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Semiconductor processing

A technology of silicon carbide and products, applied in the field of preparation of silicon carbide, can solve the problems of waste, cost, inefficiency, etc., and achieve the effect of reducing pollution and effective manufacturing method

Inactive Publication Date: 2014-03-19
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Every time a new SiC part is debugged, 200-250 wafers are wasted, which is expensive and inefficient for an industry that emphasizes speed, cost and performance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] The CVD silicon carbide susceptor ring was machined to a surface roughness Ra = 0.8 microns using conventional grinding equipment. Surface roughness was measured using a contact profilometer. First machined with a 150 grit diamond wheel and then with a 320 grit diamond wheel. Grind for 9 hours at a rotation speed of 1750 rpm.

[0052] Then use a diamond paste with a particle size of 4-8 microns, using a Pellon Pad TM The lapping pad laps the susceptor ring. Grinding was carried out for 2 hours at a surface speed of 600 m / min.

[0053] Surface roughness was measured using a contact profilometer. The measured Ra value is 0.1 micron and Rz(din) is 1 micron.

[0054] The susceptor ring is then placed in the wafer boat, and the semiconductor wafer is placed in the susceptor ring. The wafer boat is then placed in a conventional CVD furnace. The furnace is heated to 1100°C to generate an inert argon and hydrogen atmosphere to form an epitaxial film. The boat containing...

Embodiment 2

[0056] The CVD silicon carbide susceptor ring was machined to a surface roughness Ra = 0.8 microns using conventional milling equipment and methods as described in Example 1. Surface roughness was measured using a contact profilometer.

[0057] Then use a diamond paste with a particle size of 4-8 microns, using a Pellon Pad TM The polishing pad laps the susceptor ring. Grinding for 2 hours at a surface speed of 1200 m / min. The susceptor was then polished for 3 hours using diamond paste with a particle size of 2-4 microns. Ra is expected to be less than 0.05 microns and Rz(din) to be less than 0.5 microns as measured by a contact profilometer.

[0058] The susceptor ring is then placed in the wafer holder, and the semiconductor wafer is placed in the susceptor ring. The apparatus was then placed in a CVD furnace with an inert argon atmosphere. The furnace was heated from room temperature to 1100°C. The device was heated in a furnace for 10 hours. The oven was then cooled...

Embodiment 3

[0060] The CVD silicon carbide susceptor ring was machined to a surface roughness Ra = 0.8 microns using conventional milling equipment and methods as described in Example 1. Surface roughness was measured using a contact profilometer.

[0061] Then use a diamond paste with a particle size of 0.25-1 microns, using a Pellon Pad TM The polishing pad laps the susceptor ring. Grinding for 3 hours at a surface speed of 1500 m / min. The susceptor was then polished for 4 hours using diamond paste with a particle size of 0.25-1 micron. Ra is expected to be less than 0.005 microns and Rz(din) to be less than 0.05 microns as measured by a contact profilometer.

[0062] The susceptor ring was then placed in a standard hot open air oven at 1100°C for 100 hours to form a 0.4 micron thick silica layer on the surface of the susceptor ring. The temperature was then cooled to room temperature. After the susceptor ring was cooled, it was immersed in 1N hydrofluoric acid solution at 30° C. f...

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Abstract

The invention relates to semiconductor processing and specifically to a method for providing reduced particle generating silicon carbide. The method comprises: a) providing a silicon carbide product; and b) modifying one or more surfaces of the silicon carbide product such that the product generates one or more surfaces with an Ra of less than or equal to 0.5 microns and an Rz(din) of less than or equal to 5 microns and 160 particles / dm2 or less on one or more semiconductor wafers during semiconductor wafer processing. The silicon carbide products may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces contamination on semiconductor wafers, thus increasing their yield

Description

[0001] This application is a divisional case of a Chinese patent application with an application date of December 4, 2006, an application number of 200610166726.8, and an invention title of "Semiconductor Processing". technical field [0002] The present invention relates to semiconductor wafer processing to provide semiconductor wafers with reduced particle contamination. More specifically, the present invention relates to semiconductor wafer processing using silicon carbide with reduced particle generation to provide semiconductor wafers with reduced particle contamination, and methods of making said silicon carbide. Background technique [0003] There are many manufacturing steps involved in the production of semiconductor wafers. One processing step is to use NF in the plasma etch chamber 3 Such as fluorine-based compounds for processing silicon wafers. These compounds are extremely reactive and corrosive. Ceramic materials such as silicon carbide components are used ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/00
CPCC30B33/005C30B29/36C30B35/00C23C16/4404C23C16/4581C30B33/10C30B31/10H01L21/20H01L21/02
Inventor J·S·戈尔拉N·E·布雷斯M·A·皮克林
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC