Method for preparing silicon band by direct forming and silicon wafer direct forming device
A direct, silicon wafer technology, applied in chemical instruments and methods, self-melting liquid pulling method, crystal growth, etc., to achieve the effects of improving photoelectric conversion efficiency, improving purity, and process stability
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Embodiment 1
[0029] see Figure 1 ~ Figure 3, a silicon wafer direct forming device, comprising a silicon material melting and heat preservation device, a feeding device, a direct-draw dummy device 11 and a soft contact forming device with silicon, specifically: the silicon material melting and heat preservation device is a vacuum furnace, consisting of a quartz crucible 5, Insulation graphite cylinder 6, heating device 7, insulation graphite felt 8, thermocouple 9, temperature controller 10 and furnace shell 12 are composed, and heating device 7 adopts the mode of induction heating or resistance heating to heat, and heating device 7 is connected with the outside of vacuum furnace. The external power supply is connected, the thermocouple 9 is connected with the temperature controller 10 signal, the temperature of the quartz crucible 5 is detected in real time through the thermocouple 9, and the signal feedback is formed to the external power supply, and the heating output power of the heati...
Embodiment 2
[0034] This embodiment is basically the same as Embodiment 1, especially in that:
[0035] In this embodiment, the shape of the induction coil 2 is a special-shaped induction coil with a length-to-width ratio greater than 1 and a circular arc at both ends. The contact forming mechanism is established in the solid-liquid interface region 13, which is beneficial to direct directional solidification to form a silicon band with a uniform cross-section of the silicon wafer.
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