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Sapphire crystal with high mechanical property and fabrication method thereof

A sapphire crystal and crystal technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as insufficient mechanical properties of sapphire crystals, improve fracture surface energy, improve elastic modulus and fracture surface energy, wide space effect

Inactive Publication Date: 2013-04-17
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

What the present invention is to solve is the problem that the mechanical properties of sapphire crystals are insufficient at present

Method used

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  • Sapphire crystal with high mechanical property and fabrication method thereof
  • Sapphire crystal with high mechanical property and fabrication method thereof
  • Sapphire crystal with high mechanical property and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1: temperature gradient method growth doping amount is 5000ppm graphitic carbon and 1000ppmTiO 2 C,Ti:sapphire crystals

[0034] Weigh the α-Al with a purity of 99.999% 2 o 3 Raw material 3Kg, 1000ppm spectroscopically pure TiO 2(ie 3g), and 5000ppm spectroscopically pure graphite carbon (ie 15g), mixed and ground on a planetary ball mill for 24 hours, and then cold-dried and pressed into blocks for later use.

[0035] The temperature gradient method is used to grow C, Ti: sapphire crystals. The specific steps are: select a-oriented [11-20] pure sapphire as the seed crystal, put the pure sapphire seed crystal in the molybdenum crucible seed crystal tank, and uniformly press the block material Put it into the crucible, cover the crucible lid, and install the furnace. Vacuum to furnace pressure -3 Pa, continue to heat up to 2333K, keep the temperature for 3 hours after the raw material is melted, and after the melt is completely melted and stabilized,...

Embodiment 2

[0038] Embodiment 2: temperature gradient method growth doping amount is 1000ppm graphitic carbon and 500ppmTiO 2 C,Ti:sapphire crystals

[0039] Except that the added doped graphitic carbon is 1000ppm (ie 3g), and the doped TiO 2 Except for 500ppm (that is, 1.5g), the other ingredients are the same as in Example 1, mixed and ground on a planetary ball mill for 24 hours, taken out, cold-dried and pressed into blocks for future use.

[0040] The temperature gradient method is used to grow C, Ti: sapphire crystals. The specific steps are: select a-oriented [11-20] pure sapphire as the seed crystal, put the sapphire seed crystal in the seed crystal groove of the molybdenum crucible, and uniformly press the block material Put it into the crucible, cover the crucible lid, and install the furnace. Vacuum to furnace pressure -3 Pa, continue to heat up to 2363K, keep the temperature for 1h after the raw material is melted, and after the melt is completely melted and stabilized...

Embodiment 3

[0041] Embodiment 3: temperature gradient method growth doping amount is 10000ppm graphitic carbon and 3000ppmTiO 2 C,Ti:sapphire crystals

[0042] Except that the added doped graphitic carbon is 10000ppm (ie 30g), and the doped TiO 2 Except for 3000ppm (that is, 9g), other ingredients are the same as in Example 1, mixed and ground on a planetary ball mill for 24 hours, taken out, cold-dried and pressed into blocks for later use.

[0043] C, Ti: sapphire crystals are grown by the temperature gradient method. The specific steps are: select a-oriented [11-20] pure sapphire as the seed crystal, put the Sapphire seed crystal in the seed crystal tank of the molybdenum crucible, and uniformly press the block material Put it into the crucible, cover the crucible lid, and install the furnace. Vacuum to furnace pressure -3 Pa, continue to heat up to 2348K, keep the temperature for 2 hours after the raw material is melted, and after the melt is completely melted and stabilized, ...

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Abstract

The invention relates to a sapphire crystal with a high mechanical property and a fabrication method thereof. The sapphire crystal with the high mechanical property is doped with carbon and titanium; the doping content of the carbon is 1,000-10,000ppm of the total mass of the crystal; and the doping content of the titanium is 500-3,000ppm of the total mass of the crystal. The invention further discloses the fabrication method of the crystal, which comprises the following steps: mixing raw materials at a mixture ratio, grinding, conducting a forming technology, fabricating a crystal growth raw material, and growing the crystal by a temperature gradient method, a descent method or a kyropoulos method. The sapphire crystal doped with the carbon and the titanium is higher in surface hardness, breaking strength and breaking tenacity; and doping ions do not damage optical permeability of the sapphire crystal.

Description

technical field [0001] The invention relates to a sapphire crystal, in particular to a sapphire crystal with excellent mechanical properties and a preparation method thereof. Background technique [0002] Sapphire crystal is of great value in modern defense science and civilian technology applications because of its wide-band high transmission performance and relatively superior comprehensive physical and chemical properties. In the field of military optoelectronic equipment: infrared optical windows and fairings made of sapphire crystals have been widely used in airborne, spaceborne, shipborne, submarine-based, and land-based optoelectronic equipment, especially in high Mach number missile fairings, transparent The status and role of military equipment such as armor, submarine windows, and high-power strong lasers are irreplaceable. In the civil field: Sapphire crystal can be used as the observation window and Detection windows, such as: high-temperature resistant thermoc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20C30B17/00C30B11/00
Inventor 胡克艳唐慧丽徐军钱小波姜大朋
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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