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Nonvolatile memory element and manufacturing method thereof

A technology of non-volatile storage and components, which is applied to electrical components, semiconductor devices, electric solid-state devices, etc., and can solve problems such as misoperation and instability of non-volatile storage components

Active Publication Date: 2016-06-22
PANASONIC SEMICON SOLUTIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, in the variable resistance element of the conventional structure described above, it has been found that the nonvolatile memory element, which operates stably at first, becomes unstable during continuous operation and malfunctions occur.

Method used

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  • Nonvolatile memory element and manufacturing method thereof
  • Nonvolatile memory element and manufacturing method thereof
  • Nonvolatile memory element and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment approach 1

[0105] figure 1 It is a cross-sectional view showing a configuration example of the resistance variable nonvolatile memory element 10 according to Embodiment 1 of the present invention. like figure 1 As shown, the variable resistance nonvolatile memory element 10 of Embodiment 1 has a substrate 100 on which a first wiring 101 is formed, a first interlayer insulating layer 102, and a first contact plug 103 (50 to 300 nm in diameter). ), wherein the first interlayer insulating layer 102 is composed of a silicon oxide film (film thickness 300-500 nm) formed on the substrate 100 covering the first wiring 101; the first contact plug 103 mainly contains tungsten , formed through the first interlayer insulating layer 102 and electrically connected to the first wiring 101 . Then, on the first interlayer insulating layer 102, the variable resistance element 10a having the second electrode (lower electrode in this embodiment) 104 (film 5 to 100 nm in thickness), the variable resist...

Embodiment approach 2

[0134] Image 6 It is a cross-sectional view showing a configuration example of the resistance variable nonvolatile memory element 20 according to Embodiment 2 of the present invention. and figure 1 The shown variable resistance nonvolatile memory element 10 according to Embodiment 1 of the present invention is different in that each layer of the variable resistance layer and the first electrode and the second electrode are arranged upside down. That is, in contrast to the arrangement of the first electrode 106 above the second electrode 104 in Embodiment 1, the first electrode 106 is arranged below the second electrode 104 in this embodiment.

[0135] like Image 6 As shown, the variable resistance layer 125 of the variable resistance nonvolatile memory element 20 of Embodiment 2 is also made of the first transition metal oxide layer 125x, the second transition metal oxide layer 125y, and the third transition metal oxide layer. layer 125z is a stacked structure consisting...

Embodiment approach 3

[0148] Figure 8 It is a cross-sectional view showing a structural example of the resistance variable nonvolatile memory element 30 according to Embodiment 3 of the present invention. and figure 1 The shown variable resistance nonvolatile memory element 10 according to Embodiment 1 of the present invention has the same structural elements, but the film thickness and resistivity of each variable resistance layer are different.

[0149] That is, in the nonvolatile memory element 10 of Embodiment 1, tantalum oxide is used as the first to third transition metal oxide layers. In this case, the structure is: TaO as the third transition metal oxide layer 115z z The oxygen content rate z=0.68 (resistivity: 0.33mΩcm), the film thickness is 10nm, as the TaO of the second transition metal oxide layer 115y y The oxygen content rate z=1.29 (resistivity: 6mΩcm), the film thickness is 35nm, as the TaO of the first transition metal oxide layer 115x x The oxygen content rate x=2.4 (resisti...

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Abstract

To provide a variable resistance nonvolatile memory element whose resistance changes stably at a low voltage, is suitable for increasing the capacity, and has excellent reliability, and a method for manufacturing the same. The non-volatile memory element (10) has: a first electrode (106), a second electrode (104) and a resistance change layer (115) whose resistance value changes reversibly based on an electric signal applied between the two electrodes change, the variable resistance layer (115) has a first transition metal oxide layer (115x) having a composition represented by MOx and a second transition metal oxide layer having a composition represented by MOy (where x>y) are sequentially stacked ( 115y ), and a stacked structure of a third transition metal oxide layer ( 115z ) composed of MOz (where y>z).

Description

technical field [0001] The present invention relates to a variable resistance nonvolatile memory element whose resistance value is changed by applying a voltage pulse. Background technique [0002] In recent years, with the development of digital technology, the functions of electronic equipment such as portable information equipment and information home appliances have been further improved. Along with the enhancement of the functions of these electronic devices, the refinement and speed-up of the semiconductor elements used are advancing rapidly. Among them, the use of a large-capacity nonvolatile memory represented by a flash memory is rapidly expanding. Furthermore, research and development of a variable resistance nonvolatile memory device using a so-called variable resistance element is underway as a next-generation new nonvolatile memory that replaces the flash memory. Here, the variable resistance element refers to an element that has a property that its resistance...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/105H01L45/00H01L49/00H10N80/00H10N99/00
CPCH10N70/24H10N70/026H10N70/8833H10N70/883H10N70/021H10B63/00
Inventor 三河巧早川幸夫二宫健生川岛良男米田慎一
Owner PANASONIC SEMICON SOLUTIONS CO LTD
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