Light-emitting diode (LED) structure capable of increasing light emitting efficiency
A technology of LED structure and luminous efficiency, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as uneven distribution, and achieve the effect of improving light output power, distribution uniformity and luminous efficiency
Inactive Publication Date: 2014-05-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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It can solve the problem of uneven distribution of holes in quantum wells in LEDs
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[0010] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0011] figure 1 It is a structural schematic diagram of an LED structure for improving luminous efficiency in the present invention. its like figure 1 As shown, the LED structure includes: sequentially depositing a buffer layer 202, an undoped gallium nitride layer 203, an n-type gallium nitride layer 204, a multiple quantum well 205, and a p-type aluminum gallium nitride layer on a substrate 201 206 , p-type GaN layer 207 , contact layer 208 , electrode 209 on the contact layer 208 , and electrode 210 on the n-type GaN layer 204 .
[0012] figure 2 It is a schematic diagram of the specific structure of the multiple quantum wells of the LED structure in the present invention. Such as figure 2 As shown, in the direc...
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Abstract
The invention discloses a light-emitting diode (LED) structure capable of increasing light emitting efficiency. According to the LED structure, a buffering layer, an undoped gallium nitride layer, an n-type conductive gallium nitride layer, a multiple-quantum well, a p-type aluminum gallium nitride layer, a p-type gallium nitride layer, a contact layer, p electrodes of the buffering layer, the undoped gallium nitride layer, the n-type conductive gallium nitride layer, the multiple-quantum well, the p-type aluminum gallium nitride layer, the p-type gallium nitride layer and the contact layer, and n electrodes of an n-type gallium nitride layer, the buffering layer, the undoped gallium nitride layer, the n-type conductive gallium nitride layer, the multiple-quantum well, the p-type aluminum gallium nitride layer, the p-type gallium nitride layer and the contact layer. The multiple-quantum well is formed by a plurality of quantum wells and quantum barriers alternatively, and the thicknesses of the quantum barriers in the multiple-quantum well in the direction from the n-type layers to the p-type layers gradually decrease. By changing the thicknesses of the quantum barriers in the direction from the n-type layers to the p-type layers, the problem of low light emitting efficiency caused by maldistribution of holes in an LED in the prior art is solved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED structure for improving luminous efficiency. Background technique [0002] White LEDs based on Group III nitrides are developing at an unprecedented speed. White LEDs have the advantages of higher brightness, low energy consumption, long life, fast response, and no radiation. In view of the fact that the current energy shortage has become a restrictive factor for the sustainable development of my country's economy, semiconductor lighting using white LEDs can reduce lighting power consumption by 50%, and at the same time reduce environmental pollution, thus reducing the impact of exhaust gas on global climate change to a certain extent , improve our living environment. High luminous efficiency makes white LEDs a very promising general lighting solution. However, in order to really save energy and reduce lighting costs, it is necessary to further improve the perform...
Claims
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Login to View More IPC IPC(8): H01L33/06
CPCH01L33/06
Inventor 张宁任鹏刘喆李晋闽王军喜
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI