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Optical switch

A technology of optical switch and silicon photonics, which is applied in the field of optical switch, can solve problems such as limited preparation process and power change, and achieve the effect of reducing insertion loss and enhancing stability

Active Publication Date: 2014-02-26
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In recent years, research on optical power regulation based on photonic crystal waveguides has progressed rapidly. For example, by introducing a Mach-Zehnder interferometer-type double-arm structure into a photonic crystal waveguide, an optical modulator with a length of only 50 microns can be realized. Limited to the preparation process, its dynamic extinction ratio is 1.2dB, and the change of power is limited

Method used

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Embodiment 1

[0038] Such as figure 1 As shown, this embodiment provides an optical switch, including:

[0039] A silicon substrate 1, used to carry the entire device structure;

[0040] A silicon dioxide substrate 2 covers the silicon substrate 1 and is used to isolate the silicon substrate and the silicon plate;

[0041] A silicon plate 3, located on a silicon dioxide substrate 2, is used to form a two-dimensional silicon photonic crystal waveguide, a multimode interference waveguide, and a continuous waveguide;

[0042] The silicon dioxide isolation layer 4 is located above the silicon plate 3 and filled in the hole of the two-dimensional silicon photonic crystal waveguide, used to isolate the two-dimensional photonic crystal waveguide and the titanium metal electrode 5, and provides optical isolation and electrical insulation;

[0043] The titanium plate electrode 5 is located on the silicon dioxide isolation layer and is used for heating the two-dimensional photonic crystal waveguide...

Embodiment 2

[0058] Such as image 3 As shown, a substrate wafer composed of silicon-silicon dioxide-silicon is selected, the thickness of the silicon dioxide layer is 3 μm, and the thickness of the silicon on the upper part is 220 nm. Such as Figure 4 As shown, a two-dimensional silicon photonic crystal periodic hole structure 7 with a defect width of W0 and a low group refractive index coupling waveguide 10 with a defect width of 1.2W0 are produced on a silicon plate 3 by electron beam exposure and dry etching. Multimode interference waveguide 8 and continuous waveguide 9 . The graph structure of a single photonic crystal waveguide is as Figure 4 shown. A silicon dioxide isolation layer 4 is deposited on the surface by plasma-enhanced chemical vapor deposition, and titanium metal electrodes 5 and aluminum metal electrodes 6 are prepared by photolithography, evaporation and wet stripping in sequence. When the output light field of each optical switch introduced by the continuous wav...

Embodiment 3

[0061] Such as image 3 As shown, a substrate wafer composed of silicon-silicon dioxide-silicon is selected, the thickness of the silicon dioxide layer is 3 μm, and the thickness of the silicon on the upper part is 220 nm. Such as Image 6 As shown, a two-dimensional silicon photonic crystal periodic hole structure 7 and a continuous waveguide 9 with a width of 1.5W0 are fabricated on a silicon plate 3 by electron beam exposure and dry etching. The graph structure of a single photonic crystal waveguide is as Image 6 shown. A silicon dioxide isolation layer 4 is deposited on the surface by plasma-enhanced chemical vapor deposition, and a titanium metal electrode structure 5 and an aluminum metal electrode structure 6 are sequentially prepared by photolithography, evaporation and wet stripping. When the output light field of each optical switch introduced by the continuous waveguide 9 passes through the two-dimensional silicon photonic crystal waveguide 7, due to the micro-b...

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Abstract

The invention discloses an optical switch which comprises a silicon substrate 1, a silicon dioxide substrate 2, a silicon panel 3, a silicon dioxide isolation layer 4, a titanium metal plane electrode 5 and a aluminum metal electrode 6. The silicon substrate 1 is used for bearing the whole structure. The silicon dioxide substrate 2 covers the silicon substrate 1 and is used for isolating the silicon substrate from the silicon panel. The silicon panel 3 is located on the silicon dioxide substrate 2 and used fro forming two-dimensional photonic crystal waveguide, multimode interference wave guide and splicing waveguide. The silicon dioxide isolation layer 4 is located above the silicon panel, filled into the hole of the two-dimensional photonic crystal waveguide, and used for isolating the two-dimensional photonic crystal waveguide from the titanium metal plane electrode 5 and providing optical isolation and electric insulation. The titanium metal plane electrode 5 is located on the silicon dioxide isolation layer and used for heating the two-dimensional photonic crystal waveguide. The aluminum metal electrode 6 is located on a titanium plane to serve as a contact electrode. The array switch function of special wavelength optical signals of optical communication wavebands (with the wavelength of 1-2 micrometers) is achieved by designing the optical crystal waveguide structure, and electrode stability under large regulating power can be enhanced.

Description

technical field [0001] The invention relates to the technical field of micro-nano photonic devices, in particular to an optical switch. Background technique [0002] Optical switches are essential devices for on-chip optical networks. With the continuous improvement of chip integration, the requirements for the number of optical switches integrated on the same chip and the scale of the switch array are constantly increasing. [0003] Traditional silicon-based optical switches are usually constructed from optical waveguides. In recent years, research on optical power regulation based on photonic crystal waveguides has progressed rapidly. For example, by introducing a Mach-Zehnder interferometer-type double-arm structure into a photonic crystal waveguide, an optical modulator with a length of only 50 microns can be realized. Limited to the preparation process, its dynamic extinction ratio is 1.2dB, and the change of power is limited. [0004] In the field of micro-nano opti...

Claims

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Application Information

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IPC IPC(8): G02F1/01G02B6/122
Inventor 崔开宇赵强黄翊东冯雪刘仿张巍
Owner TSINGHUA UNIV