Nitrogen doped titanium dioxide film preparation method

A technology of titanium dioxide and thin films, which is applied in the field of preparation of nitrogen-doped titanium dioxide thin films, can solve problems such as unsatisfactory nitrogen doping effects, and achieve the effect of simple and easy method, uniform nitrogen doping, and high nitrogen content

Active Publication Date: 2013-07-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

The existing nitrogen doping method is to provide nitrogen source through ammonia gas, and realize the doping of nitrogen through th

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  • Nitrogen doped titanium dioxide film preparation method
  • Nitrogen doped titanium dioxide film preparation method
  • Nitrogen doped titanium dioxide film preparation method

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Embodiment Construction

[0026] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0027] An embodiment of the present invention provides a method for preparing a nitrogen-doped titanium dioxide film, which specifically includes the following steps:

[0028] Step 101, treating the surface of the silicon substrate with a standard solution and hydrofluoric acid to form a silicon-hydrogen bond on the surface of the silicon substrate, such as figure 1 As shown, wherein, the standard solution refers to: No. 1 liquid, concentrated sulfuric acid: hydrogen peroxide = 4: 1; No. 2 liquid, ammonia water: pure water: hydrogen peroxide = 1: 5: 1; No. 3 liquid, hydrochloric acid: hydrogen peroxide: pure water = 1:1:6; place the silicon substrate after the hydrogenation treatment in the reaction chamber of the atomic layer deposition equipment;

[0029] Step 102, turn on the atomic layer deposition equipment, adjust the ...

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Abstract

The invention relates to the technical field of titanium dioxide preparation, and concretely relates to a nitrogen doped titanium dioxide film preparation method. The preparation method comprises the following steps: disposing a silicon substrate in the reaction chamber of an atomic layer deposition apparatus; letting a titanium source gas in the reaction chamber of the atomic layer deposition (ALD) apparatus by treating nitrogen as a carrying gas to make titanium atoms in the titanium source gas be adsorbed on the silicon substrate; letting nitrogen in the reaction chamber of the ALD apparatus, and carrying out plasma discharge for making parts of nitrogen atoms and parts of the titanium atoms form covalent bonds after nitrogen ionization; letting an oxygen-containing source in the reaction chamber of the ALD apparatus for making the titanium atoms unreacted with the nitrogen atoms and oxygen atoms in the oxygen-containing source form titanium-oxygen bonds; and repeating the above steps to grow the nitrogen atom-containing titanium dioxide film layer by layer. The preparation method which utilizes the ALD apparatus to carry out nitrogen doping of the titanium dioxide film has the advantages of realization of the uniform nitrogen doping in a whole structure, high nitrogen element content after nitrogen doping, and substantially increased film performances.

Description

technical field [0001] The invention relates to the technical field of titanium dioxide preparation, in particular to a method for preparing a nitrogen-doped titanium dioxide film. Background technique [0002] Titanium dioxide (TiO 2 ) films have been used as pigments and opacifiers since the early part of the last century. In 1972, Fujishima and others discovered TiO 2 After having photocatalysis, scientists from various countries began to study its performance, and applied them to kill cancer cells, and deodorize kitchens and bathrooms. The principle is TiO 2 The bandgap width is 3.2eV. When irradiated with light equal to or less than 387.5nm, the separation of electron-hole pairs can be realized. After the electrons and holes reach the ion surface, the reaction can be accelerated, thereby realizing the catalytic effect. TiO 2 Because of its good stability, low cost and harmless to the human body, it has more development in photocatalyst than SnO 2 、WO 3 , ZnO 3 O...

Claims

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Application Information

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IPC IPC(8): C23C16/40
Inventor 夏洋饶志鹏万军李超波陈波刘键江莹冰石莎莉李勇滔
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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