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Carbon film auxiliary solar energy selective absorption film system and preparation method thereof

A technology of absorbing film and solar energy, applied in solar thermal power generation, solar thermal devices, energy industry, etc., can solve the problems of low emissivity, improve weather resistance and stability, high photothermal conversion efficiency, and long service life Effect

Active Publication Date: 2013-04-03
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The light-to-heat conversion efficiency of the currently disclosed absorbing film still needs to be improved, such as: the TiN disclosed in the patent publication number CN1594644A x o y The highest absorption rate in the film is only 94%, and the lowest emissivity is as high as 7%; the TiNO, TiAlNO, AlN, AlNO and Al disclosed in the patent publication number CN 101793437A 2 o 3 The absorption rate of the multilayer composite film system is greater than 93%, and the emissivity reaches 4%; the TiN disclosed in the patent publication number CN101240944A and CN 201196495Y x o y The film is coated with silicon dioxide SiO 2 After anti-reflection coating, the absorption rate reaches 96%, and the emissivity is lower than 4%.

Method used

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  • Carbon film auxiliary solar energy selective absorption film system and preparation method thereof
  • Carbon film auxiliary solar energy selective absorption film system and preparation method thereof
  • Carbon film auxiliary solar energy selective absorption film system and preparation method thereof

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Embodiment 1

[0039] A carbon film assisted solar selective absorption film system 1 and a preparation method thereof.

[0040] The structure of this absorbent film is attached figure 1 As shown, the thickness composition of each film layer is as follows:

[0041] Cu foil substrate / TiN x O y Thin film (50nm) / Amorphous carbon thin film (100nm) / Si 3 N 4 Thin film (20nm) / SiO 2 Thin film (86nm).

[0042] The reflection spectrum of the film is attached figure 2 As shown, the technical indicators of the film system are as follows:

[0043] According to the national standard GB / T6424-2007 and GB / T 4271-2007, the absorption rate of the film system reaches 97.8% and the emissivity is 3.2%.

[0044] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the preparation method of this absorption film system is as follows:

[0045] Firstly, using magnetron sputtering method, using Cu foil as the substrate, using TiN sintered according to the preset atomic ratio...

Embodiment 2

[0050] A carbon film assisted solar selective absorption film system 2 and a preparation method thereof.

[0051] The structure of this absorbent film is attached figure 1 As shown, the thickness composition of each film layer is as follows:

[0052] Cu foil substrate coated with Ag film / TiN x O y Thin film (96nm) / Amorphous carbon film (49nm) / Si 3 N 4 Thin film (25nm) / SiO 2 Thin film (89nm).

[0053] The reflection spectrum of the film is attached image 3 As shown, the technical indicators of the film system are as follows:

[0054] According to the national standard GB / T6424-2007 and GB / T 4271-2007, the absorption rate of the film system reaches 98.0% and the emissivity is 2.3%.

[0055] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the preparation method of this absorption film system is as follows:

[0056] First, using magnetron sputtering method, a layer of infrared highly reflective Ag film is plated on the Cu foil with ...

Embodiment 3

[0063] A carbon film assisted solar selective absorption film system 3 and a preparation method thereof.

[0064] The structure of this absorbent film is attached figure 1 As shown, the thickness composition of each film layer is as follows:

[0065] Al foil substrate / TiN x O y Thin film (150nm) / Amorphous carbon film (20nm) / Si 3 N 4 Thin film (60nm) / SiO 2 Thin film (50nm).

[0066] The reflection spectrum of the film is attached image 3 As shown, the technical indicators of the film system are as follows:

[0067] According to the national standard GB / T6424-2007 and GB / T 4271-2007, the absorption rate of the film system reaches 97.2% and the emissivity is 3.6%.

[0068] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the preparation method of this absorption film system is as follows:

[0069] First, use the magnetron sputtering method, with Al foil as the substrate, ceramic TiN as the target, Ar gas as the sputtering gas, and O...

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Abstract

The invention discloses a carbon film auxiliary solar energy selective absorption film system and a preparation method thereof. The absorption film system comprises a titanium oxynitride thin film, an amorphous carbon thin film, a silicon nitride thin film and a silicon dioxide thin film, which are plated on a metal substrate. Through introducing the amorphous carbon thin film, the solar energy absorption rate of the absorption film system is up to 98.0 percent, the emission rate can be reduced to 2.3 percent; and the absorption film system has extremely-high photo-thermal conversion efficiency and heat collection efficiency, is superior to the current international advanced level and can be widely applied to various solar energy photo-thermal converters. Compared with a heat absorption film of a conventional flat plate heat collector, the absorption film system has the advantages that after the amorphous carbon auxiliary heat absorption thin film is added, the solar energy absorption rate of the film system can be further improved, and meanwhile, the very low emission rate is kept; and the absorption film system can be continuously plated on a large-area substrate through an industrial magnetron sputtering preparation method, so that the effect of efficient production at a low cost is realized.

Description

Technical field [0001] The invention relates to the fields of heat-absorbing films of solar collectors and light-to-heat conversion materials, in particular to a carbon film-assisted solar selective absorption film system and a preparation method thereof. technical background [0002] With the rapid development of modern society and economy, human demand for energy is increasing. However, traditional energy reserves such as coal, oil, and natural gas continue to decrease and become increasingly scarce, resulting in rising prices. At the same time, environmental pollution caused by conventional fossil fuels is becoming more and more serious, which greatly restricts the development of society and the improvement of human life quality . The energy issue has become one of the most prominent issues in the contemporary world. Therefore, the search for new energy, especially pollution-free clean energy has become a hot spot of research. [0003] Solar energy is an inexhaustible and ine...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F24J2/48C23C14/06C23C14/10B32B9/04
CPCY02E10/40Y02P80/20
Inventor 陆卫陈飞良王少伟俞立明刘星星郭少令陈效双王晓芳
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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