Rare bismuth semiconductor quantum well structure improved in heat stability and preparation method for rare bismuth semiconductor quantum well structure

Abstract

The invention relates to a rare bismuth semiconductor quantum well structure improved in heat stability and a preparation method for the rare bismuth semiconductor quantum well structure. A barrier layer of the quantum well structure contains a bismuth element. By taking a gallium-arsenic-bismuth (GaAsBi) quantum well as an example, the preparation method for the quantum well structure comprises the following steps of: (1) growing a GaAs buffer layer on a GaAs substrate; (2) growing an aluminum-gallium-arsenic-bismuth (AlGaAsBi) barrier layer; (3) growing a GaAsBi potential well layer; (4) continuously and repeatedly growing the AlGaAsBi barrier layer and the GaAsBi potential well layer of N-1 periods, wherein N is not less than 1 but not greater than 5; and (5) finally, growing AlGaAsBi barrier layer. The rare bismuth semiconductor quantum well structure disclosed by the invention is good in heat stability, can be grown by using various methods of conventional molecular beam epitaxy, atomic layer deposition and the like, is simple in operation process and is easy to control.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials and its preparation, in particular to a dilute bismuth semiconductor quantum well structure with improved thermal stability and a preparation method thereof. Background technique [0002] In recent years, dilute bismuth semiconductor materials have attracted more and more international attention because of their unique and important properties. It is found that the temperature dependence of the band gap of GaAsBi materials is much smaller than that of GaAs or InGaAsP materials. For GaAsBi materials with a bismuth composition in the range of 0.019-0.05, the temperature coefficient of the band gap is about 0.1-0.4meV / K, which is lower than 0.56meV of GaAs. / K. Due to the large atomic mass of bismuth, it is expected that bismuth compounds have a large spin-orbit splitting energy, which can suppress Auger recombination and increase the characteristic temperature of lasers. At th...

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Problems solved by technology

However, under the action of high temperature annealing, the bismuth atoms in the dilute bismuth semiconductor quantum well layer will diffuse to the barrier layer of the quantum well, resulting in a decrease in the bismuth element content in the quantum well layer. one of the major challenges of

[0004] Dilute bismuth semiconductor materials are a new research direction that has only emerged in recent years. The thermal stability of dilute bismuth semiconductor quantum wells has only recently been discovered and understood. At present, there is no structure and method to improve the thermal stability of dilute bismuth semiconductor quantum wells. learn from

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