Heat dissipating device for integrated water-cooling straight seal high-power electronic components and manufacturing method thereof
A technology for electronic components and cooling devices, which is applied in the field of integrated water-cooled direct-seal high-power electronic component cooling devices, can solve the problems of low thermal conductivity and achieve the effect of avoiding heat dissipation bottlenecks and good heat dissipation effects
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Embodiment 1
[0057] A method for manufacturing an integrated water-cooled directly-sealed heat sink for high-power electronic components, comprising the following steps:
[0058] Form an 80μm aluminum oxide insulating layer on one side of the aluminum heat sink by anodic oxidation, and then magnetron sputtering a buffer layer: tungsten and titanium alloy 300?, and then magnetron sputtering metal silver 750?, To achieve its electrical conductivity, 50 μm of copper is electroplated, and the conductive layer is thickened. The thermal conductivity of the test is 28W / m·K. Then stick a film on the surface of the metal copper plating, etch to obtain the required circuit; finally electroless nickel plating / immersion gold 10μm, the heat sink can be obtained.
Embodiment 2
[0060] A method for manufacturing an integrated water-cooled directly-sealed heat sink for high-power electronic components, comprising the following steps:
[0061]Form an 80μm aluminum oxide insulating layer on one side of the aluminum radiator by anodic oxidation, and then magnetron sputtering a layer of buffer layer: tungsten and titanium alloy 550?, and then magnetron sputtering metal silver 800?, to achieve It is conductive, then electroplated copper 60μm, thicken the conductive layer, and the thermal conductivity of the test is 25W / m·K. Then stick a film on the surface of the metal copper plating, etch to obtain the required circuit; finally electroless nickel plating / immersion gold 10μm, the heat sink can be obtained.
Embodiment 3
[0063] A method for manufacturing an integrated water-cooled directly-sealed heat sink for high-power electronic components, comprising the following steps:
[0064] A layer of 60μm aluminum oxide insulating layer is formed on one side of the aluminum heat sink by anodic oxidation method, and then a layer of 400 ? Then electroplate copper 100μm, thicken the conductive layer, and test the thermal conductivity to be 23W / m·K. Then stick a film on the surface of the metal copper plating, etch to obtain the required circuit; finally electroless tin plating of 15 μm, the heat sink can be obtained.
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