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igbt back structure and preparation method

A back structure and back technology, applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problem of poor ohmic contact on the back of the IGBT, and optimize the turn-off loss, optimize the compromise relationship, and optimize the conduction The effect of pressure drop

Active Publication Date: 2015-08-12
JIANGSU R & D CENTER FOR INTERNET OF THINGS +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to supplement the deficiencies existing in the prior art, to provide a back structure and preparation method of the IGBT, which solves the defect of poor ohmic contact on the back of the IGBT, and can optimize the compromise between the turn-off loss and the conduction voltage drop of the IGBT relation

Method used

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  • igbt back structure and preparation method
  • igbt back structure and preparation method

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Embodiment Construction

[0020] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0021] Such as Figure 5 Shown:

[0022] An IGBT back structure, comprising P+ collector regions 1 distributed at intervals, a back metal electrode 2, and a SiO2 protective layer 4; the SiO2 protective layer 4 is arranged on the back of the N-type base region 3, and contacts are arranged at intervals on the SiO2 protective layer 4 holes 5, the P+ collector regions 1 distributed at intervals corresponding to the contact holes 5 are etched to form recessed pits, and the remaining thickness of the P+ collector regions 1 distributed at intervals is less than the diffusion length of electrons therein; the back metal electrode 2 The metal completely fills the depressions of the P+ collector regions 1 distributed at intervals, and is in close contact with the P+ collector regions 1 distributed at intervals.

[0023] The width and spacing of the P+ collector regions ...

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Abstract

The invention provides an insulated gate bipolar translator (IGBT) back structure which comprises P+ collector regions distributed at intervals, back metal electrodes and an sio2 protection layer, wherein the sio2 protection layer is arranged on the back of an N-shaped base region, contact holes are formed in the sio2 protection layer at intervals, pits corresponding to the contact holes are etched in the P+ collector regions distributed at intervals, remainder thickness of the P+ collector regions distributed at intervals is smaller than diffusion length of electrons in the P+ collector regions, the pits in the P+ collector regions distributed at intervals are completely filled with metal of the back metal electrodes, and the metal of the back metal electrodes is in tight contact with the P+ collector regions distributed at intervals. The invention further provides a preparing method of the IGBT back structure. The IGBT back structure and the preparing method thereof are used for improving performance of IGBT devices.

Description

technical field [0001] The invention relates to a component structure, in particular to an IGBT back structure. Background technique [0002] IGBT, Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), with high-speed performance of power MOSFET The advantages of both low resistance performance and bipolar junction structure. When the device is turned on, the bipolar junction structure will produce a minority carrier injection effect to modulate the conductivity of the N-type base region, that is, the conductance modulation effect, thereby effectively reducing the on-resistance of the N-type base region and the device conduction voltage drop. Generally, there is a trade-off relationship between the turn-on voltage drop and turn-off loss of the IGBT, which is the trade-off relationship of the IGBT. The closer t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/417H01L29/08H01L21/331
Inventor 吴凯朱阳军卢烁今陈宏
Owner JIANGSU R & D CENTER FOR INTERNET OF THINGS