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Method for preparing N-Zr-codoped zinc oxide film through atomic layer deposition

A zinc oxide thin film and atomic layer deposition technology, applied in chemical instruments and methods, coatings, gaseous chemical plating, etc., can solve problems such as difficult to achieve precise doping, affecting film thickness and uniformity, and film doping, etc. Achieve the effects of improving stability, promoting the formation, and simple preparation process

Active Publication Date: 2014-06-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

However, MOCVD cannot do in situ doping of thin films and the turbulence and gas flow distribution in the reaction will affect the thickness and uniformity of the film
It is also difficult to achieve accurate doping of specific atomic layer positions by MBE technology

Method used

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  • Method for preparing N-Zr-codoped zinc oxide film through atomic layer deposition

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Embodiment Construction

[0008] see figure 1 As shown, the method for preparing an N-Zr co-doped zinc oxide film by atomic layer deposition provided by the embodiment of the present invention includes: treating a silicon substrate or a glass substrate with concentrated sulfuric acid hydrogen peroxide, and then ultrasonically cleaning with ultrapure water , N 2 Blow dry, wherein concentrated sulfuric acid:hydrogen peroxide=4:1. Put the substrate into the atomic layer deposition chamber, turn on the atomic layer deposition equipment, adjust the working parameters, vacuumize and heat the bottom to achieve various working environments required for the experiment; conduct multiple groups of N-Zr co-doped zinc oxide thin films Composite deposition, namely Zn(C 2 h 5 ) 2 / N 2 / H 2 O / N 2 / plasma N 2 / N 2 / (CH 3 CH 2 O) 4 Zr / N 2 / Zn(C 2 h 5 ) 2 / N 2 / H 2 O / N 2 / plasma N 2 / N 2 =0.15s / 50s / 0.07s / 50s / 10s / 50s / 0.08s / 50s / 0.08s / 50s / 0.07s / 50s / 10s / 50s. Wherein the flow rate of nitrogen is 1sccm-10...

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Abstract

The invention discloses a method for preparing an N-Zr-codoped zinc oxide film through atomic layer deposition (ALD). The method comprises the following steps: putting a substrate in an ALD reaction chamber, heating the substrate and a chamber pipeline, carrying out multi-component composite deposition; the composite deposition comprises the processes of doped deposition introducing a doping element Zr-containing doping source, secondary zinc source deposition, double nitrogen doped source deposition and double oxygen source deposition after primary zinc source deposition in order to form N-Zr-N codoping; and the doping element Zr-containing doping source deposition and the secondary zinc source deposition are sequentially carried out. The method allows the in situ donor-acceptor codoping of the zinc oxide film to be realized in order to increase the doping amount of the acceptor element and promote the p-type conversion of the zinc oxide film.

Description

technical field [0001] The invention relates to the technical field of preparation of zinc oxide thin films, in particular to a method for preparing N-Zr co-doped zinc oxide thin films by atomic layer deposition. Background technique [0002] Semiconductor thin films play a very important role in high-tech industries such as microelectronics, optics, and informatics. Develop high-quality semiconductor thin film preparation and doping technologies, especially for the preparation, characterization, and The study of doping and its characteristics is of great significance to important application fields for new energy, including ultraviolet-band luminescent materials, ultraviolet detectors, highly integrated photonics and electronic devices, and solar cells. Zinc oxide, as a new type II-VI group direct bandgap wide bandgap compound, has a large room temperature bandgap of 3.37eV, and the binding energy of free excitons is as high as 60meV, and it has attracted more and more atte...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/44H01L21/205C30B25/02C30B29/16
Inventor 卢维尔夏洋李超波董亚斌
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI