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ito powder, method for producing same, and method for producing dispersion and ito film

A manufacturing method and powder technology, applied in chemical instruments and methods, tin compounds, inorganic chemistry, etc., can solve the problems of high particle contact resistance, low conductivity, low particle conductivity, etc., achieve high conductivity and reduce resistivity Effect

Active Publication Date: 2017-04-12
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, compared with the physical film-forming method, the conductivity of the particles themselves is low, and the contact resistance between the particles is high, so there is a disadvantage of low conductivity.

Method used

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  • ito powder, method for producing same, and method for producing dispersion and ito film
  • ito powder, method for producing same, and method for producing dispersion and ito film
  • ito powder, method for producing same, and method for producing dispersion and ito film

Examples

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Embodiment

[0043] Next, examples of the present invention will be described in detail together with comparative examples.

[0044]

[0045] [Method for producing surface-modified ITO powder]

[0046] Indium chloride (InCl) with an In metal concentration of 24% by mass 3 ) aqueous solution 230.7g, add tin tetrachloride (SnCl 4) aqueous solution 25.4 g and stirred to prepare a raw material solution. Mix the above raw material solution with 25% by mass of ammonia (NH 3 ) aqueous solution was dropped into 1000ml of pure water heated to 60°C while adjusting the pH. At this time, the reaction temperature was adjusted to 60° C., and the pH of the final reaction solution was adjusted to 5.0. The generated indium tin coprecipitated hydroxide, that is, the coprecipitated hydroxide, was repeatedly subjected to oblique washing with ion-exchanged water. When the resistivity of the supernatant reaches 5000Ω·cm or more, the supernatant of the co-precipitated hydroxide is removed to obtain a slur...

Embodiment 2

[0052] Indium chloride (InCl) with an In metal concentration of 24% by mass 3 ) aqueous solution 237.6g, add tin tetrachloride (SnCl 4 ) aqueous solution (19.1 g) was stirred, and then the entire amount was added to 1000 ml of pure water to obtain a raw material solution. 25% by mass of ammonia (NH 3 ) aqueous solution was dripped into this raw material solution for 60 minutes. At this time, the reaction temperature was adjusted to 80° C., and the pH of the final reaction solution was adjusted to 8.0. The generated indium tin coprecipitated hydroxide, that is, the coprecipitated hydroxide, was repeatedly subjected to oblique washing with ion-exchanged water. When the resistivity of the supernatant reaches 5000Ω·cm or more, the supernatant of the co-precipitated hydroxide is removed to obtain a slurry with high viscosity dispersed with indium tin hydroxide particles. An aqueous solution in which 4.5 g of palmityldimethylethylammonium ethosulfate (70% by mass) was dissolved ...

Embodiment 3

[0055] Indium chloride (InCl) with an In metal concentration of 24% by mass 3 ) aqueous solution 244.5g, add tin tetrachloride (SnCl 4 ) aqueous solution 12.7 g and stirred to prepare a raw material solution. Mix the above raw material solution with 25% by mass of ammonia (NH 3 ) aqueous solution was dropped into 1000ml of pure water heated to 60°C while adjusting the pH. At this time, the reaction temperature was adjusted to 20° C., and the pH of the final reaction solution was adjusted to 7.0. The generated indium tin coprecipitated hydroxide, that is, the coprecipitated hydroxide, was repeatedly subjected to oblique washing with ion-exchanged water. When the resistivity of the supernatant reaches 5000Ω·cm or more, the supernatant of the co-precipitated hydroxide is removed to obtain a slurry with high viscosity dispersed with indium tin hydroxide particles. While stirring the slurry, the slurry was diluted with ethanol so that the concentration of the hydroxide particle...

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Abstract

The present invention provides a kind of ITO power which turns into a compaction under low pressure and shows surface modification of high conductivity as well as the manufacturing method thereof, as well as the manufacturing methods of a kind of dispersion liquid and a membrane. When the compaction comprised by the ITO power of the present invention's surface modification is applied a pressure of 0.196 to 29.42MPa and a volume resistivity of the compaction sets to Y, and a relative density of the compaction sets to X, the relationship between the volume resistivity and the relative density are fitted to Y=Alpha Xn, and Alpha is below 5.0*10-3 and n is above -10.

Description

technical field [0001] The present invention relates to a surface-modified ITO powder exhibiting high electrical conductivity when formed into a compact under low pressure, and a method for producing the same. In this specification, ITO means indium tin oxide (Indium Tin Oxide). Background technique [0002] ITO is In 2 o 3 Doped with tin (Sn) compounds, in a 10 20 ~10 21 cm -3 With high carrier concentration, 1×10 -4 Low resistivity around Ω·cm. An ITO film made of this ITO has high transparency in the visible light region (for example, refer to Patent Document 1). Therefore, ITO films are widely used in fields requiring excellent optical properties, such as transparent electrodes of liquid crystal displays (for example, refer to Patent Document 2) and heat ray shielding materials having a high heat ray shielding effect (for example, see Patent Document 3). As a film-forming method of the ITO film, a film-forming method based on simple coating is being studied inste...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/00
Inventor 米泽岳洋山崎和彦竹之下爱
Owner MITSUBISHI MATERIALS CORP