Cutting-up method for plate capacitor
A technology of flat capacitors and slits, which is applied in the manufacture of circuits, electrical components, semiconductors/solid devices, etc., can solve the problems of easy formation of recast layers on capacitor slits, influence of electrode physical properties, and poor quality of slits, etc., to reduce burrs and film Effect of delamination phenomenon, controllability increase, and requirement reduction
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[0041] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:
[0042] to combine Figures 1 to 18 As shown, a method for slicing flat plate capacitors includes the following steps:
[0043] a. Prepare the dielectric layer 1, and punch the first positioning hole 7 on the dielectric layer by laser drilling or other methods for double-sided etching, such as figure 1 and figure 2 As shown, the number of first positioning holes is at least two;
[0044] b. Form an electroplating seed layer 2 on the upper and lower surfaces of the dielectric layer 1 by sputtering, evaporation or chemical vapor deposition. The thickness of the electroplating seed layer is generally 50-300nm, such as image 3 and Figure 4 As shown, however, the structure of the electroplating seed layer is not limited, it can be a single layer or multiple layers, and the material of the electroplating seed layer is not limited;
[0045] c. T...
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Abstract
Description
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