Preparation method for InN film low temperature sedimentation on diamond plated film by adopting ECR-PEMOCVD
A diamond film and low-temperature technology, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of difficult device cost reduction, high sapphire substrate price, hindering the development of InN material devices, etc. Effect of low, good electrical properties and heat dissipation performance
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Embodiment 1
[0038] After the Si substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes, it was blown dry with nitrogen and sent to the hot wire CVD reaction chamber; the hot wire CVD reaction chamber was evacuated to 1.0×10 -2 Pa, the substrate is heated to 800°C, and hydrogen and methane gas are introduced into the reaction chamber. The flow rate of the two is 200 sccm for hydrogen and 4 sccm for methane, controlled by a mass flow meter; the voltage of the hot wire is 10V, and the current of the filament is 50A. After reacting for 30 minutes, a diamond film was obtained on the Si substrate. Then put the diamond film substrate on Si into the ECR-PEMOCVD system deposition chamber, and vacuumize the ECR-PEMOCVD system reaction chamber to 8.0×10 -4 Pa, the substrate is heated to 300°C, trimethyl indium (TMIn), nitrogen (N 2 ), where TMIn and N 2 The flow ratio of the reaction source is controlled at 2:80, controlled by the flow rate of the mass flowm...
Embodiment 2
[0043] After the Si substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes, it was blown dry with nitrogen and sent to the hot wire CVD reaction chamber; the hot wire CVD reaction chamber was evacuated to 1.0×10-2 Pa, the substrate is heated to 800°C, and hydrogen and methane gas are introduced into the reaction chamber. The flow rate of the two is 200 sccm for hydrogen and 4 sccm for methane, controlled by a mass flow meter; the voltage of the hot wire is 10V, and the current of the filament is 50A. After reacting for 30 minutes, a diamond film was obtained on the Si substrate. Then put the diamond film substrate on Si into the ECR-PEMOCVD system deposition chamber, and vacuumize the ECR-PEMOCVD system reaction chamber to 8.0×10 -4 Pa, the substrate is heated to 400°C, trimethyl indium (TMIn), nitrogen (N 2 ), where TMIn and N 2 The flow ratio of the reaction source is controlled at 3:100, controlled by the flow rate of the mass flow m...
Embodiment 3
[0048] After the Si substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes, it was blown dry with nitrogen and sent to the hot wire CVD reaction chamber; the hot wire CVD reaction chamber was evacuated to 1.0×10 -2 Pa, the substrate is heated to 800°C, and hydrogen and methane gas are introduced into the reaction chamber. The flow rate of the two is 200 sccm for hydrogen and 4 sccm for methane, controlled by a mass flow meter; the voltage of the hot wire is 10V, and the current of the filament is 50A. After reacting for 30 minutes, a diamond film was obtained on the Si substrate. Then put the diamond film substrate on Si into the ECR-PEMOCVD system deposition chamber, and vacuumize the ECR-PEMOCVD system reaction chamber to 8.0×10 -4 Pa, the substrate is heated to 500°C, trimethyl indium (TMIn), nitrogen (N 2 ), where TMIn and N 2 The flow ratio of the reaction source is controlled at 3:90, controlled by the flow rate of the mass flow ...
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