Annealing process for growing large-size sapphire crystal by kyropoulos method
A technology of sapphire crystal and annealing process, which is applied in the field of annealing process for growing large-size sapphire crystal by bubble growth, can solve problems such as lattice distortion and poor optical uniformity, and achieves elimination of crystal internal stress, short annealing time, and improvement of crystal quality. and utilization effect
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Embodiment 1
[0023] An annealing process for growing large-sized sapphire crystals by the Kyropoulos method. After the growth of large-sized sapphire crystals by the Kyropoulos method is completed, the vacuum in the single crystal furnace is maintained, and the power of the heater is gradually reduced. The cooling is divided into five stages until the heater power is zero;
[0024] The first stage: reduce the power of the heater, lower the temperature at a rate of 15 °C / h to 1800 °C in the single crystal furnace, keep it warm for 6 hours, and rotate the sapphire crystal at a speed of 0.5 rpm;
[0025] The second stage: reduce the power of the heater, lower the temperature at a rate of 20 °C / h to 1500 °C in the single crystal furnace, keep it warm for 4 hours, and rotate the sapphire crystal at a speed of 1.1 rpm;
[0026] The third stage: reduce the power of the heater, lower the temperature at a rate of 20°C / h to 1150°C in the single crystal furnace, keep it warm for 2 hours, and rota...
Embodiment 2
[0031] An annealing process for growing large-sized sapphire crystals by the Kyropoulos method. After the growth of large-sized sapphire crystals by the Kyropoulos method is completed, the vacuum in the single crystal furnace is maintained, and the power of the heater is gradually reduced. The cooling is divided into five stages until the heater power is zero;
[0032] The first stage: reduce the power of the heater, lower the temperature at a rate of 18°C / h to 1800°C in the single crystal furnace, keep it warm for 7 hours, and rotate the sapphire crystal at a speed of 0.8rpm;
[0033] The second stage: reduce the power of the heater, lower the temperature at a rate of 22 °C / h to 1500 °C in the single crystal furnace, keep it warm for 5 hours, and rotate the sapphire crystal at a speed of 1.3 rpm;
[0034] The third stage: reduce the power of the heater, lower the temperature at a rate of 22 °C / h to 1150 °C in the single crystal furnace, keep it warm for 3 hours, and rotat...
Embodiment 3
[0039] An annealing process for growing large-sized sapphire crystals by the Kyropoulos method. After the growth of large-sized sapphire crystals by the Kyropoulos method is completed, the vacuum in the single crystal furnace is maintained, and the power of the heater is gradually reduced. The cooling is divided into five stages until the heater power is zero;
[0040] The first stage: reduce the power of the heater, lower the temperature at a rate of 20°C / h to 1800°C in the single crystal furnace, keep it warm for 8 hours, and rotate the sapphire crystal at a speed of 1rpm;
[0041] The second stage: reduce the power of the heater, lower the temperature at a rate of 25 °C / h to 1500 °C in the single crystal furnace, keep it warm for 6 hours, and rotate the sapphire crystal at a speed of 1.5 rpm;
[0042] The third stage: reduce the power of the heater, lower the temperature at a rate of 25 °C / h to 1150 °C in the single crystal furnace, keep it warm for 4 hours, and rotate ...
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