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ZnO-based film and preparation method thereof

A thin film, zn1-xmxo technology, applied in the field of ZnO-based thin film and its preparation, can solve the problems of difficult to effectively control the morphology of ZnO-based nanomaterials, poor repeatability of ZnO-based nanomaterials, low electron mobility, etc., and achieve good response , easy operation, large specific surface area effect

Inactive Publication Date: 2014-04-09
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Generally speaking, the maintenance period of these methods is relatively long, or it is difficult to effectively control the morphology of ZnO-based nanomaterials.
For example, the traditional CVD method to prepare ZnO-based nanomaterials has poor repeatability, and it is difficult to dope other atoms to improve the properties of ZnO nanomaterials.
For example, the hydrothermal preparation of Al-doped ZnO nanorods is difficult to achieve effective doping at low temperature (< 200 °C), resulting in low electron mobility, which limits the application of ZnO:Al nanorods in devices.

Method used

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  • ZnO-based film and preparation method thereof
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  • ZnO-based film and preparation method thereof

Examples

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example 1

[0023] Example 1: Preparation of ZnO:Al film embedded with ZnO:Al nanosheets.

[0024] 1) ZnO, Al with a purity of 99.99% 2 o 3 Powder as raw material, according to Zn 0.96 Al 0.04 O stoichiometric ratio Zn:Al = 0.96:0.04 ratio, respectively weigh 30.00 g of ZnO powder, Al 2 o 3 Powder 0.7831 g. Pour the weighed powder into a ball mill jar equipped with agate balls and ethanol, and mill it on a ball mill for 72 hours to make the powder fine and evenly mixed. Then separate the raw material and dry it at 80°C for 24 hours, add a binder and grind it, and press it into a disc shape with a diameter of about 2 inches and a thickness of 3 mm. Put the shaped green body into a sintering furnace and sinter at 1200 °C for 12 hours to obtain the desired ceramic target.

[0025] 2) Using the magnetron sputtering method, using the ceramic target in step 1) as the target, deposit a layer of ZnO:Al thin film on the cleaned glass substrate, the deposition conditions are: the distance ...

example 2

[0029] Example 2: Preparation of ZnO:In thin films embedded with ZnO:In nanosheets.

[0030] 2) ZnO with a purity of 99.99%, In 2 o 3 Powder as raw material, according to Zn 0.98 In 0.02 O stoichiometric ratio Zn:In = 0.98:0.02 ratio, weigh 30.00 g of ZnO powder, In 2 o 3 Powder 1.0444g. Pour the weighed powder into a ball mill jar equipped with agate balls and ethanol, and mill it on a ball mill for 72 hours to make the powder fine and evenly mixed. Then separate the raw material and dry it at 80°C for 24 hours, add a binder and grind it, and press it into a disc shape with a diameter of about 2 inches and a thickness of 3 mm. Put the shaped green body into a sintering furnace and sinter at 1250°C for 12 hours to obtain the desired ceramic target.

[0031] 2) Using the magnetron sputtering method, using the ceramic target in step 1) as the target, deposit a layer of Zn on the cleaned glass substrate 0.98 In 0.02 O thin film, the deposition conditions are: the dis...

example 3

[0033] Example 3: Preparation of a ZnMgO thin film embedded with ZnMgO nanosheets.

[0034] 1) Using ZnO and MgO powders with a purity of 99.99% as raw materials, according to Zn 0.90 Mg 0.10O stoichiometric ratio Zn:Mg = 0.90:0.10 ratio, weigh 30.00 g of ZnO powder and 1.6509 g of MgO powder respectively. Pour the weighed powder into a ball mill jar equipped with agate balls and ethanol, and mill it on a ball mill for 72 hours to make the powder fine and evenly mixed. Then separate the raw material and dry it at 80°C for 24 hours, add a binder and grind it, and press it into a disc shape with a diameter of about 2 inches and a thickness of 3 mm. Put the shaped green body into a sintering furnace and sinter at 1300°C for 12 hours to obtain the desired ceramic target.

[0035] 2) Using the magnetron sputtering method, using the ceramic target in step 1) as the target, deposit a layer of Zn on the cleaned quartz substrate 0.90 Mg 0.10 O thin film, the deposition condit...

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Abstract

The invention discloses a ZnO-based film. A ZnO-based nanosheet is embedded into the ZnO-based film; the chemical formulas of the ZnO-based film and the ZnO-based nanosheet are Zn[1-x]MxO, M is Al, Ga, In, B, Cd or Mg; x is smaller than 0.20 and greater than or equal to 0; the diameter of the nanosheet is 1-5 microns. The preparation method comprises the following steps: weighing pure ZnO powder and pure M oxide powder according the metering ratio of the chemical formulas Zn[1-x]MxO, preparing a ZnO-based ceramic target; depositing a ZnO-based film on a substrate by using a magnetron sputtering method, and then putting into a corrosive agent to corrode; forming a ZnO:Al nanosheet on the surface of the ZnO:Al film by corrosive liquid after corroding along the crystal boundary in an orientation manner. The ZnO-based nanosheet has large specific surface area, so that the ZnO-based film has a good response on light, a gas, an organic matter and the like. The ZnO-based film is simple in preparation technology, good in repeatability, easy to operate and low in cost.

Description

technical field [0001] The invention relates to a ZnO-based thin film and a preparation method thereof. Background technique [0002] At present, ZnO-based materials have been widely used in catalysis, gas sensors, ultraviolet detectors, light-emitting diodes, field effect transistors, thin-film transistors, touch screens, solar cells and other fields. Doping of ZnO-based materials can greatly enhance its applications. For example, doping elements such as Al, In, Ga, B, and F in ZnO thin film materials can prepare n-type ZnO thin films with good conductivity, while doping Li, Na, K, N, P and other elements can prepare p-type ZnO thin films. And doping Co, Cu, Ni and other elements can prepare dilute magnetic semiconductors. These different degrees of doping directly determine the application of ZnO-based materials in a certain field. [0003] The preparation methods of ZnO-based nanomaterials are generally biased towards chemical synthesis, including water bath, chemical ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
Inventor 吕建国江庆军袁禹亮叶志镇
Owner ZHEJIANG UNIV
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