High-frequency inverter power unit and high-frequency treatment method

Abstract

The invention provides a high-frequency inverter power unit. The high-frequency inverter power unit comprises two bridge arms of the same circuit topology; the two bridge arms are completely symmetrical; each bridge arm comprises a power device which comprises a silicon carbide MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a silicon carbide Schottky diode and a grid resistor and a resistance-capacitance absorbing resistor of the MOSFET; three pins of each silicon carbide MOSFET are G, D and S respectively; two of three pins of each silicon carbide Schottky diode, which are arranged at two ends respectively, are positive poles; the middle pin of the three pins of each silicon carbide Schottky diode is a negative pole; one end of each grid resistor is connected with a driver and the other end of each grid resistor is connected with the G pole of each silicon carbide MOSFET; the negative pole of each silicon carbide Schottky diode is connected with the D pole of each silicon carbide MOSFET; the two positive poles of each silicon carbide Schottky diode is are connected onto a direct current busbar; the S pole of each silicon carbide MOSFET is connected with one end of each resistance-capacitance absorbing resistor and then connected onto an alternating current busbar. According to the high-frequency inverter power unit, the application requirements of the ultrahigh frequency can be met.

Description

technical field [0001] The invention relates to the field of electricity, in particular to a high-frequency inverter power unit and a high-frequency processing method. Background technique [0002] In the prior art, the highest operating frequency of the solid-state high-frequency induction heating power supply is about 800kHz, and the power device adopts a metal oxide semiconductor field effect transistor (MOSFET, Metal Oxide Semiconductor Field Effect Transistor). Due to the constraints of silicon MOSFET characteristics and the limitation of the main circuit structure, it is difficult to continue to increase the operating frequency. Therefore, silicon MOSFETs cannot be used for power devices in high-frequency applications with an operating frequency above 1MHz, and only high-energy consumption, low-safety electronic tubes can be used. frequency power supply. [0003] Therefore, in the existing technology, the solid-state high-frequency induction heating power supply uses ...

AI Technical Summary

Problems solved by technology

[0004] In view of the above technical problems, the present invention provides a high-frequency inverter power unit, which solves the problem that the above-mentioned high-frequency inverter power unit cannot meet the requirements of ultra-high frequency applications.

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