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Preparation method of In2S3 (indium sulfide) buffer layer thin film for CIGS (copper indium gallium diselenide) solar cell

A technology for solar cells and copper indium gallium selenide, which is applied to circuits, electrical components, and final product manufacturing, etc., can solve the problems of insufficient visible light transmittance, small film energy band gap, and high production cost, and achieve visible light transmittance. The effect of high rate, low equipment requirements and low production cost

Inactive Publication Date: 2013-09-18
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to overcome the deficiencies of the prior art, such as insufficiently high visible light transmittance, small film energy bandgap value, high production cost and other shortcomings

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Step 1, cleaning the substrate,

[0036] Clean the substrate with acetone and ethanol in ultrasonic for 12 minutes respectively, then rinse thoroughly with deionized water and dry in an incubator;

[0037] Step 2, prepare reaction solution,

[0038] Take a certain amount of InCl 3 4H 2 O, CH 3 CSNH 2 and CH 3 The COOH (AC) solution was placed in a small beaker to prepare a mixed solution, and the concentration ratio of In ions and S ions in the mixed solution was controlled by n In :n S 1:6, and adjust the pH value of the mixed solution to 1.6 to obtain a reaction solution;

[0039] Step 3, depositing In 2 S 3 buffer film,

[0040] Put the small beaker containing the reaction solution into a constant temperature water bath at 80°C, and fix the substrate in the reaction solution, then seal the mouth of the small beaker with aluminum paper, and stir the substrate and the reaction solution under the stirring of a magnetic stirrer. reaction, after the reaction is...

Embodiment 2

[0045] Step 1, cleaning the substrate,

[0046] Clean the substrate with acetone and ethanol in ultrasonic for 12 minutes respectively, then rinse thoroughly with deionized water and dry in an incubator;

[0047] Step 2, prepare reaction solution,

[0048] Take a certain amount of InCl 3 4H 2 O, CH 3 CSNH 2 and CH 3 The COOH (AC) solution was placed in a beaker to prepare a mixed solution, and the drugs used were all analytically pure, and the concentration ratio of In ions and S ions in the mixed solution was controlled to n In :n S 1:6, and adjust the pH value of the mixed solution to 1.8 to obtain a reaction solution;

[0049] Step 3, depositing In 2 S 3 buffer film,

[0050] Put the small beaker containing the reaction solution into a constant temperature water bath at 80°C, and fix the substrate in the reaction solution, then seal the mouth of the small beaker with aluminum paper, and stir the substrate and the reaction solution under the stirring of a magnetic ...

Embodiment 3

[0055] Step 1, cleaning the substrate,

[0056] Clean the substrate with acetone and ethanol in ultrasonic for 12 minutes respectively, then rinse thoroughly with deionized water and dry in an incubator;

[0057] Step 2, prepare reaction solution,

[0058] Take a certain amount of InCl 3 4H 2 O, CH 3 CSNH 2 and CH 3 The COOH (AC) solution was placed in a beaker to prepare a mixed solution, and the drugs used were all analytically pure, and the concentration ratio of In ions and S ions in the mixed solution was controlled to n In :n S 1:6, and adjust the pH value of the mixed solution to 2.2 to obtain a reaction solution;

[0059] Step 3, depositing In 2 S 3 buffer film,

[0060] Put the small beaker containing the reaction solution into a constant temperature water bath at 80°C, and fix the substrate in the reaction solution, then seal the mouth of the small beaker with aluminum paper, and stir the substrate and the reaction solution under the stirring of a magnetic ...

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Abstract

The invention relates to a preparation method of an In2S3 (indium sulfide) buffer layer thin film for a CIGS (copper indium gallium diselenide) solar cell. The preparation method comprises the following steps that 1, a basal body is cleaned; 2, reaction solution is prepared, a certain amount of InCl3.4H2O, CH3CSNH2 and CH3COOH solution are taken to be placed in a container, in addition, the concentration ratio of In ions to S ions is controlled to be within 1:2-1:10, the pH value of mixed solution is regulated, and reaction solution is obtained; 3, the In2S3 buffer layer thin film is deposited, the basal body is fixed in the reaction solution, the container is sealed by aluminum paper, the stirring is carried out at a certain temperature, and the basal body deposited with the In2S3 buffer layer thin film is obtained after the complete reaction; and 4, impurities are removed. The visible light transmittance of the In2S3 buffer layer thin film prepared by the preparation method exceeds 85 percent, the energy band gap reaches 2.7eV, and the In2S3 buffer layer thin film can be used as the buffer layer thin film for the CIGS solar cell for replacing a CdS (cadmium sulfide) thin film.

Description

technical field [0001] The invention relates to a preparation method of an In2S3 buffer layer thin film for a copper indium gallium selenide (CIGS) solar cell. Background technique [0002] Copper indium gallium selenide (CIGS) thin-film solar cells have excellent properties such as low cost, high photoelectric conversion rate, and stable performance, making them one of the most promising photovoltaic cells. In 1974, Wagner and others at Bell Laboratories in the United States first developed a single crystal CIS solar cell with a photoelectric conversion rate of 5%. In 1982, Chen et al. of Boeing (Boeing) used evaporating Cd 1-x Zn x S replaces CdS as the buffer layer and forms a heterojunction with the CIS polycrystalline film, which increases the open circuit voltage of the device and makes the conversion rate of the CIS polycrystalline solar cell reach 10.6%. In 1985, Potter et al. developed a new type of battery with CIS as the absorbing layer, CdS as the buffer layer...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 李伟刘平王卫兵马凤仓刘新宽陈小红何代华
Owner UNIV OF SHANGHAI FOR SCI & TECH
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