Non-punch-through type insulated gate bipolar transistor with side polysilicon electrode trench

Abstract

The invention discloses a non-punch-through type insulated gate bipolar transistor with a side polysilicon electrode trench, and relates to a bipolar transistor. The non-punch-through type insulated gate bipolar transistor is provided with a metalized collector electrode, a P type collector electrode region, an N- type drift region, a silicon dioxide side polysilicon oxide layer, a side polysilicon electrode, a metalized side polysilicon electrode, a P+ type body region, a metalized emitter electrode, an N+ type source region, a P type base region, a metalized gate electrode, a polysilicon gate electrode and a silicon dioxide gate oxide layer. A side polysilicon electrode technology is introduced in a traditional non-punch-through type insulated gate bipolar transistor with a trench; a mask plate does not need to be arranged and the junction depth of an original P+ type body region is expanded to be connected with the N- type drift region; a positive voltage is applied to Side-poly (the side polysilicon electrode trench), so that a reverse electric field can be generated, the shortcoming of electric field accumulation due to small bottom curve rate of the trench in Trench-NPT-IGBT (the non-punch-through type insulated gate bipolar transistor with the side polysilicon electrode trench) is overcome, and the peak electric field at the bottom of a trench gate is effectively reduced. Therefore, the non-punch-through type insulated gate bipolar transistor has the characteristics of higher breakdown voltage and lower threshold voltage.

Description

technical field [0001] The invention relates to a bipolar transistor, in particular to a non-penetrating insulated gate bipolar transistor with side polysilicon electrode trenches. Background technique [0002] Insulated gate bipolar transistor (IGBT) not only has the advantages of high input impedance of MOSFET, low driving power, low switching loss, but also high current density and low saturation voltage of bipolar power transistor. As a new type of power semiconductor device, it is widely used in the field of power electronics. However, since the IGBT is designed with trench gate technology, the electric field is easy to concentrate at the bottom of the trench gate due to the small surface ratio at the bottom of the trench, which limits the breakdown voltage of the trench gate type insulated gate field effect transistor. [0003] Literature [1] "Dual-Material-Gate Technique for Enhanced Transconductance and Breakdown Voltage of Trench Power MOSFETs" (Author: Raghvendra ...

AI Technical Summary

Problems solved by technology

This kind of structure has high process difficulty and cost, and poor dynamic avalanche capability

Literature [3] realizes the process of P region requires multi-step ion implantation, and the effect is not good in improving the breakdown voltage

Images