the drain region vertically; and a buried layer opposite to the epitaxial layer in type is arranged below the well in the same type of the epitaxial layer to form a PN node absorbing layer with a well boundary. The apparatus has the beneficial effects that the transient current impulse time width generated by the single particle is halved, and the impulse height is reduced to 40% of that of the original one. Compared with an SOI (Silicon on Insulator) apparatus, the self-heating effect and floating effect and the like can be effectively weakened.

Description

technical field [0001] The present invention relates to integrated circuit technology. Background technique [0002] The anti-single particle CMOS integrated circuit and its preparation method relate to the technical field of integrated circuits. [0003] With the development of space technology and nuclear technology, more and more electronic devices need to be applied in various radiation environments. At the same time, with the reduction of the feature size of integrated circuits, the increase of device frequency and the reduction of operating voltage, soft errors caused by single events have become one of the main problems affecting the reliability of integrated circuits. In particular, the transient current pulse (SET) caused by a single event hitting the sensitive node of the circuit will cause the logic circuit function to malfunction. In the transient current pulse effect, the time width of the current pulse is the most important parameter, so how to reduce the tra...

AI Technical Summary

Problems solved by technology

However, the floating body effect is an inherent problem of SOI technology, which will cause device threshold voltage drift, parasitic bipolar effect, warping (kink) effect, decrease in output resistance in saturation region, transient change of drain current, and total dose of degradation, etc.

Meanwhile, the self-heating effect is also a serious problem in SOI devices

Images