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Multi-metal sulfide semiconductor photocatalytic material and preparation method thereof

A technology of photocatalytic materials and multiple metals, applied in chemical instruments and methods, physical/chemical process catalysts, chemical/physical processes, etc., can solve problems such as difficult promotion and application, long reaction time, etc., and achieve high practical value and low cost , The process is simple and easy to control

Inactive Publication Date: 2014-07-02
PUTIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Now many methods have been developed to prepare multi-component metal sulfide semiconductor nanomaterials, such as solid phase method ( Inorg. Chem., 2004, 4(3): 6473. ), coprecipitation method ( New J. Chem., 2002, 26(9): 1196 ),Hydrothermal ( Nanoscale Res Lett. 2011, 6(1): 290. ), solvothermal method ( J. Am. Chem. Soc., 2006, 128( 22): 7222 ), etc., but these usually require a long reaction time, high temperature, high pressure, and an external template agent, so it is not easy to popularize and apply industrially
Therefore, the preparation of multinary metal sulfide semiconductor nanomaterials with excellent performance through simple methods is still a goal that people are constantly pursuing, and it is very challenging.

Method used

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  • Multi-metal sulfide semiconductor photocatalytic material and preparation method thereof
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  • Multi-metal sulfide semiconductor photocatalytic material and preparation method thereof

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preparation example Construction

[0038] A preparation method of a multi-element metal sulfide semiconductor photocatalytic material, the preparation method is an ultrasonic atomization method, comprising the steps of:

[0039] 1) Dissolving excess thiourea and more than one soluble metal salt in distilled water simultaneously to obtain a transparent reaction precursor;

[0040] 2) The precursor solution is atomized in the reaction bottle under the action of an ultrasonic atomizer to generate an aerosol rich in tiny droplets;

[0041] 3) The aerosol enters the high-temperature tube furnace through the carrier gas, and each aerosol forms a microreactor in the tube furnace. The thiourea decomposes to generate hydrogen sulfide, and the hydrogen sulfide reacts with the metal ions in the soluble metal salt to form a multi-element metal sulfide semiconductor photocatalytic material;

[0042] 4) Driven by a vacuum pump, pump the photocatalytic material obtained in step 3) into a glass bottle filled with distilled wa...

Embodiment 1

[0047] 0.532 g of cadmium acetate (Cd(AC) 2 (H 2 O) 2 ), 1.172 g of indium chloride (InCl 3 (H 2 O) 4 ) and 0.76 g of thiourea (CH 4 N 2 S ) Dissolve in 150 mL of distilled water and stir until completely dissolved to obtain a transparent reaction precursor; the reaction precursor is atomized under the action of an ultrasonic nebulizer to form an aerosol, and the aerosol is carried into the high-temperature tube by the carrier gas (air). Furnace (800 o C) Reaction; the flow rate of the carrier gas is 10 L / min. After the reaction in the tube furnace, the generated photocatalytic material is collected with distilled water, washed and centrifuged, and placed at 75 o C drying to obtain the metal sulfide semiconductor photocatalytic material CdIn 2 S 4 .

[0048]

Embodiment 2

[0050] 0.34 g of silver nitrate (AgNO 3 ), 3.01 g of indium chloride (InCl 3 (H 2 O) 4 ) and 1.60 g of thiourea (CH 4 N 2 S ) Dissolve in 150 mL of distilled water and stir until completely dissolved to obtain a transparent reaction precursor; the reaction precursor is atomized under the action of an ultrasonic nebulizer to form an aerosol, and the aerosol is carried into the high-temperature tube by the carrier gas (air). Furnace (600 o C) Reaction; the flow rate of the carrier gas is 20 L / min. After the reaction in the tube furnace, the generated photocatalytic material is collected with distilled water, washed and centrifuged, and placed at 80 o C is dried to obtain the metal sulfide semiconductor photocatalytic material AgIn 5 S 8 .

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Abstract

The invention discloses a multi-metal sulfide semiconductor photocatalytic material and a preparation method thereof. The preparation method comprises the following steps: dissolving soluble metal salt and sulfourea in distilled water to obtain a reaction precursor solution; atomizing the precursor solution by using an ultrasonic atomizer to generate aerosol which is rich in tiny droplets; driving the aerosol to enter a high-temperature tube furnace, reacting under a carrier gas to generate solid powder; collecting the solid powder by using the distilled water; drying the solid powder at 75 to 85 DEG C after the solid powder is washed and centrifuged to obtain the photocatalytic material. The prepared multi-metal sulfide material has the morphology of mesoporous microspheres, and can response to visible light and show photocatalytic activity; organic matters can be decomposed under the existence of a catalyst by utilizing the visible light; energy resources are saved; the multi-metal sulfide semiconductor photocatalytic material is worth of being popularized; the preparation method has the universality in the aspect of preparing the multi-metal sulfide material; the process is simple and feasible; and therefore, the preparation method is favorable for the large-scale generation and application in industry.

Description

technical field [0001] The invention belongs to the field of material preparation and environmental photocatalysis, and in particular relates to a multi-element metal sulfide semiconductor photocatalysis material and a preparation method thereof. Background technique [0002] Environment and energy are two major issues facing human beings in the 21st century. After nearly 40 years of research on semiconductor photocatalysis, it has fully demonstrated the potential and far-reaching application background of photocatalysis technology in clean energy production and environmental pollution control. . However, traditional photocatalytic materials, such as TiO 2 , ZnO and ZnS are all wide-bandgap photocatalysts, which can only be excited by ultraviolet light, and can only use about 4% of the solar energy. Visible light, which accounts for about 46% of the solar energy, cannot be excited. Therefore, the research and development of photocatalytic materials that respond to visible ...

Claims

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Application Information

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IPC IPC(8): B01J27/04B01J35/10B01J35/08B82Y30/00B82Y40/00
Inventor 黄建辉陈建琴林伟
Owner PUTIAN UNIV
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