ZnO-based film and preparation method thereof

Abstract

The invention discloses a ZnO-based film. A ZnO-based nanosheet is embedded into the ZnO-based film; the chemical formulas of the ZnO-based film and the ZnO-based nanosheet are Zn[1-x]MxO, M is Al, Ga, In, B, Cd or Mg; x is smaller than 0.20 and greater than or equal to 0; the diameter of the nanosheet is 1-5 microns. The preparation method comprises the following steps: weighing pure ZnO powder and pure M oxide powder according the metering ratio of the chemical formulas Zn[1-x]MxO, preparing a ZnO-based ceramic target; depositing a ZnO-based film on a substrate by using a magnetron sputtering method, and then putting into a corrosive agent to corrode; forming a ZnO:Al nanosheet on the surface of the ZnO:Al film by corrosive liquid after corroding along the crystal boundary in an orientation manner. The ZnO-based nanosheet has large specific surface area, so that the ZnO-based film has a good response on light, a gas, an organic matter and the like. The ZnO-based film is simple in preparation technology, good in repeatability, easy to operate and low in cost.

Description

technical field [0001] The invention relates to a ZnO-based thin film and a preparation method thereof. Background technique [0002] At present, ZnO-based materials have been widely used in catalysis, gas sensors, ultraviolet detectors, light-emitting diodes, field effect transistors, thin-film transistors, touch screens, solar cells and other fields. Doping of ZnO-based materials can greatly enhance its applications. For example, doping elements such as Al, In, Ga, B, and F in ZnO thin film materials can prepare n-type ZnO thin films with good conductivity, while doping Li, Na, K, N, P and other elements can prepare p-type ZnO thin films. And doping Co, Cu, Ni and other elements can prepare dilute magnetic semiconductors. These different degrees of doping directly determine the application of ZnO-based materials in a certain field. [0003] The preparation methods of ZnO-based nanomaterials are generally biased towards chemical synthesis, including water bath, chemical ...

AI Technical Summary

Problems solved by technology

Generally speaking, the maintenance period of these methods is relatively long, or it is difficult to effectively control the morphology of ZnO-based nanomaterials.

For example, the traditional CVD method to prepare ZnO-based nanomaterials has poor repeatability, and it is difficult to dope other atoms to improve the properties of ZnO nanomaterials.

For example, the hydrothermal preparation of Al-doped ZnO nanorods is difficult to achieve effective doping at low temperature (< 200 °C), resulting in low electron mobility, which limits the application of ZnO:Al nanorods in devices.

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