Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing crystalline silicon battery pieces through multistep gradient diffusion method

A crystalline silicon battery and gradient diffusion technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of battery conversion efficiency not being significantly improved, and the lifetime of minority carriers is low, so as to improve conductivity and reduce carrier life. Effects of life improvement and conversion efficiency improvement

Active Publication Date: 2013-10-09
九州方园新能源股份有限公司
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003]At present, the mainstream traditional diffusion process is one-step diffusion or two-step diffusion method. After diffusion, the minority carrier lifetime is relatively low, and the conversion efficiency of the battery cannot be significantly improved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing crystalline silicon battery pieces through multistep gradient diffusion method
  • Method for preparing crystalline silicon battery pieces through multistep gradient diffusion method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] A multi-step gradient diffusion method is used to prepare crystalline silicon cells, and the gradient diffusion method is used to do high-temperature phosphorus doping on the surface of P-type crystalline silicon to obtain N-type crystalline silicon and form a P-N junction, including the following steps,

[0017] 1) Pour 300 PCS of P-type crystalline silicon into the pre-set 800°C furnace tube, and at the same time, feed nitrogen at a rate of 17.8-18.2L / min, and keep warm for 600s;

[0018] 2) Raise the temperature in the furnace tube to 860°C in two steps. First, raise the temperature in the furnace from 800°C to 820°C. At the same time, nitrogen and oxygen are introduced. The nitrogen and oxygen are respectively 18.0L / min and 0.8L / min The speed is passed into the furnace for 250s; then the temperature is raised from 820°C to 860°C, and nitrogen and oxygen are passed into the furnace at the same time. The nitrogen and oxygen are respectively passed into the furnace at a...

Embodiment 2

[0025] A multi-step gradient diffusion method is used to prepare crystalline silicon cells, and the gradient diffusion method is used to do high-temperature phosphorus doping on the surface of P-type crystalline silicon to obtain N-type crystalline silicon and form a P-N junction, including the following steps,

[0026] 1) Pour 400PCS of P-type crystalline silicon into the pre-set 800°C furnace tube, and at the same time, feed nitrogen at a rate of 18L / min and keep it warm for 800s;

[0027] 2) Raise the temperature in the furnace tube to 860°C in two steps, first raise the temperature in the furnace from 800°C to 820°C, and at the same time feed nitrogen and oxygen, of which nitrogen and oxygen are respectively at a rate of 18L / min and 0.9L / min Pass it into the furnace for 300s; then raise the temperature from 820°C to 860°C, and feed nitrogen and oxygen at the same time, wherein nitrogen and oxygen are passed into the furnace at a rate of 18L / min and 0.9L / min respectively, T...

Embodiment 3

[0034] A multi-step gradient diffusion method is used to prepare crystalline silicon cells, and the gradient diffusion method is used to do high-temperature phosphorus doping on the surface of P-type crystalline silicon to obtain N-type crystalline silicon and form a P-N junction, including the following steps,

[0035] 1) Pour 500PCS of P-type crystalline silicon into the pre-set 800°C furnace tube, and at the same time, feed nitrogen at a rate of 18.2L / min, and keep it warm for 900s;

[0036] 2) Raise the temperature in the furnace tube to 860°C in two steps, first raise the temperature in the furnace from 800°C to 820°C, and at the same time feed nitrogen and oxygen, of which nitrogen and oxygen are respectively 18.6L / min and 1.0L / min The speed is passed into the furnace, and the feeding time is 350s; then the temperature is raised from 820°C to 860°C, and nitrogen and oxygen are passed in at the same time, of which nitrogen and oxygen are respectively passed into the furnac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the production technology of crystalline silicon battery pieces, in particular to the filed of crystalline silicon battery piece diffusion manufacturing procedures. A method for preparing the crystalline silicon battery pieces through a multistep gradient diffusion method specifically comprises the following steps: P type crystalline silicon is placed in a furnace tube at the preset temperature of 800 DEG C, then, nitrogen is blown into the furnace tube, and the temperature is kept constant for 600-900 seconds; the temperature inside the furnace tube is raised to 860 DEG C in two steps, and oxygen and the nitrogen are blown into the furnace tube at the same time; the temperature inside the furnace tube is kept constant at 860 DEG C, and the oxygen, the nitrogen and a phosphorus source are blown into the furnace tube at the same time; the temperature inside the furnace tube is gradually and slowly lowered to 852 DEG C, the phosphorus source, the oxygen and the nitrogen are blown into the furnace tube at the same time, and the time duration is 800 seconds; the temperature inside the furnace tube is directly lowered again to 800 DEG C, the oxygen and the nitrogen are blown into the furnace tube at the same time, and annealing is conducted after 300 seconds; after the annealing, the nitrogen is blown into the furnace tube, and a finished product is taken out of the furnace tube. Compared with the traditional technique, the method for preparing the crystalline silicon battery pieces through the multistep gradient diffusion method has increased the battery conversion rate by at least 0.25 percentage point.

Description

technical field [0001] The invention relates to a production technology of a crystalline silicon cell, in particular to the field of a diffusion process of a crystalline silicon cell. Background technique [0002] The production process of traditional solar cells includes: texturing, diffusion, etching, PSG removal, anti-reflection coating, screen printing, and sintering. [0003] At present, the mainstream traditional diffusion process is one-step diffusion or two-step diffusion method. After diffusion, the minority carrier lifetime is relatively low, and the conversion efficiency of the battery cannot be significantly improved. Contents of the invention [0004] The purpose of the present invention is to provide a multi-step gradient diffusion method for preparing crystalline silicon cells. The specific steps are: using the gradient diffusion method to do high-temperature phosphorus doping on the surface of P-type crystalline silicon to obtain N-type crystalline silicon ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/228
Inventor 傅强董道宴张崇超
Owner 九州方园新能源股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com