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Preparation method of Cu-Im-Ga-Se quaternary semiconductor alloy

A copper indium gallium selenide and semiconductor technology, which is applied in the field of alloys, can solve the problems of high safety requirements, high energy consumption, long preparation period and the like, and achieves the effects of mild reaction conditions, low preparation cost and simple operation.

Inactive Publication Date: 2014-02-12
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the preparation of copper indium gallium selenide by the selenization method can obtain relatively good copper indium gallium selenide thin films, the preparation cycle of this method is long, the energy consumption is high, and the selenium vapor is highly toxic, so the safety requirements are high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Weigh 570 grams of copper metal, 805 grams of indium metal, and 210 grams of gallium metal, put them into a quartz crucible, evacuate the vacuum induction furnace, and then pass in argon gas. The vacuum degree of the induction furnace is 20-30mmHg, and then gradually increase the temperature At 500°C, copper, indium, and gallium are gradually melted, and then the temperature is raised to 1000°C, smelted for 10 minutes, and cooled with the furnace to obtain a copper-indium-gallium ternary alloy.

[0025] Put 1583 grams of refined copper indium gallium ternary alloy and 1800 grams of selenium powder into both ends of the quartz tube respectively, vacuumize and seal the quartz tube. Use a tube furnace to slowly heat the quartz tube at one end of the copper indium gallium from room temperature to 900 °C; at the same time, use a tube furnace to heat the part of the quartz tube with selenium at the other end from room temperature to 300 °C and keep it for 20 minutes; Heat at ...

Embodiment 2

[0028] Weigh 450 grams of metal copper, 390 grams of metal indium, and 130 grams of metal gallium, put them into a quartz crucible, evacuate the vacuum induction furnace, and then pass in argon, the vacuum degree of the induction furnace is 20-30mmHg, and then gradually increase the temperature At 700°C, copper, indium, and gallium are gradually melted, and then the temperature is raised to 900°C, smelted for 10 minutes, and cooled with the furnace to obtain a copper-indium-gallium ternary alloy.

[0029] Put 969 grams of refined copper indium gallium ternary alloy and 1200 grams of selenium powder into both ends of the quartz tube, vacuumize, and seal the quartz tube. Use a tube furnace to slowly heat the quartz tube at one end of the copper indium gallium from room temperature to 900 °C; use a tube furnace to heat the part of the quartz tube with selenium at the other end from room temperature to 300 °C and keep it warm for 1 min; 300 ℃ to 500℃ for 1 hour; 500℃ to 750℃. Whe...

Embodiment 3

[0032] Weigh 570 grams of metal copper, 575 grams of metal indium, and 350 grams of metal gallium, put them into a quartz crucible, evacuate the vacuum induction furnace, and then pass in argon gas. The vacuum degree of the induction furnace is 20-30mmHg, and then gradually increase the temperature At 600°C, copper, indium, and gallium are gradually melted, and then the temperature is raised to 1100°C, smelted for 10 minutes, and cooled with the furnace to obtain a copper-indium-gallium ternary alloy.

[0033] Put 1492 grams of refined copper indium gallium ternary alloy and 1800 grams of selenium powder into the two ends of the quartz tube respectively, vacuumize and seal the quartz tube. Use a tube furnace to slowly heat the quartz tube at one end of the copper indium gallium from room temperature to 900 °C; use a tube furnace to heat the part of the quartz tube with selenium at the other end from room temperature to 300 °C and keep it warm for 10 minutes; 300 ℃ to 500℃ for ...

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PUM

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Abstract

The invention aims to provide a preparation method of a Cu-Im-Ga-Se quaternary semiconductor alloy. The preparation method comprises the concrete steps: placing a quartz crucible with Cu-Im-Ga raw materials in a vacuum induction furnace, vacuumizing, introducing argon, controlling the vacuum degree of the induction furnace at 20-30mmHg, gradually heating to 500-700 DEG C, then, heating to 900-1100 DEG C, melting for 10-30min, and cooling in the furnace to obtain a Cu-Im-Ga ternary alloy; respectively filling the prepared Cu-Im-Ga ternary alloy and Se powder at two ends of a quartz tube, vacuumizing, and sealing the quartz tube; heating the Cu-Im-Ga-Se filling end of the quartz tube to 850-950 DEG C by using a tube furnace; heating the Se powder filling end of the quartz tube to 300-330 DEG C by using the tube furnace, and preserving the temperature for 0-20min; preserving the temperature of 300-500 DEG C for 1-20h; heating from 500 DEG C to 750 DEG C; cooling the Cu-Im-Ga-Se filling end to 750 DEG C when the temperature at the Se powder filling end is up to 750 DEG C, and reacting Im with Se at the temperature of 750 DEG C for 5-60h; and shutting off the tube furnace to stop heating, and cooling to the room temperature to obtain a solid Cu-Im-Ga-Se sample.

Description

technical field [0001] The invention belongs to the field of alloys, and particularly provides a copper indium gallium selenium quaternary semiconductor alloy and a preparation method thereof. Background technique [0002] With the rapid development of society and economy, people's demand for energy is increasing day by day, and people have paid great attention to renewable energy such as solar energy, wind energy, water energy, and biomass energy. As a representative of renewable energy, solar energy has received extensive attention. Solar cells have been extensively studied in recent years as a tool for converting light energy into electricity. At present, the photoelectric conversion efficiency of small-area silicon-based solar cells is 25%, and the photoelectric conversion efficiency of large-area silicon-based solar cells can reach 10%, which has been commercialized; however, silicon solar cells also have big problems, mainly It is the efficiency attenuation and the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/10C22C30/02H01L31/18
CPCY02P70/50
Inventor 崔勇熊良银葛鹏李明群王雪松刘实
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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