The invention discloses a preparation method for a
bismuth titanate film layer on the basis of micro-arc oxidation technology. The preparation method comprises the following steps: a
bismuth sheet and a
platinum sheet which are the same in size are respectively used as an
anode and a
cathode; the
bismuth sheet is burnished with several pieces of
sand paper with different meshes and polished with a
polishing paste, and the cleaning and oil removal of the bismuth sheet are performed sequentially via
alcohol and
acetone for standby;
electrolyte with
titanium concentration of 0.01-0.10 mol / L is prepared; the bismuth sheet keeps a distance of 1-3 cm from the
platinum sheet, the bismuth sheet and the
platinum sheet are vertically immersed into the
electrolyte in a depth of 2-4 cm, magnetic agitation is started, and 1-5A
constant current is electrified for 5-10 min; electric sparks are continuously generated on the surface of the bismuth sheet, a deposition layer is synchronously generated, and the bismuth sheet with the deposition layer is flushed with
ion water and then dried at a temperature of 60 DEG C for 2 h, as a result, a
bismuth titanate film layer is obtained. The
bismuth titanate film layer preparation method is mild in synthesis conditions, can be completed under the conditions of normal temperature and normal pressure, and is quick in
reaction speed and simple in operation steps; used bismuth is an environmental-friendly
raw material, the process is safe, and no
hazardous substance is leaked and discharged, so that
environmental protection is facilitated.