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Method for synthesizing silicon nitride nano ring by CVD (chemical vapor deposition) method

A technology of silicon nitride and nano rings, which is applied in chemical instruments and methods, nitrogen compounds, nanotechnology, etc., can solve the problems of difficult purification and cumbersome preparation process, and achieve easy-to-obtain, simple preparation process, simple and efficient preparation Effect

Inactive Publication Date: 2013-09-25
河北地质大学
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for synthesizing silicon nitride nanorings by CVD method, so as to solve the problems that the subsequent purification is difficult and the preparation process is complicated due to the addition of a catalyst when preparing silicon nitride nanorings by the existing method

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  • Method for synthesizing silicon nitride nano ring by CVD (chemical vapor deposition) method
  • Method for synthesizing silicon nitride nano ring by CVD (chemical vapor deposition) method
  • Method for synthesizing silicon nitride nano ring by CVD (chemical vapor deposition) method

Examples

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Effect test

Embodiment 1

[0047] Weigh 0.28g of commercially available 200-mesh silicon powder and 0.6g of commercially available amorphous silica powder at a molar ratio of 1:1, mix the two evenly and place them in a corundum boat; place the corundum with the mixed powder Put the boat into the central area of ​​the horizontal tubular resistance furnace, seal the two ends of the horizontal tubular resistance furnace and vacuumize it to remove the oxygen in the reaction chamber as much as possible; then feed nitrogen and Ammonia gas is used as the nitriding reaction gas, the gas flow volume ratio of high-purity nitrogen gas and ammonia gas is 3:1, and the atmosphere flow rate is 120 sccm; after the gas flow is stable, start heating the horizontal tubular resistance furnace so that it can be heated at a rate of 5°C / min. The heating rate is raised to 1300°C; heat preservation at 1300°C for 2 hours, then close the heating furnace, stop heating the horizontal tubular resistance furnace, and continue to pass ...

Embodiment 2

[0049] Weigh 0.28g of silicon powder obtained by wet ball milling process and 0.6g of commercially available amorphous silicon dioxide powder at a molar ratio of 1:1, mix the two evenly and place them in a corundum boat; put the mixed powder Put the corundum boat into the central area of ​​the horizontal tube resistance furnace, seal the two ends of the horizontal tube resistance furnace and vacuumize it to remove the oxygen in the reaction chamber as much as possible; then pass into the horizontal tube resistance furnace Nitrogen and ammonia are used as nitriding reaction gases. The gas flow volume ratio of high-purity nitrogen and ammonia is 1:5, and the atmosphere flow is 80 sccm. After the air flow is stable, start heating the horizontal tube resistance furnace to make it 5 ℃ / The heating rate of min is raised to 1200°C; keep warm at 1200°C for 6 hours, then close the heating furnace, stop heating the horizontal tubular resistance furnace, and continue to feed the nitridin...

Embodiment 3

[0051] Weigh 0.28 g of silicon powder obtained by wet ball milling (ball milling commercially available 200-mesh silicon powder) and 0.6 g of commercially available amorphous silica powder at a molar ratio of 1:1, mix the two evenly and place in In the corundum boat; put the corundum boat containing the mixed powder into the central area of ​​the horizontal tubular resistance furnace, seal the two ends of the horizontal tubular resistance furnace and vacuumize it to remove the oxygen in the reaction chamber as much as possible; Then feed nitrogen and ammonia into the horizontal tubular resistance furnace as the nitriding reaction gas. The gas flow volume ratio of high-purity nitrogen and ammonia is 3:1, and the atmosphere flow is 120 sccm; start heating the horizontal tube after the gas flow is stable. Type electric resistance furnace, make it heat up to 1300°C at a heating rate of 8°C / min; keep warm at 1300°C for 2 hours, then close the heating furnace, stop heating the horizo...

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Abstract

The invention provides a method for synthesizing a silicon nitride nano ring by a CVD (chemical vapor deposition) method. The method comprises the following steps of: evenly mixing silicon powder with silicon dioxide powder according to the molar ratio of 1:1 to obtain mixed powder; putting the mixed powder in a vacuum space; leading nitrogen and ammonia gas as nitridation reaction gases according to the gas flow volume ratio of (1:5) to (5:1), wherein the gas flow of the nitridation reaction gases is 50-200 sccm; heating to 1200-1400 DEG C and carrying out heat preservation for 2-6 hours to prepare the silicon nitride nano ring, and naturally cooling. Compared with the prior art, a catalyst does not need to be added in preparation of the silicon nitride nano ring, so that subsequent purification technology is not needed; and the method is simple in preparation technology, available in required materials, low in cost and applicable to large-scale industrial production. Therefore, the method is a simple and efficient method for preparing the silicon nitride nano ring.

Description

technical field [0001] The invention relates to a method for preparing a silicon nitride nanometer material, in particular to a method for synthesizing a silicon nitride nanometer ring by a CVD method. Background technique [0002] One-dimensional nanomaterials are ideal systems for studying physical properties such as electron transport behavior, optical properties, and mechanical properties. They play a very important role in the process of building integrated circuits and functional components such as nanoelectronics and optoelectronic devices. Research on the preparation, physical properties and applications of three-dimensional nanomaterials is extremely active. At present, people have prepared various forms of nanostructures in the fields of metals, oxides, semiconductors, and polymers, such as nanowires, nanobelts, nanorings, nanorods, nanosaws, nanotubes, nanorod arrays, and core-shells. Structural nanocables, etc., and studied their luminescence, electrical transpo...

Claims

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Application Information

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IPC IPC(8): C01B21/068B82Y30/00B82Y40/00
Inventor 杜红莉高爱舫
Owner 河北地质大学
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