Structure and manufacturing method of aigan/gan HEMT device with source field plate trench gate

Abstract

The invention discloses a groove gate AlGaN / GaN HEMT device structure with a source field plate and a manufacturing method thereof. The problem for obtainment of high frequency high breakdown voltages of an existing AlGaN / GaN HEMT is mainly solved. The structure comprises a substrate, an intrinsic GaN layer, an AlN isolating layer, an intrinsic AlGaN layer, an AlGaN doping layer, a gate electrode, a source electrode, a leakage electrode, the source field plate, an insulating layer, a passivation layer and silicide used for adjusting a channel electric field. The AlGaN doping layer is placed on the intrinsic AlGaN layer, the electrodes and the insulating layer are placed on the AlGaN layer, and the silicide is placed on the insulating layer. A depletion type AlGaN / GaN heterojunction material is grown on the substrate in an epitaxial mode, and the groove gate, the source electrode and the leakage electrode are formed in the structure; afterwards, one insulating layer is deposited, the silicide (NiSi, TiSi2 and the like) is formed on the insulating layer (between a grid leak area and a grid source area), and the silicide on the thick insulating layer is electrically connected with the source electrode to form a source field plate structure; at last, the passivation layer is deposited, so that passivation of the device is realized. The groove gate AlGaN / GaN HEMT device structure has the advantages of being high in device frequency, large in breakdown voltage, high in technological repeatability and controllability, and capable of being used in a depletion type AlGaN / GaN HEMT device with low on-resistance, high working frequency and high voltages.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to the manufacture of semiconductor devices, in particular to an AlGaN / GaN HEMT device structure and manufacturing method based on a depletion-type trench gate structure, which can be used to make depletion-type high-frequency Electron mobility transistors. Background technique [0002] In recent years, the third bandgap semiconductor represented by SiC and GaN has the characteristics of large bandgap, high breakdown electric field, high thermal conductivity, high saturated electron velocity and high concentration of two-dimensional electron gas at the heterojunction interface. It has received widespread attention. In theory, high electron mobility transistor HEMT, light emitting diode LED, laser diode LD and other devices made of these materials have obvious superior characteristics than existing devices, so in recent years, researchers at home and abroad have conducted ext...

AI Technical Summary

Problems solved by technology

AlGaN / GaN heterojunction electron mobility transistors can achieve very high frequencies, but often at the expense of high voltage withstand characteristics

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