Optical switch
A technology of optical switch and silicon photonics, which is applied in the field of optical switch, can solve problems such as limited preparation process and power change, and achieve the effect of reducing insertion loss and enhancing stability
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Embodiment 1
[0038] Such as figure 1 As shown, this embodiment provides an optical switch, including:
[0039] A silicon substrate 1, used to carry the entire device structure;
[0040] A silicon dioxide substrate 2 covers the silicon substrate 1 and is used to isolate the silicon substrate and the silicon plate;
[0041] A silicon plate 3, located on a silicon dioxide substrate 2, is used to form a two-dimensional silicon photonic crystal waveguide, a multimode interference waveguide, and a continuous waveguide;
[0042] The silicon dioxide isolation layer 4 is located above the silicon plate 3 and filled in the hole of the two-dimensional silicon photonic crystal waveguide, used to isolate the two-dimensional photonic crystal waveguide and the titanium metal electrode 5, and provides optical isolation and electrical insulation;
[0043] The titanium plate electrode 5 is located on the silicon dioxide isolation layer and is used for heating the two-dimensional photonic crystal waveguide...
Embodiment 2
[0058] Such as image 3 As shown, a substrate wafer composed of silicon-silicon dioxide-silicon is selected, the thickness of the silicon dioxide layer is 3 μm, and the thickness of the silicon on the upper part is 220 nm. Such as Figure 4 As shown, a two-dimensional silicon photonic crystal periodic hole structure 7 with a defect width of W0 and a low group refractive index coupling waveguide 10 with a defect width of 1.2W0 are produced on a silicon plate 3 by electron beam exposure and dry etching. Multimode interference waveguide 8 and continuous waveguide 9 . The graph structure of a single photonic crystal waveguide is as Figure 4 shown. A silicon dioxide isolation layer 4 is deposited on the surface by plasma-enhanced chemical vapor deposition, and titanium metal electrodes 5 and aluminum metal electrodes 6 are prepared by photolithography, evaporation and wet stripping in sequence. When the output light field of each optical switch introduced by the continuous wav...
Embodiment 3
[0061] Such as image 3 As shown, a substrate wafer composed of silicon-silicon dioxide-silicon is selected, the thickness of the silicon dioxide layer is 3 μm, and the thickness of the silicon on the upper part is 220 nm. Such as Image 6 As shown, a two-dimensional silicon photonic crystal periodic hole structure 7 and a continuous waveguide 9 with a width of 1.5W0 are fabricated on a silicon plate 3 by electron beam exposure and dry etching. The graph structure of a single photonic crystal waveguide is as Image 6 shown. A silicon dioxide isolation layer 4 is deposited on the surface by plasma-enhanced chemical vapor deposition, and a titanium metal electrode structure 5 and an aluminum metal electrode structure 6 are sequentially prepared by photolithography, evaporation and wet stripping. When the output light field of each optical switch introduced by the continuous waveguide 9 passes through the two-dimensional silicon photonic crystal waveguide 7, due to the micro-b...
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Abstract
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