A kind of preparation method of iron-doped zinc selenide laser crystal
A technology of laser crystals and zinc selenide, which is applied in chemical instruments and methods, crystal growth, diffusion/doping, etc., can solve the problems of low doping concentration of ferrous ions, increase doping concentration, increase temperature, and suppress Volatile effect
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Embodiment 1
[0033] as attached figure 1 As shown, the embodiment of the present invention provides a method for preparing iron-doped zinc selenide laser crystals: under inert atmosphere conditions, dopant 1 containing ferrous ions (preferably ferrous selenide powder, ferrous sulfide At least one of the powders, the particle size of the powder is 30 mesh-40 mesh) is placed in the high temperature zone of the reactor, the zinc selenide crystal 2 is placed in the low temperature zone of the reactor, and the ferrous ions enter the place by thermal diffusion In the zinc selenide mentioned above, the first iron-doped zinc selenide laser crystal is prepared. Further, the prepared first iron-doped zinc selenide laser crystal is cut (for example, cut from the middle into 2 equal parts), and the two iron-doped zinc selenide laser crystals of the cut first iron-doped zinc selenide laser crystal Thermal bonding between the surfaces (the specific operation of the thermal bonding is: perform optical p...
Embodiment 2
[0042] The embodiment of the present invention provides a method for preparing an iron-doped zinc selenide laser crystal. The specific operation is as follows: select ferrous selenide powder with a purity of 99.998% as a diffusion dopant, and use a zinc selenide wafer (for example, CVD The ZnSe polycrystalline wafer prepared by the method) is used as the base material. Under an inert atmosphere (argon, pressure 0.05atm), put the ferrous selenide powder into the high temperature zone of the quartz tube, put the zinc selenide wafer into the low temperature zone of the quartz tube, then seal the quartz tube and put it in a cloth Heating wire in the corundum tube. During the thermal diffusion process, the temperature of the high temperature zone of the quartz tube is controlled to rise to 1100°C at a rate of 50-150°C / h, and the temperature of the low-temperature zone of the quartz tube is raised to 900°C at a rate of 50-150°C / h. The thermal diffusion constant temperature time is ...
Embodiment 3
[0046] The embodiment of the present invention provides a method for preparing an iron-doped zinc selenide laser crystal, the specific operation is as follows:
[0047] The ferrous sulfide powder with a purity of 99.998% is selected as the diffusion dopant, and the zinc selenide wafer is used as the base material. Under an inert atmosphere (argon, pressure 0.5atm), put the ferrous sulfide powder into the high-temperature zone of the quartz tube, put the zinc selenide wafer into the low-temperature zone of the quartz tube, then seal the quartz tube and put it into a heating cloth silk corundum tube. During the thermal diffusion process, the temperature of the high temperature zone of the quartz tube is controlled to rise to 1200°C at a rate of 50-150°C / h, and the temperature of the low-temperature zone of the quartz tube is raised to a temperature of 1000°C at a rate of 50-150°C / h. The thermal diffusion constant temperature time is 12 days, and the thermal diffusion temperatur...
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