Copper alloy wire used for semiconductor devices

A copper alloy and semiconductor technology, applied in the field of copper alloy wires with manganese and/or zinc elements, can solve the problems of material cost reduction, achieve improved physical and chemical properties, high heat softening degree, improved oxidation resistance and corrosion resistance Effect

Inactive Publication Date: 2014-06-11
ADVANCED SEMICON ENG INC
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the present invention provides a copper alloy wire used in semiconductor devices to solve the technical problems existing in the prior art that take into account the improvement of physical and chemical properties and the reduction of material costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Copper alloy wire used for semiconductor devices
  • Copper alloy wire used for semiconductor devices
  • Copper alloy wire used for semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced.

[0021] First, in an embodiment of the present invention, the present invention can provide a copper / manganese alloy wire, which is mainly used in the packaging and bonding process of semiconductor chips, to be electrically connected to an aluminum pad and a carrier of a semiconductor chip. Between the welding pads of the board, wherein the copper / manganese alloy wire of the present embodiment mainly comprises copper (Cu) base material, and the manganese (Mn) element of a specific weight ratio (wt%) is mixed, and above-mentioned specific weight ratio can be 20wt% to 40wt% manganese, with the balance being copper, for example comprising 22wt% to 38wt% manganese, 34wt% to 35wt% manganese, or 34.6wt% manganese. In the copper alloy wire of this embodiment, the manganese element is completely dissolved i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
melting pointaaaaaaaaaa
Login to view more

Abstract

The invention discloses a copper alloy wire used for semiconductor devices. The copper alloy wire comprises, by weight, 20 to 40% of manganese, 20 to 30% of zinc, or 20 to 30% of zinc and manganese, and the balance copper. According to the copper alloy wire, relatively cheap manganese and / or zinc is added into copper base material according to the weight ratio so as to improve copper wire physico-chemical properties relating to wire bonding technology, wire melting point is reduced, wire oxidation resistance and corrosion resistance are improved, wire thermal softening degree at a working temperature is increased, and wire material cost is reduced; and in addition, oxidation resistance of the copper alloy wire is increased, so that reducing protective gas is not necessary in wire bonding processes, using of nitrogen is enough, and accidents are avoided.

Description

technical field [0001] The present invention relates to a copper alloy wire used in semiconductor devices, in particular to a copper alloy wire containing manganese and / or zinc in a specific weight ratio. Background technique [0002] In the existing semiconductor integrated circuit (integrated circuit, IC) chip packaging and manufacturing process, most of the gold wires are used to connect the chip and the carrier board, but compared with the gold wire, the copper wire has the advantage of reducing the material cost. Advantages and better electrical conductivity, thermal conductivity and mechanical strength, so the wire diameter of the copper wire can be designed to be thinner and can provide better heat dissipation efficiency, so there is currently a research and development trend to gradually replace the traditional gold wire with copper wire , and apply it to the wire bonding process of semiconductor chips. [0003] However, during the wire bonding process, the copper w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/05C22C9/04
Inventor 陈银发林光隆赖逸少唐和明
Owner ADVANCED SEMICON ENG INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap