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High-sensitivity gas sensor based on microchannel plate three-dimensional structure and production method of high-density gas sensor

A gas sensor, micro-channel plate technology, applied in the direction of material resistance, can solve problems such as structural reliability and stability are difficult to guarantee

Active Publication Date: 2014-01-29
EAST CHINA NORMAL UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the above-mentioned nanostructure is only realized on a planar structure, not only the structural reliability and stability are difficult to guarantee, but also the specific surface area of ​​the disordered nanofibrous structure on the effective resistance between the two measuring electrodes is very large. limited
Other research groups have also tried to increase the specific surface area of ​​the device by preparing a hollow or porous gas-sensitive film. This is a promising method, but there is still a problem of how to let the external gas The problem of quickly and smoothly entering the void inside the film, and the improvement of the effective specific surface area is still a difficulty

Method used

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  • High-sensitivity gas sensor based on microchannel plate three-dimensional structure and production method of high-density gas sensor
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  • High-sensitivity gas sensor based on microchannel plate three-dimensional structure and production method of high-density gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] If in the detection module, the microchannel plate of glass material is used as the framework material, there is no need to prepare the side wall insulating layer 11, the material of the gas-sensitive film is tin dioxide, and the upper and lower electrodes are metal platinum. The heating module part, from bottom to top is Al 2 o 3 Ceramic sheet, metal platinum heating resistance coil, silicon nitride insulating film. The specific production process is as follows:

[0083] (1) Fabricate a microchannel plate on a glass material, each microchannel has a side length of 5 microns x 5 microns, a depth of 250 microns, and a side wall thickness of 1 micron. After laser cutting, a disc with a diameter of 3 mm is obtained;

[0084] (2) Deposit 0.5 micron tin dioxide gas-sensitive film material on the side wall of the microchannel by sol-gel method;

[0085] (3) Using the magnetron sputtering method, 0.3 micron metal platinum electrodes were deposited on the upper and lower si...

Embodiment 2

[0098] For the detection module part, the three-dimensional structure of the microchannel plate is made of silicon material, the side wall insulating layer is silicon dioxide, the material of the gas-sensitive film is tin dioxide, and the upper and lower electrodes are metal platinum. The heating module part, from bottom to top is Al 2 o 3 Ceramic sheet, metal platinum heating resistance coil, silicon nitride insulating film. The specific production process is as follows:

[0099] (1) Using the method provided by the patent 201110196442.4, and using the device provided by the patent application 201120406111.4, a silicon microchannel plate was fabricated on a 4-inch silicon wafer. Each microchannel has a side length of 5 microns x 5 microns, a depth of 250 microns, a side Wall thickness 1 micron. After laser cutting, a disc with a diameter of 3 mm is obtained;

[0100] (2) Using the method provided by patent 201210402277.8, thermally oxidize the silicon microchannel plate t...

Embodiment 3

[0115] If in the detection module part, the three-dimensional structure of the microchannel plate is made of silicon material, such as the microchannel plate is first thermally oxidized and then laser cut, the device structure is the same as that described in method 2, and the specific manufacturing process is as follows:

[0116] (1) Using the method provided by the patent 201110196442.4, and using the device provided by the patent application 201120406111.4, a silicon microchannel plate was fabricated on a 4-inch silicon wafer. Each microchannel has a side length of 5 microns x 5 microns, a depth of 250 microns, a side Wall thickness 1 micron;

[0117] (2) Using the method provided by patent 201210402277.8, thermally oxidize the silicon microchannel plate to obtain a 0.5 micron silicon dioxide sidewall insulating layer;

[0118] (3) Deposit 0.5 micron tin dioxide gas-sensitive film material on the side wall of the microchannel by sol-gel method;

[0119] (4) Using the metho...

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Abstract

The invention discloses a high-sensitivity gas sensor based on a microchannel plate three-dimensional structure and a production method of the high-sensitivity gas sensor. The high-sensitivity gas sensor consists of a detection module and a heating module; the detection module is bonded with the heating module through an electrically-conductive sizing agent; the detection module and the heating module are respectively provided with two lead leading-out electrodes, i.e. a detection electrode and a heating electrode, the detection module and the heating module are packaged inside a packaging tube shell, and the packaging tube shell is provided with at least four electrodes; the detection module is sequentially formed by an upper electrode, a microchannel plate and a lower electrode from top to bottom; the heating module is sequentially formed by a heat insulation substrate, a heating resistance coil and an insulation film from bottom to top. The high-sensitivity gas sensor has the beneficial effects that the effective specific surface area of a gas-sensitivity film can be improved, so that the sensitivity of the gas sensor can be improved; the porous structure of the microchannel plate favors the successful passing of detected gas, so that the test sensitivity and reaction speed of a device can be improved.

Description

technical field [0001] The invention relates to a high-sensitivity gas sensor, in particular to the structural design, device preparation and system construction of a high-sensitivity gas sensor based on the three-dimensional structure of a microchannel plate, belonging to the field of semiconductor devices. Background technique [0002] With the vigorous development of industrial and agricultural production, the continuous improvement of people's living standards and the increasing emphasis on environmental protection, the detection of various toxic and harmful gases, the monitoring of air pollution, industrial waste gas, and the detection of food and living environment quality are all important. Higher requirements are placed on gas sensors. The successful application of new material development technologies such as micromachining technology, nanometer and thin film provides a good prerequisite for the miniaturization, integration and intelligence of gas sensors. Gas sens...

Claims

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Application Information

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IPC IPC(8): G01N27/12
Inventor 朱一平王连卫
Owner EAST CHINA NORMAL UNIV
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