Double-side light entering quantum dot sensitization solar cell and preparation method thereof

A technology for quantum dot sensitization and solar cells, which is applied in the field of quantum dot sensitization solar cells and its preparation, to achieve the effects of promoting industrialization, benefiting battery performance, and low reaction temperature

Active Publication Date: 2013-05-22
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem to be solved by the present invention is to provide a quantum dot-sensitized solar cell capable of entering light from both sides and its preparation method in view of the problem that the existing quantum dot-sensitized solar cell can only receive light from one side

Method used

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  • Double-side light entering quantum dot sensitization solar cell and preparation method thereof
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  • Double-side light entering quantum dot sensitization solar cell and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] 1) Wash. In the test, the FTO conductive glass substrate should be cleaned and dried first. First, cut the conductive glass to the required size with a glass knife, clean it with a detergent, and then rinse it with deionized water. Then place it in an ultrasonic cleaner and use acetone-free, ethanol, and ionized water to ultrasonically clean it for 10 minutes, and finally dry it with nitrogen to obtain the substrate with a clean surface required for the experiment.

[0035] 2) Preparation of quantum dot-sensitized photoanode. Scrape-coat a layer of pre-prepared TiO on clean FTO 2 slurry, sintered at 450 °C for 30 min to form TiO 2 Porous layer, repeated scraping until TiO 2 After reaching about 12 μm, the sintered photoanode is sequentially deposited three layers of CdS, five layers of CdSe, and two layers of ZnS quantum dots through a chemical bath, and finally washed thoroughly with deionized water, and then dried in an oven at 50 ° C. use.

[0036] 3) Prepare t...

Embodiment 2

[0041] 1) Wash. In the test, the FTO conductive glass substrate should be cleaned and dried first. First, cut the conductive glass to the required size with a glass knife, clean it with a detergent, and then rinse it with deionized water. Then place it in an ultrasonic cleaner and use acetone-free, ethanol, and ionized water to ultrasonically clean it for 10 minutes, and finally dry it with nitrogen to obtain the substrate with a clean surface required for the experiment.

[0042] 2) Preparation of quantum dot-sensitized photoanode. Scrape-coat a layer of pre-prepared TiO on clean FTO 2 slurry, sintered at 450 °C for 30 min to form TiO 2 Porous layer, repeated scraping until TiO 2 After reaching about 12 μm, the sintered photoanode is sequentially deposited three layers of CdS, five layers of CdSe, and two layers of ZnS quantum dots through a chemical bath, and finally washed thoroughly with deionized water, and then dried in an oven at 50 ° C. use.

[0043] 3) Prepare t...

Embodiment 3

[0048] 1) Wash. In the test, the FTO conductive glass substrate should be cleaned and dried first. First, cut the conductive glass to the required size with a glass knife, clean it with a detergent, and then rinse it with deionized water. Then place it in an ultrasonic cleaner and use acetone-free, ethanol, and ionized water to ultrasonically clean it for 10 minutes, and finally dry it with nitrogen to obtain the substrate with a clean surface required for the experiment.

[0049] 2) Preparation of quantum dot-sensitized photoanode. Scrape-coat a layer of pre-prepared TiO on clean FTO 2 slurry, sintered at 450 °C for 30 min to form TiO 2 Porous layer, repeated scraping until TiO 2 After reaching about 12 μm, the sintered photoanode is sequentially deposited three layers of CdS, five layers of CdSe, and two layers of ZnS quantum dots through a chemical bath, and finally washed thoroughly with deionized water, and then dried in an oven at 50 ° C. use.

[0050] 3) Prepare t...

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Abstract

The invention relates to a double-side light entering quantum dot sensitization solar cell and a preparation method thereof. The double-side light entering quantum dot sensitization solar cell comprises a quantum dot sensitization light anode, a counter electrode and electrolytes, wherein the counter electrode is an in-situ growth copper sulfide (Cus) slice with a nanostructure. Materials of the counter electrode of the solar cell is Cus, and the Cus has good catalytic activity for the electrolytes, and furthermore the shape of the materials is a two-dimensional nanometer slice in two-dimensional structure, so that the counter electrode has high electronic mobility and specific surface area. The double-side light entering quantum dot sensitization solar cell has the prominent advantages that when the thickness of the materials of the Cus counter electrode is low, the counter electrode has good light admitting quality, the light admitting range of the counter electrode is roughly consistent with the light absorption range of quantum dots used as light absorption materials, so that the cell can achieve good efficiency even when light enters from the bask side of the cell, and the cell can be manufactured in to a double-side light entering cell. Accordingly, the use ratio of sunlight is improved, cost of the cell is reduced, and the double-side light entering quantum dot sensitization solar cell has a good application prospect.

Description

technical field [0001] The invention relates to a quantum dot sensitized solar cell capable of entering light from both sides and a preparation method thereof, belonging to the field of optoelectronic materials and devices. technical background [0002] The current energy problem is becoming more and more urgent, and solar energy has great development potential as a clean energy source. Reasonable use of solar energy can effectively alleviate energy problems, and solar cells, as a typical representative of rational use of solar energy, have been developed for many years. After several generations, great breakthroughs have been made. The third-generation solar cells that are currently developing rapidly mainly include dye-sensitized solar cells and organic cells. The photoelectric conversion efficiency of organic cells has exceeded 10%. The cell structure is simple and energy-efficient. Making thin films by roll-to-roll has great industrial prospects, but organic batteries ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/042H01G9/20
Inventor 方国家柯维俊陶洪雷红伟王静
Owner WUHAN UNIV
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