Preparation method for bismuth titanate film layer on basis of micro-arc oxidation technology

Abstract

The invention discloses a preparation method for a bismuth titanate film layer on the basis of micro-arc oxidation technology. The preparation method comprises the following steps: a bismuth sheet and a platinum sheet which are the same in size are respectively used as an anode and a cathode; the bismuth sheet is burnished with several pieces of sand paper with different meshes and polished with a polishing paste, and the cleaning and oil removal of the bismuth sheet are performed sequentially via alcohol and acetone for standby; electrolyte with titanium concentration of 0.01-0.10 mol/L is prepared; the bismuth sheet keeps a distance of 1-3 cm from the platinum sheet, the bismuth sheet and the platinum sheet are vertically immersed into the electrolyte in a depth of 2-4 cm, magnetic agitation is started, and 1-5A constant current is electrified for 5-10 min; electric sparks are continuously generated on the surface of the bismuth sheet, a deposition layer is synchronously generated, and the bismuth sheet with the deposition layer is flushed with ion water and then dried at a temperature of 60 DEG C for 2 h, as a result, a bismuth titanate film layer is obtained. The bismuth titanate film layer preparation method is mild in synthesis conditions, can be completed under the conditions of normal temperature and normal pressure, and is quick in reaction speed and simple in operation steps; used bismuth is an environmental-friendly raw material, the process is safe, and no hazardous substance is leaked and discharged, so that environmental protection is facilitated.

Description

technical field [0001] The invention belongs to the technical field of electrochemical preparation, and in particular relates to a method for preparing a bismuth titanate film layer based on a micro-arc oxidation technology. Background technique [0002] Bismuth titanate compound is a kind of environment-friendly functional material, composed of TiO 2 and Bi 2 o 3 Complex formation, including Bi 4 Ti 3 o 12 、 Bi 2 Ti 2 o 7 、 Bi 12 TiO 20 、 Bi 20 TiO 32 isocrystalline phase, as one of them, Bi 12 TiO 20 The bandgap energy is small, and it belongs to broadband semiconductor, which has excellent photoelectric, fluorescent, magneto-optic, optical rotation and piezoelectric properties. Its thin film materials have broad application prospects in the field of optoelectronics, especially photocatalytic materials; [0003] At present, the preparation methods of bismuth titanate film layer mainly include the following two kinds: [0004] (1) Atomic Layer Deposition (ALD...

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Problems solved by technology

[0009] The purpose of the embodiments of the present invention is to provide a method for preparing bismuth titanate film based on micro-arc oxidation technology, aiming to solve the problem of high production cost and cumbersome preparation process of the existing technology for preparing

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