Annealing process for growing large-size sapphire crystal by kyropoulos method

A technology of sapphire crystal and annealing process, which is applied in the field of annealing process for growing large-size sapphire crystal by bubble growth, can solve problems such as lattice distortion and poor optical uniformity, and achieves elimination of crystal internal stress, short annealing time, and improvement of crystal quality. and utilization effect

Inactive Publication Date: 2014-01-29
江西东海蓝玉光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method to effectively reduce the internal stress of large-sized sapphire crystals in order to solve the defects of a large amount of internal stress in the crystal, serious lattice distortion and poor optical uniformity during the cooling process of the existing sapphire crystals, reducing the Crystal defects, improving crystal quality, shortening crystal growth cycle, and reducing production costs Annealing process for large-sized sapphire crystals grown by Kyropoulos method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] An annealing process for growing large-sized sapphire crystals by the Kyropoulos method. After the growth of large-sized sapphire crystals by the Kyropoulos method is completed, the vacuum in the single crystal furnace is maintained, and the power of the heater is gradually reduced. The cooling is divided into five stages until the heater power is zero;

[0024] The first stage: reduce the power of the heater, lower the temperature at a rate of 15 °C / h to 1800 °C in the single crystal furnace, keep it warm for 6 hours, and rotate the sapphire crystal at a speed of 0.5 rpm;

[0025] The second stage: reduce the power of the heater, lower the temperature at a rate of 20 °C / h to 1500 °C in the single crystal furnace, keep it warm for 4 hours, and rotate the sapphire crystal at a speed of 1.1 rpm;

[0026] The third stage: reduce the power of the heater, lower the temperature at a rate of 20°C / h to 1150°C in the single crystal furnace, keep it warm for 2 hours, and rota...

Embodiment 2

[0031] An annealing process for growing large-sized sapphire crystals by the Kyropoulos method. After the growth of large-sized sapphire crystals by the Kyropoulos method is completed, the vacuum in the single crystal furnace is maintained, and the power of the heater is gradually reduced. The cooling is divided into five stages until the heater power is zero;

[0032] The first stage: reduce the power of the heater, lower the temperature at a rate of 18°C / h to 1800°C in the single crystal furnace, keep it warm for 7 hours, and rotate the sapphire crystal at a speed of 0.8rpm;

[0033] The second stage: reduce the power of the heater, lower the temperature at a rate of 22 °C / h to 1500 °C in the single crystal furnace, keep it warm for 5 hours, and rotate the sapphire crystal at a speed of 1.3 rpm;

[0034] The third stage: reduce the power of the heater, lower the temperature at a rate of 22 °C / h to 1150 °C in the single crystal furnace, keep it warm for 3 hours, and rotat...

Embodiment 3

[0039] An annealing process for growing large-sized sapphire crystals by the Kyropoulos method. After the growth of large-sized sapphire crystals by the Kyropoulos method is completed, the vacuum in the single crystal furnace is maintained, and the power of the heater is gradually reduced. The cooling is divided into five stages until the heater power is zero;

[0040] The first stage: reduce the power of the heater, lower the temperature at a rate of 20°C / h to 1800°C in the single crystal furnace, keep it warm for 8 hours, and rotate the sapphire crystal at a speed of 1rpm;

[0041] The second stage: reduce the power of the heater, lower the temperature at a rate of 25 °C / h to 1500 °C in the single crystal furnace, keep it warm for 6 hours, and rotate the sapphire crystal at a speed of 1.5 rpm;

[0042] The third stage: reduce the power of the heater, lower the temperature at a rate of 25 °C / h to 1150 °C in the single crystal furnace, keep it warm for 4 hours, and rotate ...

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Abstract

The invention relates to an annealing process for growing a large-size sapphire crystal by a kyropoulos method. After a large-size sapphire crystal grows by a kyropoulos method, the vacuum degree in a single crystal furnace is maintained, the heater power is gradually reduced, and the cooling is performed in five stages until the heater power is zero; through staged thermal insulation annealing, the dislocation density of large-size sapphire can be effectively reduced, internal stress of the crystal is eliminated, and the quality and the utilization rate of the crystal are improved; the annealing time is short, the energy consumption is reduced, and the growth period of the large-size sapphire crystal is shortened; moreover, the sapphire crystal is rotated in a thermal insulation stage so that the sapphire crystal annealing is uniform and the influence of non-uniform temperature field in annealing is eliminated.

Description

technical field [0001] The invention relates to the technical field of processing crystal materials, in particular to an annealing process for growing large-sized sapphire crystals by the Kyropoulos method, which reduces production costs. [0002] Background technique [0003] Sapphire, also known as white sapphire, is the crystal material whose hardness is second only to diamond in the world. Due to its excellent physical, mechanical, chemical and infrared light transmission properties, it has always been an urgently needed material in the fields of microelectronics, aerospace, military industry, etc., especially Optical-grade large-size sapphire material has the characteristics of stable performance, large market demand, comprehensive utilization rate and high added value of products. At present, the relatively mature product in the industry is 35kg grade sapphire grown by the Kyropoulos method, which is mainly used for optical and LED substrates. However, due to reasons...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B17/00C30B29/20C30B33/02
Inventor 熊亮亮曾锡强
Owner 江西东海蓝玉光电科技有限公司
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