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Complementary metal oxide semiconductor (COMS) image sensor pixel structure and manufacturing method thereof

A technology of image sensor and pixel structure, which is applied in the direction of electrical components, electric solid-state devices, semiconductor devices, etc., can solve the problems of sensitivity, resolution and definition deterioration, chip performance deterioration, pixel optical crosstalk, etc., to achieve Effects of improving optical resolution and sensitivity, reducing length, and increasing light absorption

Active Publication Date: 2013-04-24
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the light transmission of conventional semiconductor materials is poor, so it is necessary to remove all the dielectric layer above the photosensitive element and fill it with a light-transmitting material to enhance its light absorption.
[0004] However, as the pixel size decreases, the distance between adjacent pixels also decreases sharply. When light is incident, the light will pass through the area between adjacent pixels through refraction and multiple reflections to reach the side One pixel, which will cause optical crosstalk between pixels, resulting in poor image signal sensitivity, resolution and clarity of the pixel, and poor chip performance

Method used

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  • Complementary metal oxide semiconductor (COMS) image sensor pixel structure and manufacturing method thereof
  • Complementary metal oxide semiconductor (COMS) image sensor pixel structure and manufacturing method thereof
  • Complementary metal oxide semiconductor (COMS) image sensor pixel structure and manufacturing method thereof

Examples

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no. 1 example

[0064] see figure 1 , in the first embodiment, the pixel structure of the CMOS image sensor includes a photodiode 10 and a multilayer structure (for standard CMOS device levels) on the silicon substrate 1, in this embodiment, the silicon substrate in this embodiment There is also a layer of gate oxide layer 2 between 1 and the multilayer structure, wherein the multilayer structure includes a polysilicon layer 3, a tungsten contact hole layer 4, a copper metal interconnection layer 5, and other through holes on it from bottom to top layers, metal interconnect layers, and interconnect dielectric layers. A deep groove 7 forming a light-transmitting space is formed above the photodiode 10 . The sidewall of the deep groove 7 is surrounded by a metal reflective layer 6 to reflect light incident on the metal reflective layer 6 . The metal reflective layer 6 is made of aluminum material with a thickness of 100A, and is prepared by PVD film forming technology.

[0065] Wherein, the d...

no. 2 example

[0075] read on figure 2 , in the second embodiment, the pixel structure of the CMOS image sensor includes a photodiode 10 and a multilayer structure (for standard CMOS device levels) on the silicon substrate 1, in this embodiment, the silicon substrate in this embodiment There is also a layer of gate oxide layer 2 between 1 and the multilayer structure, wherein the multilayer structure includes a polysilicon layer 3, a tungsten contact hole layer 4, a copper metal interconnection layer 5, and other through holes on it from bottom to top layers, metal interconnect layers, and interconnect dielectric layers. There is a deep groove 7 forming a light-transmitting space above the photodiode 10, and the side walls of the deep groove 7 are surrounded by a metal reflective layer 6 to reflect light incident on the metal reflective layer 6; a layer is also prepared on the top layer of the multilayer structure. A metal reflective layer 6 is used to reflect light incident from the top o...

no. 3 example

[0083] see Figure 6 , the pixel structure of the CMOS image sensor includes a photodiode 37 and a multilayer structure (for standard CMOS device levels) on a silicon substrate 31, and there is also a layer between the silicon substrate 31 and the multilayer structure in this embodiment Gate oxide layer 32, wherein the multi-layer structure includes from bottom to top the first polysilicon layer 33, the W contact hole layer 34, the Cu metal interconnect layer 35 and the first via layer 351, the interconnect dielectric layer (not marked), a deep groove 38 is arranged above the photodiode 37, and a light reflection shielding layer 39 is also provided in the side wall medium of the deep groove 38, and the distance between the light reflection shielding layer 39 and the side wall of the deep groove 38 is 0.1um , it completely surrounds the deep trench 39, and it includes a second polysilicon layer 391, a second contact hole layer 392, and a second metal interconnection layer A tha...

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Abstract

The invention discloses a complementary metal oxide semiconductor (COMS) image sensor pixel structure and a manufacturing method thereof. The COMS image sensor pixel structure comprises a light sensor arranged on a silicon substrate and a multi-layer structure used for a standard COMS device. A deep groove provided with a light-transmitting space is formed above the light sensor, a side wall of the deep groove is surrounded by light reflection shielding layers, and the light reflection shielding layers are continuously arranged in the longitudinal direction so as to reflect incident light on the light reflection shielding layers. According to the COMS image sensor pixel structure, the deep groove is surrounded by annular interconnecting wires, through holes, contact holes and polycrystalline silicon, so that incident light on the deep groove is completely reflected, optical crosstalk can be avoided, optical resolution and sensitivity of a pixel are effectively improved, and performance and reliability of a chip are improved.

Description

technical field [0001] The invention relates to the technical field of CMOS image sensors, in particular to a pixel structure of a CMOS image sensor capable of improving optical performance and a manufacturing method thereof. Background technique [0002] The CMOS image sensor has been developed rapidly due to its compatibility with the CMOS process. Compared with the CCD process, its process is completely compatible with the CMOS process. By making the photosensitive element and the CMOS processing circuit together on the silicon substrate, the cost is greatly reduced on the basis of ensuring performance, and the integration level can be greatly improved. , to manufacture products with higher pixels. [0003] The traditional CMOS image sensor uses the method of front lighting, and the photosensitive element and the CMOS processing circuit are implemented together on the silicon substrate at the same level, while the chip interconnection is fabricated on the CMOS processing...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14627H01L27/14629H01L27/14685
Inventor 康晓旭赵宇航
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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