Quasi monocrystalline silicon casting device and method

A technology of quasi-single crystal silicon and ingot casting equipment, which is applied in the field of quasi-single crystal silicon ingot casting and ingot casting, can solve the problems affecting the efficiency of quasi-single crystal silicon ingot casting, the difficulty of temperature gradient control, and the difficulty of improving the process, etc., to achieve Low cost, wide range of applications, and the effect of improving production efficiency

Inactive Publication Date: 2013-07-10
徐传兴
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the quasi-single crystal ingot process in the prior art has the problem of high temperature gradient control, which seriously affects the efficiency of the quasi-single crystal silicon ingot, increases the difficulty of the process, and has a low yield

Method used

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  • Quasi monocrystalline silicon casting device and method
  • Quasi monocrystalline silicon casting device and method
  • Quasi monocrystalline silicon casting device and method

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Embodiment Construction

[0059] In order to understand the technical content of the present invention more clearly, the following examples are given in detail.

[0060] see figure 1 Shown is a schematic structural view of an embodiment of the quasi-single crystal silicon ingot casting equipment of the present invention.

[0061] The quasi-single crystal silicon ingot casting equipment includes a housing 1, an ingot chamber 2 and a seed crystal storage chamber 3 arranged in the housing 1, a crucible 4 and a heating device arranged in the ingot chamber 2 5. An insulated door 6 arranged between the seed crystal storage chamber 3 and the ingot casting chamber 2, and used to pass the seed crystal through the insulated door 6 and set it in the seed crystal storage chamber 3 or the seed crystal feeding device 7 in the crucible 4 of the ingot chamber 2. Wherein, the heating device 5 is arranged around the crucible 4, and the surface of the crucible 4 can have silicon nitride (SiN) with a thickness less than...

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Abstract

The invention relates to a quasi monocrystalline silicon casting device. The device comprises a casting chamber and a seed crystal storage chamber arranged in the shell, an insulation door arranged between the seed crystal storage chamber and the casting chamber, and a seed crystal addition device capable of moving the seed crystal from the storage chamber through the insulation door to a crucible in the casting chamber. The invention also relates to a quasi monocrystalline silicon casting using the device. The method is as below: first heating the crucible and silicon material therein by a heating device; completely melting the silicon raw material into molten silicon, and controlling temperature to a molten silicon state before crystallization; moving the seed crystal from the seed crystal storage to the casting chamber by the crystal addition device; and growing crystal to form a silicon ingot. The quasi monocrystalline silicon casting device and method provided by the invention greatly reduce the difficulty in controlling temperature, and avoid the problems in prior art, such as difficulty in accurate control of crucible bottom temperature and complete melting or failure in melting of the seed crystal, thereby improving production efficiency and effectively guaranteeing the rate of finished products.

Description

technical field [0001] The invention relates to the technical field of ingot casting, in particular to the technical field of quasi-single crystal silicon ingot casting. Background technique [0002] Quasi-single crystal silicon (mono like, also known as "mono-like silicon") is a process based on polycrystalline ingots. When growing crystals, a single crystal seed crystal is used in part to obtain polycrystalline silicon wafers that are similar in appearance and electrical properties to single crystals. . This technology of forming monocrystalline silicon by casting ingots consumes only 5% more power than ordinary polycrystalline silicon, and the quality of the produced monocrystalline silicon is close to that of Czochralski monocrystalline silicon. It is currently the most widely used ingot in the photovoltaic industry. One of the crafts. [0003] There are a variety of quasi-single crystal silicon ingot casting processes in the prior art, and relatively novel ingot casti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06C30B11/00
Inventor 徐传兴
Owner 徐传兴
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