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Manufacturing method of magnetic sensing device

A magnetic sensor and square technology, which is applied in the field of magnetic sensor device manufacturing, can solve the problems of large volume, poor conductivity and narrow operating temperature range of semiconductor magnetic sensor devices.

Inactive Publication Date: 2013-07-10
LIYANG CITY PRODIVITY PROMOTION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problems of traditional semiconductor magnetic sensor devices such as large volume, narrow operating temperature range, and poor conductivity, and to find a more economical and practical magnetic material for magnetic sensor devices that can maintain linearity in a wider magnetic field range, the present invention provides A method for manufacturing a magnetic sensor device, the magnetic sensor device manufactured according to the method has an operating temperature in the range of 2K to 500K (ie -271°C to 227°C), and a resistivity in the range of 250μΩcm to 3500μΩcm

Method used

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  • Manufacturing method of magnetic sensing device

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Embodiment 1

[0017] The unit sccm in the text refers to "standard cubic centimeter per minute", that is, the standard state milliliter / minute (1ml=1cm 3 ), the standard state is 0°C, 1atm.

[0018] 1. Preparation of active layer pattern. A "cross" pattern for depositing a thin film is formed on a quartz substrate by means of a mask. The side length of the central square of the pattern is 1.0 micron, and the length of the protruding part on the four sides of the central square is 0.2 micron;

[0019] 2. Admit argon and oxygen at room temperature. The DPS-III ultra-high vacuum magnetron sputtering coating machine (built-in computer control software) of the Shenyang Keyi Center of the Chinese Academy of Sciences is adopted, and the vacuum degree of the back and the bottom is less than 5.0×10 -5 Pa, the high-purity Ar gas and O 2 The gas mixture is passed into the vacuum chamber. Wherein the Ar gas flow rate is 10sccm, O 2 The air flow is 2.7 sccm. When the vacuum degree drops to about ...

Embodiment 2

[0029] 1. The preparation of the active layer pattern is the same as step 1 of Example 1;

[0030] 2, feed argon and oxygen at room temperature, same as step 2 of embodiment 1;

[0031] 3, pre-sputtering is the same as step 3 of embodiment 1;

[0032] 4. Sputtering film formation. Open the baffle of the quartz substrate, the substrate is rotated at a constant speed of 20 rpm, and the sputtering time is controlled to be 0.5 minutes, 2 minutes and 20 minutes respectively, and samples I, II and III are obtained;

[0033] 5, the preparation method of electrode is the same as embodiment 1 step 5;

[0034] 6, the preparation method of protective layer is the same as embodiment 1 step 6;

[0035] The thickness of the active layer was measured using a Dektak3 surface topography instrument, and the results are listed in Table 1.

[0036] Using the physical property measuring instrument PPMS-9 produced by Quantum Design Company in the United States, the resistivity of magnetic sensor ...

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Abstract

The invention discloses a manufacturing method of a magnetic sensing device, working temperature of the magnetic sensing device manufactured through the method is within the range (of) from 2K to 500K (-271DEG C to 227DEG C), and the resistivity of the magnetic sensing device is from 250 micro-ohm*centimeter to 3500micro-ohm*centimeter. Under the working temperature from 2K to 500K, linearity degree of a sample is less than two per thousand, linearity degree of a magnetic field is maintained between -7kOe to 7kOe, and the magnetic sensing device has the advantages of being stable in performance, wide in detection range and the like. The magnetic sensing device solves the problems that the traditional semiconductor magnetic sensing device is large in size, narrow in working temperature range, bad in conductivity and the like, and belongs to a magnetic material which is economical, practical and capable of keeping linearity degree in a wide magnetic field range.

Description

technical field [0001] The invention relates to a manufacturing method of a magnetic sensor device. Background technique [0002] Magnetic sensor devices have been widely used in brushless motors, gear speed detection, non-contact switches in process control, positioning switches, automotive safety devices ABS, automotive engine ignition timing, current and voltage sensors, etc. Magnetic sensor devices are composed of active Layers, electrodes and packages that protect them. It is characterized by non-contact sensing, high reliability, used to detect current and voltage, no insertion loss, and complete isolation of input and output signals, no overload damage, etc. Therefore, it is used in the research of magnetic materials and magnetic measuring instruments, ground The precise drawing of magnetic field maps, geological exploration, navigation, aviation, aerospace and other fields have very important uses. [0003] At present, semiconductor materials such as silicon, indiu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12G01R33/09H10N50/01
Inventor 张俊丛国芳
Owner LIYANG CITY PRODIVITY PROMOTION CENT