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A kind of preparation method of iron-doped zinc selenide laser crystal

A technology of laser crystals and zinc selenide, which is applied in chemical instruments and methods, crystal growth, diffusion/doping, etc., can solve the problems of low doping concentration of ferrous ions, increase doping concentration, increase temperature, and suppress Volatile effect

Active Publication Date: 2016-08-31
北京雷生强式科技有限责任公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem of low doping concentration of ferrous ions in the prior art, an embodiment of the present invention provides a method for preparing an iron-doped zinc selenide laser crystal

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  • A kind of preparation method of iron-doped zinc selenide laser crystal
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  • A kind of preparation method of iron-doped zinc selenide laser crystal

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Embodiment 1

[0033] as attached figure 1 As shown, the embodiment of the present invention provides a method for preparing iron-doped zinc selenide laser crystals: under inert atmosphere conditions, dopant 1 containing ferrous ions (preferably ferrous selenide powder, ferrous sulfide At least one of the powders, the particle size of the powder is 30 mesh-40 mesh) is placed in the high temperature zone of the reactor, the zinc selenide crystal 2 is placed in the low temperature zone of the reactor, and the ferrous ions enter the place by thermal diffusion In the zinc selenide mentioned above, the first iron-doped zinc selenide laser crystal is prepared. Further, the prepared first iron-doped zinc selenide laser crystal is cut (for example, cut from the middle into 2 equal parts), and the two iron-doped zinc selenide laser crystals of the cut first iron-doped zinc selenide laser crystal Thermal bonding between the surfaces (the specific operation of the thermal bonding is: perform optical p...

Embodiment 2

[0042] The embodiment of the present invention provides a method for preparing an iron-doped zinc selenide laser crystal. The specific operation is as follows: select ferrous selenide powder with a purity of 99.998% as a diffusion dopant, and use a zinc selenide wafer (for example, CVD The ZnSe polycrystalline wafer prepared by the method) is used as the base material. Under an inert atmosphere (argon, pressure 0.05atm), put the ferrous selenide powder into the high temperature zone of the quartz tube, put the zinc selenide wafer into the low temperature zone of the quartz tube, then seal the quartz tube and put it in a cloth Heating wire in the corundum tube. During the thermal diffusion process, the temperature of the high temperature zone of the quartz tube is controlled to rise to 1100°C at a rate of 50-150°C / h, and the temperature of the low-temperature zone of the quartz tube is raised to 900°C at a rate of 50-150°C / h. The thermal diffusion constant temperature time is ...

Embodiment 3

[0046] The embodiment of the present invention provides a method for preparing an iron-doped zinc selenide laser crystal, the specific operation is as follows:

[0047] The ferrous sulfide powder with a purity of 99.998% is selected as the diffusion dopant, and the zinc selenide wafer is used as the base material. Under an inert atmosphere (argon, pressure 0.5atm), put the ferrous sulfide powder into the high-temperature zone of the quartz tube, put the zinc selenide wafer into the low-temperature zone of the quartz tube, then seal the quartz tube and put it into a heating cloth silk corundum tube. During the thermal diffusion process, the temperature of the high temperature zone of the quartz tube is controlled to rise to 1200°C at a rate of 50-150°C / h, and the temperature of the low-temperature zone of the quartz tube is raised to a temperature of 1000°C at a rate of 50-150°C / h. The thermal diffusion constant temperature time is 12 days, and the thermal diffusion temperatur...

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Abstract

The invention discloses a preparation method of iron-doped zinc selenide laser crystal, and belongs to the technical field of laser crystal material preparation. The method includes: placing dopant powder containing ferrous ions and zinc selenide crystals in a high temperature zone and a low temperature zone of a reactor under an inert atmosphere, preparing iron-doped zinc selenide crystals by thermal diffusion, and further Ground, the prepared iron-doped zinc selenide crystal is cut, and after thermal bonding is performed between the iron-doped surfaces of the cut iron-doped zinc selenide crystal, thermal diffusion is performed again. The use of the inert atmosphere in the embodiment of the present invention can suppress the volatilization of ZnSe crystals in the low temperature region, thereby significantly increasing the temperature in the low temperature region, and can also be used as a carrier for the thermal diffusion of ferrous ions, thereby increasing the doping concentration of ferrous ions; The iron-doped zinc selenide crystal, and the iron-doped zinc selenide crystal is thermally bonded between the iron-doped surfaces and then subjected to secondary thermal diffusion to further increase the doping concentration of ferrous ions, which is more conducive to the ferrous iron in the iron-doped zinc selenide crystal. Uniform distribution of ions.

Description

technical field [0001] The invention relates to the technical field of laser crystal preparation, in particular to a method for preparing an iron-doped zinc selenide laser crystal. Background technique [0002] Iron-doped zinc selenide (Fe 2+ :ZnSe) is an infrared laser crystal material that can be directly pumped to generate mid-infrared (3-5μm) laser output. As a laser gain medium material, it has a low maximum phonon energy (about 250cm-1) and a long fluorescence lifetime ( 0.3-100μS), wide tuning band (3.9-5.1μm) and other advantages, it has good application prospects in the fields of directional infrared laser interference, infrared ranging, infrared medical treatment, infrared spectroscopy, industrial detection, environmental monitoring and so on. [0003] At present, the thermal diffusion doping method is often used to prepare iron-doped zinc selenide crystals, specifically: under vacuum conditions (pressure ≤ 0.001Pa), ferrous selenide is placed in the high temperat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B31/08
Inventor 夏士兴莫小刚庞才印李兴旺张月娟朱建慧
Owner 北京雷生强式科技有限责任公司