Preparation method of high-purity indium

A pure indium and high-purity technology, applied in the field of preparation of high-purity indium, can solve the problems of a large gap in technical level, no production of 5N high-purity indium, no industrialization report, etc., to ensure high purity, high conversion rate, selective effect

Active Publication Date: 2013-05-15
HUNAN CHEM RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The preparation of high-purity indium generally uses 4N indium as a raw material, and two or more purification methods are often used. There are also reports in the literature that high-purity indium is obtained by a single method, such as the preparation of 7N indium by a single electrolysis method, and the purification of 6N indium by vacuum

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The number of particles above 0.5μm in the air is less than 35000 / M 3 Under ultra-clean conditions, add 18L of pure water with a resistivity greater than 15MΩ·cm, 625ml of analytically pure concentrated sulfuric acid with a mass content greater than 98% into a plastic container with a volume of 25L, and add 900g of 4N (99.99%) indium with a mass content of Among them, after the indium is completely dissolved, add 850g of high-purity sodium chloride with a mass content greater than 99.99% and 5.0g of analytically pure gelatin with a mass content greater than 99%, dissolve and stir evenly, add sulfuric acid to adjust the pH of the solution to 1.0, and then add pure water to bring the total solution volume to 20 L. Melt and cast 800g of indium with a mass content of 4N (99.99%) to form an anode plate, and use a titanium plate for the cathode, and perform electrolysis in an electrolytic cell made of a rigid polyvinyl chloride plastic plate. During electrolysis, the cell vo...

Embodiment 2

[0020] The number of particles above 0.5μm in the air is less than 35000 / M 3 Under ultra-clean conditions, add 18L of pure water with a resistivity greater than 15MΩ cm into a plastic container with a volume of 25L, 870ml of analytically pure concentrated sulfuric acid with a mass content greater than 98%, and add 1200g of 4N (99.99%) indium with a mass content of Among them, after the indium is completely dissolved, add 1500g of high-purity sodium chloride with a mass content greater than 99.99% and 6.0g of analytically pure gelatin with a mass content greater than 99%, dissolve and stir evenly, add sulfuric acid to adjust the pH of the solution to 1.5, and then add pure water to bring the total solution volume to 20 L. Melt and cast 800g of indium with a mass content of 4N (99.99%) to form an anode plate, and use a titanium plate for the cathode, and perform electrolysis in an electrolytic cell made of a rigid polyvinyl chloride plastic plate. During electrolysis, the cell ...

Embodiment 3

[0024] The number of particles above 0.5μm in the air is less than 35000 / M 3 Under ultra-clean conditions, add 18L of pure water with a resistivity greater than 15MΩ·cm, 1233ml of analytically pure concentrated sulfuric acid with a mass content greater than 98% into a plastic container with a volume of 25L, and add 1700g of indium with a mass content of 4N (99.99%) Among them, after the indium is completely dissolved, add 1000g of high-purity sodium chloride with a mass content greater than 99.99% and 7.0g of analytically pure gelatin with a mass content greater than 99%, dissolve and stir evenly, add sulfuric acid to adjust the pH of the solution to 1.5, and then add pure water to bring the total solution volume to 20 L. Melt and cast 800g of indium with a mass content of 4N (99.99%) to form an anode plate, and use a titanium plate for the cathode, and perform electrolysis in an electrolytic cell made of a rigid polyvinyl chloride plastic plate. During electrolysis, the cell...

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PUM

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Abstract

The invention discloses a preparation method of high-purity indium, which is implemented through preparing an indium sulfate electrolyte from purified water, an analytically pure concentrated sulfuric acid, 4N metal indium, high-purity sodium chloride and analytically pure gelatin, and carrying out two-time electrolysis and then vacuum distillation on electrolytic indium under ultraclean conditions so as to obtain 5N (99.999%)-7N (99.99999%) high-purity indium. According to the invention, because a 5N (99.999%)-7N (99.99999%) high-purity indium product is finally produced by using a method for carrying out two-time electrolysis and then vacuum distillation on electrolytic indium, the advantages such as large flexibility, strong selectivity and high conversion rate of an electrolytic purification method are utilized, and after the secondary electrolysis is completed, the physical purification step of vacuum distillation is increased; and meanwhile, the pollution problem caused by reagents is avoided, and the high purity of indium products is ensured, therefore, the method is easy for industrialization.

Description

technical field [0001] The invention relates to a method for preparing high-purity indium, in particular to a method for preparing high-purity indium with a mass content of 5N (99.999%) to 7N (99.9999%). Background technique [0002] Indium is a rare metal with unique physical and chemical properties, and can be widely used in semiconductors, electronic devices, transparent conductive coatings, fluorescent materials, metal organics and other fields. The indium used in these fields is required to be high-purity, and the mass content of indium is required to reach 5N (99.999%), and even more than 6N (99.9999%). High-purity metal indium, as the basic raw material for the production of semiconductor photovoltaic materials, is attracting great attention. [0003] The preparation of high-purity indium generally uses 4N indium as a raw material, and two or more purification methods are used. There are also literature reports that a single method is used to obtain high-purity indiu...

Claims

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Application Information

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IPC IPC(8): C25C1/22C22B9/02C22B58/00
CPCY02P10/234Y02P10/20
Inventor 王晓光贺周初彭爱国肖伟余长艳闻杰刘艳
Owner HUNAN CHEM RES INST
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