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Method for growing accessory-grade demantoid single crystal

A single crystal, demantoid garnet technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of high oxidation consumption of rare metal equipment, easy cracking of seed crystals and crystals, insufficient crystal hardness, etc., to reduce power. , the effect of reducing the contact surface, reducing oxidation and consumption

Inactive Publication Date: 2014-06-18
玉溪市明珠晶体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the artificial production of jewelry-grade demantoid single crystals, in the prior art, the seed crystals and crystals are easy to burst, which is easy to cause secondary pollution of raw materials. The generated crystals contain impurities, insufficient crystal hardness, increased scattering, poor optical properties, and poor thermal properties. To solve the problem of high oxidation consumption and high cost of rare metal equipment, a growth method for jewelry-grade demantoid single crystal is provided. The technical solution is as follows:

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] A jewelry-grade demantoid single crystal, comprising the following raw materials in parts by mass: Y with a purity of 5N 2 o 3 2739 parts of powder, AI with a purity of 5N 2 o 3 2061 parts of powder, V with a purity of 4N 2 o 5 20 parts of powder, CrO with a purity of 4N 3 40 parts of powder.

[0055] The growth method of jewelry grade demantoid single crystal comprises the following implementation steps:

[0056] 1. Inspection of raw materials

[0057] Check that the color of the raw material is normal, the surface of the raw material is free from pollution, and select the raw material with normal color, pure and pollution-free as the processing raw material;

[0058] 2. Baking material

[0059] Put the selected processed raw materials into the oven for baking, control the temperature in the oven to 100°C, keep the temperature at this temperature for 5 hours, cut off the power of the oven after the constant temperature is over, and let the processed raw materia...

Embodiment 2

[0096] A jewelry-grade demantoid single crystal, comprising the following raw materials in parts by mass: Y with a purity of 5N 2 o 3 2739 parts of powder, AI with a purity of 5N 2 o 3 2061 parts of powder, V with a purity of 4N 2 o 5 25 parts of powder, CrO with a purity of 4N 3 45 parts of powder.

[0097] The growth method of jewelry grade demantoid single crystal comprises the following implementation steps:

[0098] 1. Inspection of raw materials

[0099] Check that the color of the raw material is normal, the surface of the raw material is free from pollution, and select the raw material with normal color, pure and pollution-free as the processing raw material;

[0100] 2. Baking material

[0101] Put the selected processed raw materials into the oven for baking, control the temperature in the oven to 150°C, keep the temperature at this temperature for 5 hours, cut off the power of the oven after the constant temperature is over, and let the processed raw materia...

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PUM

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Abstract

The invention discloses a method for growing accessory-grade demantoid single crystal. The method comprises the following steps: before raw materials for growing the crystal, including, Y2O3, AI2O3, V2O5 and CrO3 powder materials with specific purity, are allocated, combusting the raw materials to remove the moisture, compressing, baking and feeding the allocated raw materials into a furnace, heating to melt the raw material in an iridium crucible single crystal furnace, preheating seed crystal, seeding, after seeding, necking down, further expanding the should to a required diameter, growing in an equal diameter to 140-160mm, cutting off, when cutting off, firstly, raising the temperature, and subsequently cooling to reduce a solid-liquid contact surface of the crystal to prevent the crystal from explosion, discharging from the furnace, and annealing at high temperature so as to obtain the demantoid single crystal. The method is precise and accurate in material allocation, the equipment, the raw materials, the seed crystal, the growth conditions, the crystal diameter, the temperature and the pressure are specifically controlled, a plurality of measures are taken to prevent the crystal from explosion, the iridium crucible consumption is reduced, and the obtained crystal is wide in hardness, high in melting point, good in optical property, stable in thermal property and wide in permeation wave band.

Description

technical field [0001] The invention belongs to the technical field of artificial gemstones, and in particular relates to a method for growing an ornamental demantoid single crystal. Background technique [0002] Artificial gemstones refer to crystalline materials that are completely or partially artificially produced or manufactured, and have basically the same crystal structure, physical properties and chemical properties as corresponding natural gemstones. [0003] Jewelry-grade demantoid is a kind of artificial gemstone, which has basically the same crystal structure, physical properties and chemical properties as natural garnet. It has good optics, high hardness, excellent quality and strong decoration. It is a high-end jewelry and other accessories. Preferred premium material. [0004] Jewelry grade demantoid belongs to cubic crystal system, single crystal, melting point is 1970 o C. The artificial production of jewelry-grade demantoid has a high growth temperature a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B17/00C30B29/22
Inventor 黄永臣白凤周刘鹏黄楠
Owner 玉溪市明珠晶体材料有限公司