Preparation method of low-temperature polysilicon thin film, thin film transistor and display device

Abstract

A method for manufacturing a low-temperature polycrystalline silicon thin film, a thin film transistor, and a display apparatus. The method for manufacturing a low-temperature polycrystalline silicon thin film comprises: depositing an amorphous silicon thin film on a substrate; covering an optical anti-reflection film on the amorphous silicon thin film; performing photoetching and etching on the optical anti-reflection film to enable a surface of the optical anti-reflection film to be of an array distributed light-condensing structure; and performing laser irradiation on the amorphous silicon thin film covered with the optical anti-reflection film, so as to convert the amorphous silicon thin film into the low-temperature polycrystalline silicon thin film. By using the foregoing method, the grain size and the uniformity of the low-temperature polycrystalline silicon thin film can be improved, and energy of incidence laser can be fully utilized, which helps to reduce the production cost of the low-temperature polycrystalline silicon thin film; and the performance of the low-temperature polycrystalline silicon thin film transistor is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for preparing a low-temperature polysilicon film, a thin film transistor and a display device. Background technique [0002] At present, commonly used active-matrix liquid crystal displays mostly use amorphous silicon thin film transistors and polysilicon thin film transistors. Among them, the polysilicon thin film transistor (Thin Film Transistor, referred to as TFT) has the advantages of high electron mobility, high aperture ratio, fast response speed, greatly reduced component size, high resolution, and the ability to make integrated drive circuits. , is more suitable for large-capacity high-frequency display, is conducive to improving the yield of the display and reducing the production cost, and is widely used. [0003] The excimer laser annealing method is commonly used to make low-temperature polysilicon thin films. The basic principle of this method is to use h...

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Problems solved by technology

[0004] However, in the prior art, it is difficult to realize the preparation of low-temperature polysilicon thin films with uniform and large-sized grains, and the incident laser light is largely reflected, which greatly wastes the energy of the incident laser light, which is not conducive to the realization of low-temperature polysilicon thin film production. Cost reduction is not conducive to improving the performance of low-temperature polysilicon thin film transistors

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