Method for epitaxial growth of II-type GaSb/InGaAs quantum point on InP substrate

A growth method and technology of quantum dots, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of different, quantum dot difficulties, different mobility, etc., and achieve the critical transition thickness reduction, good morphology and quality, Enhanced topographic and optical quality effects

Active Publication Date: 2014-05-28
HUAWEI TEHCHNOLOGIES CO LTD
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  • Application Information

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Problems solved by technology

However, the binding energy of GaSb and InAs is different, and the mobilities of Ga atoms and In atoms on the surface of (In)GaAs are also different, so their kinetic barriers for self-organized growth in the S-K mode to form quantum dot superlattice materials are also different; And GaSb / InGaAs also has different group V elements, which will cause the growth kinetics of GaSb quantum dot superlattice materials to be different from those of InAs quantum dot superlattice materials; how to effectively control the As- The interdiffusion of Sb reduces the degree of lattice mismatch and ensures the effective growth of quantum dots.

Method used

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  • Method for epitaxial growth of II-type GaSb/InGaAs quantum point on InP substrate
  • Method for epitaxial growth of II-type GaSb/InGaAs quantum point on InP substrate
  • Method for epitaxial growth of II-type GaSb/InGaAs quantum point on InP substrate

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Embodiment 1

[0045] 1) Remove the surface of the InP substrate from the mold, and clean the surface of the substrate to remove carbon and oxygen, so as to facilitate the growth of In that matches the lattice of the InP substrate. 0.53 Ga 0.47 As buffer layer, the demolding process is carried out under the protection of the As source, the temperature of the substrate thermocouple is 720°C, and the temperature of the As source is 365°C (the temperature of all subsequent As sources is 365°C);

[0046] 2) Growth of superlattice-matched In on the substrate surface 0.53 Ga 0.47 As buffer layer:

[0047] Quickly lower the thermocouple temperature of the substrate to 670°C, open the Ga source and In source shutter, and grow 3000? 0.53 Ga 0.47 The As superlattice-matched buffer layer makes the surface of the InP substrate after demolding smooth and is conducive to the growth of subsequent quantum dots. At this time, the growth temperature of the Ga source is 835°C, the rate is 2350? / h, and the ...

Embodiment 2

[0056] 1) Remove the surface of the InP substrate from the mold, and clean the surface of the substrate to remove carbon and oxygen, so as to facilitate the growth of In that matches the lattice of the InP substrate. 0.53 Ga 0.47 As buffer layer, the demoulding process is carried out under the protection of the As source, the temperature of the thermocouple is 710°C, and the temperature of the As source is 365°C (the temperature of all subsequent As sources is 365°C);

[0057] 2) Growth of superlattice-matched In on the substrate surface 0.53 Ga 0.47 As buffer layer:

[0058] Quickly lower the thermocouple temperature of the substrate to 660°C, open the Ga source and In source shutter, and grow 5000? 0.53 Ga 0.47 The As superlattice-matched buffer layer makes the surface of the InP substrate after demolding smooth and is conducive to the growth of subsequent quantum dots. At this time, the growth temperature of the Ga source is 835°C, the rate is 2350? / h, and the growth ra...

Embodiment 3

[0067] 1) Remove the surface of the InP substrate from the mold, and clean the surface of the substrate to remove carbon and oxygen, so as to facilitate the growth of In that matches the lattice of the InP substrate. 0.53 Ga 0.47As buffer layer, the demoulding process is carried out under the protection of the As source, the temperature of the thermocouple is 715°C, and the temperature of the As source is 365°C (the temperature of all subsequent As sources is 365°C);

[0068] 2) Growth of superlattice-matched In on the substrate surface 0.53 Ga 0.47 As buffer layer:

[0069] Quickly lower the thermocouple temperature of the substrate to 665°C, open the Ga source and In source shutter, and grow 4000? 0.53 Ga 0.47 The As superlattice-matched buffer layer makes the surface of the InP substrate after demoulding flat and is conducive to the growth of subsequent quantum dots. At this time, the growth temperature of the Ga source is 835°C, the rate is 2350? / h, and the growth rate...

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Abstract

The invention discloses an II-type GaSb In 0.53 Ga 0.47 As quantum point superlattice material and a growth method. According to the invention, a first layer of the superlattice material is a In 0.53 Ga 0.47 As buffer layer grown on an InP substrate, a second layer is GaSb quantum dot; a third layer is the In 0.53 Ga 0.47 As buffer layer and a fourth layer is GaSb quantum dot; the growth method is characterized in that the buffer layer is grown on the surface of the InP substrate, 4-5ML GaSb quantum point is grown, then the buffer layer is grown, and the 4-5ML GaSb quantum point is finally grown. According to the invention, a MBE technology is employed to obtain the GaSb In 0.53 Ga 0.47 As quantum point grown by a S-K mode on the InP substrate, and the GaSb In 0.53 Ga 0.47 As quantum point has good morphology quality and better optical performance. The method can effectively avoid the As-Sb exchange, and the crystal lattice mismatch degree and Ga atom migration can be obviously reduced.

Description

technical field [0001] The invention belongs to the technical field of growth of low-dimensional nanometer materials, and relates to a quantum dot material and a growth method thereof, in particular to an epitaxial growth of type II GaSb / In on an InP substrate 0.53 Ga 0.47 As quantum dot method. Background technique [0002] Quantum dots (quantum dots, QDs) have nanometer scales in all three dimensions of space. Compared with the de Broglie wavelength of electrons, they have discrete quantized energy spectra and exhibit many unique physical properties. In recent years, it has been paid more and more attention by scientific researchers, and has broad application prospects in nanoelectronics, optoelectronics, life sciences, quantum information and other fields. The increasingly mature molecular beam epitaxy technology has made it possible to prepare high-quality self-assembled quantum dot materials, which has greatly promoted the physical research and device development rela...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/02C30B29/52B82Y40/00
Inventor 何苗陈虞龙王禄石震武孙庆灵高优
Owner HUAWEI TEHCHNOLOGIES CO LTD
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