Method for epitaxial growth of II-type GaSb/InGaAs quantum point on InP substrate

Abstract

The invention discloses an II-type GaSb In 0.53 Ga 0.47 As quantum point superlattice material and a growth method. According to the invention, a first layer of the superlattice material is a In 0.53 Ga 0.47 As buffer layer grown on an InP substrate, a second layer is GaSb quantum dot; a third layer is the In 0.53 Ga 0.47 As buffer layer and a fourth layer is GaSb quantum dot; the growth method is characterized in that the buffer layer is grown on the surface of the InP substrate, 4-5ML GaSb quantum point is grown, then the buffer layer is grown, and the 4-5ML GaSb quantum point is finally grown. According to the invention, a MBE technology is employed to obtain the GaSb In 0.53 Ga 0.47 As quantum point grown by a S-K mode on the InP substrate, and the GaSb In 0.53 Ga 0.47 As quantum point has good morphology quality and better optical performance. The method can effectively avoid the As-Sb exchange, and the crystal lattice mismatch degree and Ga atom migration can be obviously reduced.

Description

technical field [0001] The invention belongs to the technical field of growth of low-dimensional nanometer materials, and relates to a quantum dot material and a growth method thereof, in particular to an epitaxial growth of type II GaSb / In on an InP substrate 0.53 Ga 0.47 As quantum dot method. Background technique [0002] Quantum dots (quantum dots, QDs) have nanometer scales in all three dimensions of space. Compared with the de Broglie wavelength of electrons, they have discrete quantized energy spectra and exhibit many unique physical properties. In recent years, it has been paid more and more attention by scientific researchers, and has broad application prospects in nanoelectronics, optoelectronics, life sciences, quantum information and other fields. The increasingly mature molecular beam epitaxy technology has made it possible to prepare high-quality self-assembled quantum dot materials, which has greatly promoted the physical research and device development rela...

AI Technical Summary

Problems solved by technology

However, the binding energy of GaSb and InAs is different, and the mobilities of Ga atoms and In atoms on the surface of (In)GaAs are also different, so their kinetic barriers for self-organized growth in the S-K mode to form quantum dot superlattice materials are also different; And GaSb / InGaAs also has different group V elements, which will cause the growth kinetics of GaSb quantum dot superlattice materials to be different from those of InAs quantum dot superlattice materials; how to effectively control the As- The interdiffusion of Sb reduces the degree of lattice mismatch and ensures the effective growth of quantum dots.

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