Internal optical extraction layer for OLED devices

A technology of light extraction layer and light-emitting device, which is applied in the manufacture of semiconductor devices, electric solid-state devices, semiconductor/solid-state devices, etc., and can solve the problems of reducing light emission of devices

Inactive Publication Date: 2014-01-15
ARKEMA FRANCE SA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the light emission of the device may be reduced due to the internal reflection of light in the different layers of the OLED

Method used

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  • Internal optical extraction layer for OLED devices
  • Internal optical extraction layer for OLED devices
  • Internal optical extraction layer for OLED devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0086] Unless otherwise indicated, all experiments were performed in air under ambient conditions.

[0087] TiO 2 Sol-Gel Synthesis

[0088] in TiO 2 In sol-gel synthesis, two types of templates based on ethylene oxide and propylene oxide are used block copolymers. Will F127 block copolymer (755mg, 0.06mmol) or P123 block copolymers (690 mg, 0.12 mmol or 345 mg, 0.06 mmol, each bifunctional block copolymer terminated with a primary hydroxyl group) were dissolved in 7.41 ml of n-butanol. The P123 block copolymer (at both concentrations) dissolved completely, but The F127 block copolymer produced a slightly opaque colloidal solution. Separately, 1.33 ml (16.1 mmol concentration) of HCl was slowly added under vigorous stirring to 1.93 ml (9.2 mmol) of tetraethoxytitanium, Ti(OEt) 4 in order to moderate any temperature increase from this exothermic reaction. Then in the process of 2-3 minutes at room temperature, the corresponding polymer solution was slowly pipetted...

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Abstract

A light-emitting device, which improves the light output of an organic light emitting diode (OLED), includes at least one porous metal or metalloid oxide light extraction layer positioned between the substrate and the transparent conducting material layer in the OLED. The index of refraction of the light extraction layer and the light scattering may be tuned by changing the pore size, pore density, doping the metal oxide, adding an insulating, conducting or semiconducting component, or filling the pores, for example. A method for forming the light-emitting device includes forming at least one light extraction layer comprising a porous metal or metalloid oxide on a substrate, for example, using atmospheric pressure chemical vapor deposition (APCVD), and subsequently, forming a transparent conducting material on the light extraction layer.

Description

[0001] Statement Regarding Federally Sponsored Research or Development [0002] This invention was developed in collaboration with Battelle Memorial Institute, Pacific Northwest National Laboratory (PNNL), Government Research Laboratories of the US Department of Energy (DOE). field of invention [0003] The present invention relates to light-emitting devices, such as organic light-emitting diodes (OLEDs), having at least one light extraction layer, and to methods for their manufacture. Background of the invention [0004] Light emitting diodes (LEDs) are known and used in many applications, such as in displays and status indicators. LEDs can be formed from organic and / or inorganic materials. Inorganic LEDs include a phosphor, typically an inorganic semiconductor material, such as gallium arsenide, for the light emitting layer. Organic LEDs (OLEDs) typically include an organic material for the light emitting layer and charge transport. Inorganic LEDs can provide bright and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
CPCH10K50/854H10K50/858
Inventor G·S·西尔弗曼R·Y·科罗特科夫R·C·史密斯J·刘D·J·加斯帕A·B·帕德梅普鲁马王亮B·施温茨J·S·史文森
Owner ARKEMA FRANCE SA
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