Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultraviolet light-emitting diode promoting growth of plants

A technology that promotes plant growth and light-emitting diodes, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as unfavorable plant growth, achieve the effects of improving luminous efficiency, reducing damage, and enhancing luminous intensity

Inactive Publication Date: 2014-02-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, the high-purity inorganic nano-luminescent materials based on these materials emit near-ultraviolet light under the excitation of ultraviolet light, which is not conducive to the growth of plants.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet light-emitting diode promoting growth of plants
  • Ultraviolet light-emitting diode promoting growth of plants
  • Ultraviolet light-emitting diode promoting growth of plants

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Such as figure 2 , 3 The schematic diagram of the use of the phosphor powder shown in the figure uses the ultraviolet light-emitting diode chip 2 as the excitation light source, and the luminescent layer 3 on the ultraviolet light-emitting diode chip is doped with chlorophosphate blue phosphor [Ca 5 (PO 4 ) 3 Cl / Eu], nitride red phosphor [Sr 2 Si 5 N 8 / Eu], the molar ratio of the blue phosphor to the red phosphor is 1.5:1, the high-purity inorganic nano-luminescent material adopts zinc oxide nanoflowers, and the total molar ratio of the light-emitting layer 3 on the ultraviolet light-emitting diode chip The ratio is 1:10. The inorganic nanopowder is made of zinc oxide nanoparticles with a particle size of 150 nm, and its mass ratio in the encapsulation layer 4 is 10%.

Embodiment 2

[0035] Such as figure 2 , 3 The schematic diagram of the use of the phosphor powder shown in the figure uses the ultraviolet light-emitting diode chip 2 as the excitation light source, and the luminescent layer 3 on the ultraviolet light-emitting diode chip is doped with chlorophosphate blue phosphor [Ca 5 (PO 4 ) 3 Cl / Eu], nitride red phosphor [CaAlSiN 3 / Eu], the molar ratio of the blue phosphor to the red phosphor is 1.8:1, the high-purity inorganic nano-luminescent material adopts zinc oxide nanoflowers, and the total molar ratio of the light-emitting layer 3 on the ultraviolet light-emitting diode chip The ratio is 1:10. The inorganic nanopowder is made of zinc oxide nanoparticles with a particle size of 150 nm, and its mass ratio in the encapsulation layer 4 is 10%.

Embodiment 3

[0037] Such as figure 2 , 3The schematic diagram of the use of the phosphor powder shown in the figure uses an ultraviolet light-emitting diode chip 2 as an excitation light source, and the luminescent layer 3 on the ultraviolet light-emitting diode chip is doped with chlorophosphate blue phosphor [Ba 5 (PO 4 ) 3 Cl / Eu], nitride red phosphor [SrAlSiN 3 / Eu], the molar ratio of the blue phosphor to the red phosphor is 2.1:1, the high-purity inorganic nano-luminescent material adopts zinc oxide nanoflowers, and the total molar ratio of the light-emitting layer 3 on the ultraviolet light-emitting diode chip The ratio is 1:10. The inorganic nanopowder is made of zinc oxide nanoparticles with a particle size of 150 nm, and its mass ratio in the encapsulation layer 4 is 10%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An ultraviolet light-emitting diode promoting growth of plants comprises a base, an ultraviolet light-emitting diode chip, a light-emitting layer and a packaging layer, wherein the light-emitting layer and the packaging layer are arranged on the ultraviolet light-emitting diode chip. The light-emitting layer on the ultraviolet light-emitting diode chip is formed by mixing high-purity inorganic nano light-emitting materials, rare earth blue fluorescent powder and rare earth red fluorescent powder. The packaging layer is formed by mixing packaging glue and inorganic nano powder and applied to the light-emitting layer of the ultraviolet light-emitting diode chip. Because an ultraviolet light source serves as an exciting source body of the light-emitting layer on the ultraviolet light-emitting diode chip, light emitting strength can be effectively improved, light emitting efficiency can be improved, the high-purity inorganic nano light-emitting materials, the rare earth blue fluorescent powder and the rare earth red fluorescent powder can be excited, and light can be more sufficiently and evenly emitted. Because the inorganic nano powder with the ultraviolet shielding ability is mixed in the packaging layer, redundant ultraviolet can be absorbed, large-wavelength blue light can be emitted, and the ultraviolet is effectively shielded and the plants are less damaged on the premise that red light and blue light pass.

Description

technical field [0001] The invention relates to a light-emitting diode, in particular to an ultraviolet light-emitting diode for promoting plant growth. Background technique [0002] In recent years, artificial light sources have been more and more widely used in plant cultivation. Studies have found that chlorophyll and carotenoids have the largest absorption ratio of 400-520 nm blue light, and 610-720 nm red light has the greatest contribution to plant photosynthesis, especially blue light with a wavelength range of 500-600 nm and 600-700 nm Red light is the wavelength band that maximizes photosynthesis efficiency. [0003] Incandescent lamps, fluorescent lamps, and high-pressure sodium lamps are commonly used artificial light sources for plant cultivation. However, they all have certain imperfections, which limit their wide-scale application. Specifically, the luminous efficiency of incandescent lamps is not high, and it will generate a lot of heat when irradiating plan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50H01L33/56
CPCH01L33/504H01L33/56
Inventor 于军胜王煦韩世蛟王晓
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com