Laser diode with p type substrate
A laser diode, p-type technology, used in lasers, laser parts, semiconductor lasers, etc., can solve the problems of shortened laser diode life, reduced quality and performance of epitaxial layers on substrates, crystal strain, etc., to reduce defect density, The effect of improving the recombination probability and improving the luminous efficiency
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[0015] See figure 1 , The laser diode of the present invention includes a p-GaN substrate 2, wherein a p-electrode 1 is provided under the p-GaN substrate 2; a p-type interface layer 3, a light-emitting layer 4, and an n-type interface layer 3, a light-emitting layer 4, and an n-type interface layer 3 are sequentially arranged on the p-GaN substrate 2. Interface layer 5, n-type injection layer 6, n electrode 7;
[0016] Among them, the p-type interface layer 3 is p-Al x In y Ga 1-x-y P, where 0
[0017] Among them, the light-emitting layer 4 is a multiple quantum well layer with a superlattice structure, and the material of the multiple quantum well layer is ZnO / Zn 1-a Mg a O / Zn 1-b As b O, where 01-a Mg a O / Zn 1-b As b O constitute. The structure of the light-emitting layer is specifically: the ZnO layer sequentially has Zn 1-a Mg a O layer and Zn 1-b As b The O layer, these three layers form a sandwich structure, a...
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