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Manufacturing method for GaN semiconductor LED chip

A technology of LED chips and LED epitaxial wafers, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as cumbersome procedures, high costs, and multiple procedures

Active Publication Date: 2013-12-04
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004]However, at present, growing GaN epitaxial chips on sapphire substrates to produce LEDs requires many procedures, so the procedures are cumbersome and the cost is high

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  • Manufacturing method for GaN semiconductor LED chip
  • Manufacturing method for GaN semiconductor LED chip
  • Manufacturing method for GaN semiconductor LED chip

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Embodiment Construction

[0036] Generally, the LED manufacturing process on GaN epitaxial materials using sapphire as a substrate mainly adopts the following methods:

[0037] First, grow a GaN epitaxial structure on a sapphire substrate, then etch the grown epitaxial wafer to etch a GaN mesa, and grow an ITO (tin-doped indium oxide) film on the GaN epitaxial wafer at room temperature . Next, high-temperature annealing is performed under an oxygen atmosphere to increase the conductivity and light transmittance of the ITO film. Then, electrode fabrication is completed to finally produce LED chips.

[0038] Figure 1A - Figure 1C , shows the process flow of manufacturing GaN epitaxial material LED chips using many processes. in, Figure 1A Shown is the situation of the n-type region formed after the first photolithography. Figure 1B It is the situation after the electrode holes of the p-type region are etched out after the second photolithography, and then the p / n-type region electrodes...

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Abstract

A manufacturing method for a GaN semiconductor LED chip comprises the following steps that an n-type GaN layer, a multiple-quantum well layer and a p-type GaN layer are grown on a sapphire substrate; indium tin oxide namely an ITO transparent electrode layer is grown; over etching is carried out on the ITO transparent electrode layer; dry etching is carried out from the p-type GaN layer to the n-type GaN layer, so that a mesa structure is formed; an SiO2 protective layer deposits on the ITO layer; a p-type electrode area and an n-type electrode area are formed by etching; a p-type electrode ohmic contact layer and a n-type electrode layer are respectively grown; the sapphire substrate is treated in a thinning, polishing, scribing and splitting mode. The manufacturing method for the GaN semiconductor LED chip is simple in process and low in cost.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a method for manufacturing a GaN semiconductor LED chip. Background technique [0002] The third-generation semiconductor material represented by GaN is a semiconductor material that has attracted much attention in recent years. It has a wide range of applications in white light LEDs, short-wavelength lasers, ultraviolet detectors, and high-temperature and high-power devices. [0003] However, due to the lack of natural GaN materials in nature, chips are currently mainly made by epitaxial heterogeneous growth of GaN on sapphire substrates. The main component of sapphire is aluminum oxide (Al 2 o 3 ), which has a wide optical penetration band, has good light transmission from near-ultraviolet light (190 nm) to mid-infrared light, and has high sound velocity, high temperature resistance, corrosion resistance, high hardness, high melting point, etc. features. These characteristi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 巴建锋余志炎王磊路鹏李国琪王强巩春梅
Owner WUXI CHINA RESOURCES HUAJING MICROELECTRONICS