Carbon film auxiliary solar energy selective absorption film system and preparation method thereof
A technology of absorbing film and solar energy, applied in solar thermal power generation, solar thermal devices, energy industry, etc., can solve the problems of low emissivity, improve weather resistance and stability, high photothermal conversion efficiency, and long service life Effect
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Embodiment 1
[0039] A carbon film assisted solar selective absorption film system 1 and a preparation method thereof.
[0040] The structure of this absorbent film is attached figure 1 As shown, the thickness composition of each film layer is as follows:
[0041] Cu foil substrate / TiN x O y Thin film (50nm) / Amorphous carbon thin film (100nm) / Si 3 N 4 Thin film (20nm) / SiO 2 Thin film (86nm).
[0042] The reflection spectrum of the film is attached figure 2 As shown, the technical indicators of the film system are as follows:
[0043] According to the national standard GB / T6424-2007 and GB / T 4271-2007, the absorption rate of the film system reaches 97.8% and the emissivity is 3.2%.
[0044] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the preparation method of this absorption film system is as follows:
[0045] Firstly, using magnetron sputtering method, using Cu foil as the substrate, using TiN sintered according to the preset atomic ratio...
Embodiment 2
[0050] A carbon film assisted solar selective absorption film system 2 and a preparation method thereof.
[0051] The structure of this absorbent film is attached figure 1 As shown, the thickness composition of each film layer is as follows:
[0052] Cu foil substrate coated with Ag film / TiN x O y Thin film (96nm) / Amorphous carbon film (49nm) / Si 3 N 4 Thin film (25nm) / SiO 2 Thin film (89nm).
[0053] The reflection spectrum of the film is attached image 3 As shown, the technical indicators of the film system are as follows:
[0054] According to the national standard GB / T6424-2007 and GB / T 4271-2007, the absorption rate of the film system reaches 98.0% and the emissivity is 2.3%.
[0055] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the preparation method of this absorption film system is as follows:
[0056] First, using magnetron sputtering method, a layer of infrared highly reflective Ag film is plated on the Cu foil with ...
Embodiment 3
[0063] A carbon film assisted solar selective absorption film system 3 and a preparation method thereof.
[0064] The structure of this absorbent film is attached figure 1 As shown, the thickness composition of each film layer is as follows:
[0065] Al foil substrate / TiN x O y Thin film (150nm) / Amorphous carbon film (20nm) / Si 3 N 4 Thin film (60nm) / SiO 2 Thin film (50nm).
[0066] The reflection spectrum of the film is attached image 3 As shown, the technical indicators of the film system are as follows:
[0067] According to the national standard GB / T6424-2007 and GB / T 4271-2007, the absorption rate of the film system reaches 97.2% and the emissivity is 3.6%.
[0068] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the preparation method of this absorption film system is as follows:
[0069] First, use the magnetron sputtering method, with Al foil as the substrate, ceramic TiN as the target, Ar gas as the sputtering gas, and O...
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