A Carbon Nanotube Field Effect Transistor with Dual-material Understacked Hetero-Gate Structure

Abstract

The invention discloses a carbon nano tube field effect tube of a double-material underlapped heterogeneous grid structure. The field effect tube comprises a conductive ditch channel (1), a source area (2), a drain area (3), a grid electrode oxidation layer (4), a source electrode (S), a drain electrode (D) and a grid electrode (G). The conductive ditch channel (1), the source area (2) and the drain area (3) are all made of carbon nano tube materials. The grid electrode oxidation layer (4) is generated outside the conductive ditch channel (1), the source area (2) and the drain area (3) by utilizing methods of atom deposition and the like. A metal electrode layer is further precipitated outside the grid electrode oxidation layer (4). As a grid electrode (G) of the carbon nano tube field effect tube of the double-material underlapped heterogeneous grid structure, the grid electrode (G) utilizes two kinds of conductive metal with different work functions for manufacture so that a heterogeneous grid of the double-material underlapped heterogeneous grid structure is formed. Low leakage current ratio and high current switch ratio are achieved, a drain induced barrier lowering (DIBL) effect is restrained, and related performance index requirements of ITRS'10 can be well met.

Description

technical field [0001] The invention relates to the field of carbon nanotube field effect tubes, especially in the aspect of optimizing the structure of the carbon nanotube device to the performance of the device. Background technique [0002] Since Iijima [Iijima S . Helical Microtubules of Graphic Carbon[J]. Nature, 1991, 354(7): 56-58.] discovered carbon nanotubes in 1991, in understanding their basic properties and studying their potential engineering applications Important progress has been made [Baughman R H , Zakhidov A A , Heer W A D . Carbon nanotubes - the route toward applications[J]. Science, 2002, 297(5582): 787-792.]. Carbon nanotubes (CNTs) are seamless, hollow tubes rolled from graphene sheets formed of carbon atoms. Its special structure makes it have unique electrical, thermal, mechanical and other properties, and has important and broad application prospects in the fields of nanoelectronic devices and optoelectronic materials. Carbon nanotubes with diffe...

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Problems solved by technology

[0005] Technical problem: The purpose of the present invention is to solve the bipolar effect of the traditional carbon nanotube field effect tube, and as the size of the device continues to shrink, there will be short Considering the advantages of underlap gate devices and heterogeneous gate devices due to the channel effect, two metals with different work functions are used for the gate to form The heterogeneous gate of MOS, a carbon nanometer

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