Semiconductor device fan-out flip-chip packaging structure

Abstract

The invention discloses a semiconductor device fan-out flip-chip packaging structure comprising a chip. The chip is provided with electrodes; the chip and the electrodes are selectively coated with passivation layers; each electrode is provided with an insulation hollow cylindrical member; the surfaces of the insulation hollow cylindrical members and the surfaces of the electrodes which are in the insulation hollow cylindrical members, are provided with metal layers; first metal columns are arranged on the metal layers and in the insulation hollow cylindrical members; second metal columns are arranged on the first metal columns and the metal layers; and each second metal column is provided with a copper plate. The first metal columns in the insulation hollow cylindrical members can help to relieve stress at the joint point of a bump structure and the semiconductor chip, so that problems that electrode fracture is easily caused by uneven thermal expansion, and thus semiconductor device failure is caused are solved; the peripheral annular parts of the second metal columns contact the insulation hollow cylindrical members and then contact the semiconductor chip, so that stress from cylindrical bumps on the semiconductor chip is relieved.

Description

technical field [0001] The invention relates to the field of semiconductor device packaging, in particular to a semiconductor device fan-out flip-chip packaging structure. Background technique [0002] In recent years, under the joint promotion of cost reduction and front-end wafer manufacturing process improvement of semiconductor devices, the single chip size of semiconductor devices with the same function has become smaller and smaller, which will lead to the external connection on semiconductor devices The pitch between the electrodes is getting smaller and smaller, and the original columnar structure of the semiconductor device used for flip-chip soldering is likely to cause bridging between the electrodes, resulting in failure of the semiconductor device. At the same time, the current semiconductor devices have higher and higher requirements for avoiding the influence of α-ray radiation, the bonding strength between the bump and the flip-chip carrier, and the bonding s...

AI Technical Summary

Problems solved by technology

Although this flip-chip packaging structure meets the requirements of the flip-chip packaging structure structurally, it is easy to cause cracks in the bridging between electrodes, between bumps and flip-chip carriers, and at the junction of bumps and semiconductor chips. Causes the electrode to break, resulting in the failure of the semiconductor device

At the same time, the failure of the semiconductor device caused by the influence of alpha rays in the electroplated metal solder 212 on the circuit in the semiconductor chip 101 is not avoided to the greatest extent.

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