Laser diode with p type substrate

Abstract

The invention discloses a laser diode with a p type substrate. The laser diode with the p type substrate comprises the p-GaN substrate, wherein a p electrode is arranged at the bottom of the p-GaN substrate, and a p type interface layer, a luminous layer, an n type interface layer, an n type injection layer and an n electrode are arranged on the p-GaN substrate in sequence.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a p-type substrate laser diode. Background technique [0002] Zinc oxide (ZnO) is a new type II-VI direct bandgap wide bandgap semiconductor material. Zinc oxide (ZnO) is similar to GaN in terms of lattice structure, unit cell parameters and bandgap width, and has a higher melting point and greater exciton binding energy than GaN, and has lower photoluminescence and stimulated emission threshold as well as good electromechanical coupling properties, thermal and chemical stability. At room temperature, the band gap of zinc oxide (ZnO) is 3.37eV, and the free exciton binding energy is as high as 60meV, which is much larger than that of GaN, so it is easier to achieve exciton gain at room temperature or higher. However, GaN as a substrate generally includes various defects, such as dislocations, gaps or vacancies, etc. The defects will cause crystal strain, and the strain w...

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Problems solved by technology

However, GaN as a substrate generally includes various defects, such as dislocations, gaps or vacancies, etc. The defects will cause crystal strain, and the strain will reduce the quality and performance of the epitaxial layer on the substrate, resulting in a shortened life of the laser diode.

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