Preparation method of titanium-containing medium and high temperature solar energy absorption coating
A solar energy absorption, medium and high temperature technology, applied in the field of solar energy utilization, can solve the problems of increasing the time of gas switching back and forth, low production stability, complicated preparation process, etc., and achieve the effects of simplifying the production process, saving production time and simplifying the process
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Embodiment 1
[0025] like figure 1 As shown, the titanium-containing medium-high temperature solar energy absorbing coating of the present invention includes four layers of films, which are successively a metal infrared reflective layer, a first absorbing layer, a second absorbing layer and an optical anti-reflection layer from the substrate to the surface, and the titanium-containing solar absorbing layer of the present invention The preparation method of the medium and high temperature solar absorbing coating comprises the following steps:
[0026] S1. Select the substrate, and prepare a layer of aluminum film on the substrate as the metal infrared reflection layer;
[0027] S2. Using pure titanium as the target material, using the mixed gas of argon and nitrogen as the sputtering gas, prepare the first absorption layer on the aluminum film by magnetron sputtering, in which the flow ratio of argon and nitrogen is 5:1, turn on the titanium target power , the sputtering current is 1.25A, t...
Embodiment 2
[0035] The preparation method of the titanium-containing medium-high temperature solar absorbing coating of the present invention comprises the following steps:
[0036] S1. Select the substrate, and prepare a layer of aluminum film on the substrate as the metal infrared reflection layer;
[0037] S2. Using pure titanium as the target material, using the mixed gas of argon and nitrogen as the sputtering gas, prepare the first absorption layer on the aluminum film by magnetron sputtering, in which the flow ratio of argon and nitrogen is 5:1, turn on the titanium target power , the sputtering current is 1.25A, the sputtering voltage is not lower than 450V, and the thickness of the first absorbing layer is 150nm~200nm;
[0038] S3. Keep the target material and sputtering gas type in S2 unchanged, prepare the second absorbing layer on the first absorbing layer, reduce the flow rate of nitrogen gas so that the flow ratio of argon and nitrogen is increased to 13:1, and reduce the sp...
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