A high-power crimping igbt package module

A packaging module and crimping technology, which is applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of no breakthrough changes in the selection of new structural materials, limit the power range of devices, and restrict the development of devices, etc., to achieve anti-oxidation performance Excellent, easy to manufacture and assemble, simple and compact structure
CN103545269BActive Publication Date: 2016-08-10STATE GRID CORP OF CHINA +2
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
STATE GRID CORP OF CHINA
Publication Date
2016-08-10

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Abstract

The invention relates to the technical field of microelectronic packaging, in particular to a high-power crimping type IGBT packaging module. Upper cover, sub-module, gate pin, lower base, the upper cover is covered on the lower base, the sub-module is set between the upper cover and the lower base, and the gate pin is set in the groove of the insulating bottom plate in the lower base Inside. The sub-module includes a top molybdenum sheet, a chip, a bottom molybdenum sheet, a conductive silver sheet and a PBI high-performance plastic frame, and the top molybdenum sheet, a chip, a bottom molybdenum sheet and a conductive silver sheet in the groove surface of the PBI high-performance plastic frame Pressing sequentially from top to bottom, the upper surface of the top molybdenum sheet is in electrode contact with the lower surface of the upper cover, and the lower surface of the conductive silver sheet in the sub-module is crimped with the upper surface of the boss in the lower base. The invention has the advantages of simpler manufacture and assembly, better connection reliability, better heat dissipation performance and the like.
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Description

technical field

[0001] The invention relates to the technical field of microelectronic packaging, in particular to a high-power crimping type IGBT packaging module Background technique

[0002] Insulated gate bipolar transistor (IGBT) combines the gate voltage control characteristics of MOSFET and the low on-resistance characteristics of BJT, and has the characteristics of large input impedance, low driving power, low switching loss, operating frequency, high voltage, and high current. , is an almost ideal semiconductor high-power switching device with broad development and application prospects. , rail transit, aviation, ships, marine engineering and other fields.

[0003] Nowadays, IGBT, as a mainstream device in the world, has developed to the fifth generation of commercialization, and the packaging method of IGBT has also been diversified. At present, the module structure of high-performance plastic shell is the most common way. In this structure, the IGBT chip is welde...

Claims

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