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A kind of titanium niobate or niobate epitaxial thin film and its preparation method and application

A technology of niobium ferrite and epitaxial thin film, which is applied in the field of dielectric materials, can solve problems such as application constraints of components, and achieve the effects of small fluctuations in dielectric properties, simple manufacturing process, and good thermal performance stability

Active Publication Date: 2016-04-27
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the materials used in traditional Zener diodes are mainly organic, which restricts the application of components in some special environments

Method used

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  • A kind of titanium niobate or niobate epitaxial thin film and its preparation method and application
  • A kind of titanium niobate or niobate epitaxial thin film and its preparation method and application
  • A kind of titanium niobate or niobate epitaxial thin film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Using the method of radio frequency magnetron sputtering, through the magnetron sputtering apparatus, polycrystalline Ca (Fe, Nb) 0.05 Ti 0.9 o 3 As the target, the sputtering oxygen pressure is 2.1mbar, and the sputtering temperature is 750°C, on Nd-doped SrTiO 3 (100) Epitaxial growth of Ca(Fe,Nb) on single crystal substrate 0.05 Ti 0.9 o 3 The film is naturally cooled to room temperature under 2mbar oxygen pressure after sputtering to obtain a titanium niobate ferrite or niobate epitaxial film.

[0036] Wherein, the preparation method of the target comprises the following steps:

[0037] 1) CaCO 3 、TiO 2 Mix at a molar ratio of 1:1, use absolute ethanol as a solvent, and undergo wet ball milling for 4 hours to obtain sample A;

[0038] CaCO 3 , Nb 2 o 5 , Fe 3 o 4 Mixed at a molar ratio of 50:12.5:8.3, using absolute ethanol as a solvent, and subjected to wet ball milling for 4 hours, to obtain sample B; wherein, CaCO 3 、TiO 2 , Nb 2 o 5 and Fe 3 o ...

Embodiment 2

[0043] Utilize the method of radio frequency magnetron sputtering, through the magnetron sputtering apparatus, with Ca(Fe,Nb) 0.15 Ti 0.7 o 3 Polycrystalline as the target material, the sputtering oxygen pressure is 1.8mbar, and the sputtering temperature is 600°C, on Nd-doped SrTiO 3 (100) Epitaxial growth of Ca(Fe,Nb) on single crystal substrate 0.15 Ti 0.7 o 3 After sputtering, the thin film is naturally cooled to room temperature under 2mbar oxygen pressure to obtain titanium calcium niobate ferrite epitaxial thin film.

[0044] Wherein, the preparation method of the target comprises the following steps:

[0045] 1) CaCO 3 、TiO 2 Mix at a molar ratio of 1:1, use absolute ethanol as a solvent, and undergo wet ball milling for 5 hours to obtain sample A;

[0046] CaCO 3 , Nb 2 o 5 , Fe 3 o 4 Mixed at a molar ratio of 50:12.5:8.3, using absolute ethanol as a solvent, and subjected to wet ball milling for 4 hours, to obtain sample B; wherein, CaCO 3 、TiO 2 , Nb ...

Embodiment 3

[0051] Utilize the method of radio frequency magnetron sputtering, through the magnetron sputtering apparatus, with Ca(Fe,Nb) 0.25 Ti 0.5 o 3 Polycrystalline as the target material, the sputtering oxygen pressure is 5mbar, and the sputtering temperature is 745°C, on Nd-doped SrTiO 3 (100) Epitaxial growth of Ca(Fe,Nb) on single crystal substrate 0.25 Ti 0.5 o 3 After sputtering, the thin film is naturally cooled to room temperature under 2mbar oxygen pressure to obtain titanium calcium niobate ferrite epitaxial thin film.

[0052] Wherein, the preparation method of the target comprises the following steps:

[0053] 1) CaCO 3 、TiO 2 Mix at a molar ratio of 1:1, use absolute ethanol as a solvent, and undergo wet ball milling for 6 hours to obtain sample A;

[0054] CaCO 3 , Nb 2 o 5 , Fe 3 o 4 Mixed at a molar ratio of 50:12.5:8.3, using absolute ethanol as a solvent, and subjected to wet ball milling for 5 hours to obtain sample B; wherein, CaCO 3 、TiO 2 , Nb 2 ...

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Abstract

Provided are a ferrite niobate titanate or ferrite niobate epitaxial thin film, and a preparation method and an application thereof. The epitaxial thin film is composed of a Ca(Fe,Nb)(1-x) / 2TixO3 thin film epitaxially grown on a monocrystalline substrate, wherein 0<=x<1. The preparation method comprises the steps: utilizing a radio frequency magnetron sputtering method; with a Ca(Fe,Nb)(1-x) / 2TixO3 polycrystalline as a target, at the temperature of 600-800 DEG C and under an oxygen pressure of 1-5 mbar, carrying out epitaxial growth of the Ca(Fe,Nb)(1-x) / 2TixO3 thin film on the monocrystalline substrate, after sputtering, naturally cooling to the room temperature to obtain the calcium ferrite niobate titanate epitaxial thin film. The preparation process is simple, the preparation course has no pollution to the environment, and the prepared epitaxial thin film has small dielectric property fluctuation and good stability of thermal property under a low frequency, and can be applied in preparation of microwave components, Zener diodes and other precision components having higher requirements on the temperature and the humidity.

Description

technical field [0001] The invention relates to a dielectric material used in a communication system, in particular to a titanium niobate ferrite or niobate ferrite epitaxial film and its preparation method and application. Background technique [0002] Dielectric materials can be used in circuits of multiple frequency bands. As dielectric materials and materials that perform one or more functions, they are widely used as elements such as resonators, filters, dielectric substrates, and dielectric waveguide circuits in modern applications. device. Since the unit size of a dielectric resonator is inversely proportional to the square root of the dielectric constant of the material used, the larger the dielectric constant, the more conducive to the miniaturization of the device. Medium and low dielectric constant dielectric ceramics can be used in radar and communication technology. As a candidate material for low dielectric constant in VLSI, fluorinated amorphous carbon (a-C:...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/08C30B29/22
Inventor 汪宏曾一
Owner XI AN JIAOTONG UNIV